Abstract: A system analyzes the temporal progression of individual components within a composite entity. The computing system receives discrete time series of multi-dimensional feature vectors collected from the composite entity. For each component, a distinct subset of features is identified using variability analysis, enabling differentiation between components. Longitudinal changes in these feature subsets are analyzed over the time series to generate component-specific temporal progression profiles. A user interface enables display and exploration of these profiles, supporting visualization of progression trends for selected components of the composite entity.

Abstract: The disclosure provides, inter alia, METTL16 inhibitors and methods of treating cancers that overexpress METTL16.

Abstract: Apparatus, systems and methods for generating separated spin-polarized exciton-polariton quasiparticles are disclosed. Apparatus, systems and methods comprise providing a perovskite optical microcavity, incorporating liquid crystal molecules into the perovskite microcavity, and generating one or more polaritons within the microcavity by optically exciting an intersection point corresponding to a point of generation of the polaritons such that the one or more polaritons separate perpendicular to their respective propagation direction.

Abstract: Aspects of the disclosure provide a semiconductor device. The semiconductor device includes a first stack of layers including a source connection layer and a second stack of layers including gate layers and insulating layers. The gate layers and the insulating layers are stacked alternatively upon the first stack of layers. Further, the semiconductor device includes channel structures that are formed along the first direction in the first stack of layers and the second stack of layers, and a gate line cut structure having a trench that cuts through the first stack of layers and the second stack of layers. The trench is filled with at least an insulating layer. The semiconductor device includes a support structure having a first portion that is disposed at a side of the gate line cut structure and extended from the side of the gate line cut structure and underneath the second stack of layers.

Abstract: A semiconductor device is provided. The semiconductor device includes a stack of word line layers and insulating layers that are stacked alternatingly over a substrate. The semiconductor device also includes a first dielectric trench structure. The first dielectric trench structure is positioned in a bottom select gate (BSG) layer of the word line layers to separate the BSG layer and extends in a first direction of substrate. The semiconductor device further includes a second dielectric trench structure. The second dielectric trench structure is positioned in a top select gate (TSG) layer of the word line layers to separate the TSG layer and extends in the first direction of the substrate. The second dielectric trench structure is offset from the first dielectric trench structure in a second direction of the substrate that is perpendicular to the first direction.

Abstract: A method for forming a 3D memory device is disclosed. A channel structure extending vertically through a dielectric stack including interleaved sacrificial layers and dielectric layers above a substrate is formed. A sacrificial plug above and in contact with the channel structure is formed. A slit opening extending vertically through the dielectric stack is formed. A memory stack including interleaved conductive layers and the dielectric layers is formed by replacing, through the slit opening, the sacrificial layers with the conductive layers. A first contact portion is formed in the slit opening. The sacrificial plug is removed after forming the first contact portion to expose the channel structure. A channel local contact above and in contact with the channel structure, and a second contact portion above the first contact portion in the slit opening are simultaneously formed.

Abstract: Pharmaceutical compositions, kits and methods for treating tumors such as glioma and cancers such as leukemia with (R)-2-hydroxyglutarate (R-2HG) are provided, along with therapeutic regimens including treatment of a patient suffering from glioma or leukemia with a MYC-signaling inhibitor followed by or cotemporaneous with treatment with R-2HG, and optionally other chemotherapeutic agents.

Abstract: An injection system includes an injector device and a base station. The injector device includes a cartridge. The injector device further includes an injector body coupled to the cartridge at a first end of the injector body, the injector body comprising a plug at a second end of the injector body. The base station is configured to couple to the plug, wherein the base station comprises a motor, and wherein rotation of the motor draws medicine from a vial into the cartridge, and wherein a volume of the medicine drawn from the vial into the cartridge is in excess of an set dosage.

Abstract: An injection device includes an injector body. The injection device also includes a cartridge coupled to the injector body and having a first height and comprising an orifice. The injector device also includes a cap coupled to the injector body having a second height and including an outer rim, wherein the outer rim surrounds the cartridge, and wherein the first height is greater than the second height.

