Abstract: A gas sensor includes: a substrate; a first conductor and a second conductor that are disposed on the substrate; an insulating layer; and an adsorbent layer. The insulating layer covers the first conductor and the second conductor, and has a first opening that allows a part of a surface of the first conductor to be exposed therethrough and a second opening that allows a part of a surface of the second conductor to be exposed therethrough. The adsorbent layer contains a conductive material and an organic adsorbent that can adsorb a gas. The adsorbent layer is in contact with the first conductor and the second conductor respectively through the first opening and the second opening.

Abstract: A gas sensor includes: a substrate; a first conductor and a second conductor that are disposed on the substrate; an insulating layer; and an adsorbent layer. The insulating layer covers the first conductor and the second conductor, and has a first opening that allows a part of a surface of the first conductor to be exposed therethrough and a second opening that allows a part of a surface of the second conductor to be exposed therethrough. The adsorbent layer contains a conductive material and an organic adsorbent that can adsorb a gas. The adsorbent layer is in contact with the first conductor and the second conductor respectively through the first opening and the second opening.

Abstract: A gas sensor includes: a substrate; a first conductor and a second conductor that are disposed on the substrate; an insulating layer; and an adsorbent layer. The insulating layer covers the first conductor and the second conductor, and has a first opening that allows a part of a surface of the first conductor to be exposed therethrough and a second opening that allows a part of a surface of the second conductor to be exposed therethrough. The adsorbent layer contains a conductive material and an organic adsorbent that can adsorb a gas. The adsorbent layer is in contact with the first conductor and the second conductor respectively through the first opening and the second opening.

Abstract: A gas sensor includes: a substrate; a first conductor and a second conductor that are disposed on the substrate; an insulating layer; and an adsorbent layer. The insulating layer covers the first conductor and the second conductor, and has a first opening that allows a part of a surface of the first conductor to be exposed therethrough and a second opening that allows a part of a surface of the second conductor to be exposed therethrough. The adsorbent layer contains a conductive material and an organic adsorbent that can adsorb a gas. The adsorbent layer is in contact with the first conductor and the second conductor respectively through the first opening and the second opening.

Abstract: A gas sensor includes: a substrate; a first conductor and a second conductor that are disposed on the substrate; an insulating layer; and an adsorbent layer. The insulating layer covers the first conductor and the second conductor, and has a first opening that allows a part of a surface of the first conductor to be exposed therethrough and a second opening that allows a part of a surface of the second conductor to be exposed therethrough. The adsorbent layer contains a conductive material and an organic adsorbent that can adsorb a gas. The adsorbent layer is in contact with the first conductor and the second conductor respectively through the first opening and the second opening.

Abstract: [Object] To provide a method for manufacturing a solar cell element including a semiconductor substrate that includes a high-concentration dopant layer located near the surface of the semiconductor substrate and a low-concentration dopant layer located more inside the semiconductor substrate than the high-concentration dopant layer. [Solving Means] A method includes heating a semiconductor substrate having a first conductivity type in a first atmosphere which contains a dopant having a second conductivity type and which has a first dopant concentration; heating in a second atmosphere the semiconductor substrate heated in the first atmosphere, the second atmosphere having a second dopant concentration less than the first dopant concentration; and heating in a third atmosphere the semiconductor substrate heated in the second atmosphere, the third atmosphere having a third dopant concentration greater than the second dopant concentration.

Abstract: [Object] To provide a method for manufacturing a solar cell element including a semiconductor substrate that includes a high-concentration dopant layer located near the surface of the semiconductor substrate and a low-concentration dopant layer located more inside the semiconductor substrate than the high-concentration dopant layer [Solving Means] A method includes' heating a semiconductor substrate having a first conductivity type in a first atmosphere which contains a dopant having a second conductivity type and which has a first dopant concentration; heating in a second atmosphere the semiconductor substrate heated in the first atmosphere, the second atmosphere having a second dopant concentration less than the first dopant concentration; and heating in a third atmosphere the semiconductor substrate heated in the second atmosphere, the third atmosphere having a third dopant concentration greater than the second dopant concentration.