Abstract: An individual identification system includes an acquiring means and a determining means. The acquiring means is configured to acquire a matched image obtained by shooting part of a predetermined region of a matching target object. The determining means is configured to calculate a score representing a degree to which a partial image similar to the matched image exists in a registration image obtained by shooting a predetermined region of a registration target object, and determine based on the score whether or not the matching target object is identical to the registration target object.

Abstract: An electronic component has an element body; and an external electrode having a main body portion covering at least the second surface and a first wrapping-around portion wrapping around the third surface in the element body. The wrapping-around portion of the external electrode has a first part having a first distance, a second part having a second distance, a third part having a third distance, a fourth part having a fourth distance, and a fifth part having a fifth distance in the second direction in order from one side to the other side in the first direction. The second distance is longer than the first distance and the third distance. The fourth distance is longer than the third distance and the fifth distance.

Abstract: Provided is a liquid skin external composition which allows a poorly water-soluble component to be applied to a skin in a liquid state. An assembly of fiber for use in production of a liquid skin external composition, the assembly of fiber comprising (a) a polymer soluble in water and an alcohol or a ketone in a content of 50 mass % or more and 98 mass % or less with respect to the whole assembly of fiber and (b) a poorly water-soluble component in a content of 2 mass % or more and 40 mass % or less with respect to the whole assembly of fiber.

Abstract: Various embodiments herein relate to methods and apparatus for etching recessed features on a semiconductor substrate. The techniques described herein can be used to form high quality recessed features with a substantially vertical profile, low bowing, low twisting, and highly circular features. These high quality results can be achieved with a high degree of selectivity and a relatively high etch rate. In various embodiments, etching involves exposing the substrate to plasma generated from a processing gas that includes a chlorine source, a carbon source, a hydrogen source, and a fluorine source. The chlorine source may have particular properties. In some cases, particular chlorine sources may be used. Etching typically occurs at low temperatures, for example at about 25C or lower.

Abstract: Provided is a liquid skin external composition which allows a poorly water-soluble component to be applied to a skin in a liquid state. An assembly of fiber for use in production of a liquid skin external composition, the assembly of fiber comprising (a) a polymer soluble in water and an alcohol or a ketone in a content of 50 mass % or more and 98 mass % or less with respect to the whole assembly of fiber and (b) a poorly water-soluble component in a content of 2 mass % or more and 40 mass % or less with respect to the whole assembly of fiber.

Abstract: Methods for producing a composition containing a hardly water-soluble aromatic compound are described which involve Step (1), including Step (1-1) for preparing a material comprising: (A) a hardly water-soluble aromatic compound, (B) a polyol, and (C) an aqueous medium, where a content of the (A) hardly water-soluble aromatic compound in the material for heating is below a saturation solubility of the (A) hardly water-soluble aromatic compound in a solvent having the same composition at 25° C. The obtained solution is then heated in Step (1-2) at normal pressure at a temperature of less than 100° C., to obtain a hardly water-soluble aromatic compound solution 1. Step (2) includes adding water to the hardly water-soluble aromatic compound solution 1 such that the resulting hardly water-soluble aromatic compound solution 2 has a concentration of the (A) hardly water-soluble aromatic compound above a saturation solubility at 25° C.

Abstract: To provide a new method for producing a composition containing a hardly water-soluble aromatic compound, the composition having outstanding hardly water-soluble aromatic compound. A method for producing a composition containing a hardly water-soluble aromatic compound, comprising: Step (1) of obtaining a hardly water-soluble aromatic compound solution Step (1) comprising Step (1-1) of preparing a material for heating comprising (A) a hardly water-soluble aromatic compound, (B) a polyol, and (C) an aqueous medium, and Step (1-2) of obtaining a heated solution containing a hardly water-soluble aromatic compound by heating the material for heating at normal pressure at a temperature of less than 100° C.

Abstract: A method of processing a substrate using a substrate processing apparatus that has an electrostatic chuck including an insulating member inside which an electrode is included and provides a plasma process to a substrate mounted on the electrostatic chuck includes a first process of supplying a heat transfer gas having a second gas pressure to a back surface of the substrate while eliminating electric charges in the substrate using plasma of a process gas having a first gas pressure.