Abstract: An injection system includes an injector device and a base station. The injector device includes a cartridge. The injector device additionally includes an injector body coupled to the cartridge at a first end of the injector body, the injector body including a plug at a second end of the injector body. The injector device further includes a spring coupled to the cartridge. The base station is configured to electrically couple to the plug, wherein the base station comprises a motor. Rotation of the motor transmits power to the injector device compressing the spring and drawing medicine from a vial into the cartridge.

Abstract: An immersion liquid supply and recovery device (2) with new-type pumping and drainage cavities includes pumping and drainage openings, pumping and drainage cavities, and sealed pumping and drainage channels, wherein the pumping and drainage cavities are in communication with an immersion flow field by means of the multiple pumping and drainage openings, and the pumping and drainage openings in communication with the different pumping and drainage cavities are circumferentially distributed in a crossed manner; at least two pumping and drainage cavities are provided, and each of the pumping and drainage cavities is in communication with an immersion liquid recovery system by one sealed pumping and drainage channel respectively; and the communication points of the pumping and drainage cavities and the sealed pumping and drainage channels are evenly arranged in the circumferential direction of the pumping and drainage cavities.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a stack of word line layers and insulating layers that are stacked alternatingly over the substrate, and channel structures formed in a first array region and a second array region of the stack. The first array region and the second array region are positioned at opposing sides of the stack. A first staircase is formed in a connection region of the stack over the substrate. The connection region is arranged between the first and second array regions and the first staircase has non-quadrilateral treads. A second staircase is formed in the connection region of the stack over the substrate and the second staircase has non-quadrilateral treads. The connection region in the stack includes a separation region between the first and second staircases.

Abstract: In a method for forming a semiconductor device, a channel structure is formed that extends from a side of a substrate, where the channel structure includes sidewalls and a bottom region. The channel structure further includes a bottom channel contact that is positioned at the bottom region and a channel layer that is formed along the sidewalls and over the bottom channel contact. A high-k layer is formed over the channel layer along the sidewalls of the channel structure and over the bottom channel contact.

Abstract: A fingerprint detection method for a pharmaceutical preparation. The detection method uses an HPLC-DAD wavelength switching method to simultaneously determine a plurality of active ingredients such as mulberroside A, hydroxysafflor yellow pigment A, paeoniflorin, ferulic acid, calycosin-7-O-?-D-glucoside, rosmarinic acid, salvianolic acid B, formononetin, etc. in the pharmaceutical preparation. The sensitivity and accuracy of the detection method are greatly enhanced so as to ensure the comprehensive evaluation of the quality of the pharmaceutical preparation.

Abstract: Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes: a memory stack comprising interleaved conductive layers and dielectric layers; a plurality of channel structures extending vertically through the memory stack; a plurality of channel local contacts each located above and in contact with a corresponding one of the plurality of channel structures, and having a metal material; and a slit structure extending vertically through the memory stack and laterally along a first direction to separate the plurality of channel structures. The slit structure comprises a contact. The contact comprises a first contact portion having a semiconductor material and a second contact portion above the first contact portion and having the metal material. An upper end of the second contact portion and upper ends of the plurality of channel local contacts are coplanar.

Abstract: Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a memory stack, a channel structure, a channel local contact, and a slit structure. The memory stack includes interleaved conductive layers and dielectric layers above the substrate. The channel structure extends vertically through the memory stack. The channel local contact is above and in contact with the channel structure. The slit structure extends vertically through the memory stack. The slit structure includes a contact including a first contact portion and a second contact portion above the first contact portion and having a different material of the first contact portion. An upper end of the second contact portion of the slit structure is flush with an upper end of the channel local contact.

Abstract: The present invention is an immersion liquid supply and recovery device (2) with new-type pumping and drainage cavities.

Abstract: Provided, inter alia, are methods and compositions for treating FTO-mediated cancer.

Abstract: The disclosure provides, inter alia, METTL16 inhibitors and methods of treating cancers that overexpress METTL16.