Abstract: The present invention relates to a method for producing an alkali cellulose with suppressed decrease in the degree of polymerization as well as with small use amount of a basic compound, and to a method for producing a cellulose ether by using the alkali cellulose thus obtained. Provided by the present invention are: (A) a method for producing an alkali cellulose, comprising Step 1 wherein a cellulose-containing raw material is pulverized in the presence of 0.6 to 1.

Abstract: A semiconductor device manufacturing method for etching a multilayer film using a mask is provided. The method includes (a) supplying a first gas containing hydrogen, hydrogen bromide, nitrogen trifluoride and at least one of hydrocarbon, fluorocarbon and fluorohydrocarbon into the processing chamber and exciting the first gas to etch the multilayer film from a top surface of the multilayer film to a predetermined position in a stacked direction of the multilayer film; and (b) supplying a second gas that does not substantially contain hydrogen bromide and contains hydrogen and nitrogen trifluoride and at least one of Thydrocarbon, fluorocarbon and fluorohydrocarbon into the processing chamber and exciting the second gas to etch the multilayer film from the predetermined position of the multilayer film to a top surface of the etching stop layer.

Abstract: A semiconductor device manufacturing method for etching a multilayer film using a mask is provided. The method includes (a) supplying a first gas containing hydrogen, hydrogen bromide, nitrogen trifluoride and at least one of hydrocarbon, fluorocarbon and fluorohydrocarbon into the processing chamber and exciting the first gas to etch the multilayer film from a top surface of the multilayer film to a predetermined position in a stacked direction of the multilayer film; and (b) supplying a second gas that does not substantially contain hydrogen bromide and contains hydrogen and nitrogen trifluoride and at least one of Thydrocarbon, fluorocarbon and fluorohydrocarbon into the processing chamber and exciting the second gas to etch the multilayer film from the predetermined position of the multilayer film to a top surface of the etching stop layer.

Abstract: A method of processing a substrate using a substrate processing apparatus that has an electrostatic chuck including an insulating member inside which an electrode is included and provides a plasma process to a substrate mounted on the electrostatic chuck includes a first process of supplying a heat transfer gas having a second gas pressure to a back surface of the substrate while eliminating electric charges in the substrate using plasma of a process gas having a first gas pressure.

Abstract: A device and a method of screening for individual balls are provided. The device for screening for individual balls has a supply device, a slope, and a recovering part jointed to a gas-tight chamber, and has a pressure reducing device for decompressing and maintaining the pressure of the gas-tight chamber lower than 1000 Pa in the gas-tight chamber. The supply device is used for supplying the balls, the slope is used for enabling the balls to roll down, and the recovering part is used for recovering the balls from the slope. Further, the method for screening for individual balls includes supplying the balls from the supply device to the slope, rolling the balls down the slope, screening for the balls according to the speed is difference and/or the direction difference of the balls, and recovering the balls in the recovering part, in the gas-tight chamber with the pressure below 1000 Pa.

Abstract: The present invention relates to a method for producing an alkali cellulose with suppressed decrease in the degree of polymerization as well as with small use amount of a basic compound, and to a method for producing a cellulose ether by using the alkali cellulose thus obtained. Provided by the present invention are: (A) a method for producing an alkali cellulose, comprising Step 1 wherein a cellulose-containing raw material is pulverized in the presence of 0.6 to 1.

Abstract: A device and a method of screening for individual balls are provided. The device for screening for individual balls has a supply device, a slope, and a recovering part jointed to a gas-tight chamber, and has a pressure reducing device for decompressing and maintaining the pressure of the gas-tight chamber lower than 1000 Pa in the gas-tight chamber. The supply device is used for supplying the balls, the slope is used for enabling the balls to roll down, and the recovering part is used for recovering the balls from the slope. Further, the method for screening for individual balls includes supplying the balls from the supply device to the slope, rolling the balls down the slope, screening for the balls according to the speed is difference and/or the direction difference of the balls, and recovering the balls in the recovering part, in the gas-tight chamber with the pressure below 1000 Pa.