Patents by Inventor Ruizhe REN

Ruizhe REN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHODS FOR ETCHING A MATERIAL LAYER FOR SEMICONDUCTOR APPLICATIONS
    Publication number: 20220399205
    Abstract: An apparatus and method for etching a material layer with a cyclic etching and deposition process. The method for etching a material layer on a substrate includes: (a) etching at least a portion of a material layer (302) on a substrate (101) in an etch chamber (100) to form an open feature (360) having a bottom surface (312) and sidewalls in the material layer (302); (b) forming a protection layer (314) on the sidewalls and the bottom surface (312) of the open feature (360) from a protection layer (314) gas mixture comprising at least one carbon-fluorine containing gas; (c) selectively removing the protection layer (314) formed on the bottom surface (312) of the open feature (360) from a bottom surface (312) open gas mixture comprising the carbon-fluorine containing gas; and (d) continuingly etching the material layer (302) from the bottom surface (312) of the open feature (360) until a desired depth of the open feature (360) is reached.
    Type: Application
    Filed: December 23, 2019
    Publication date: December 15, 2022
    Inventors: Zhigang WANG, Jiao YANG, Heng WANG, Alfredo GRANADOS, Jon C. FARR, Ruizhe REN
  • Source RF power split inner coil to improve BCD and etch depth performance
    Patent number: 10211030
    Abstract: Embodiments of the present disclosure include a radial frequency plasma source having a split type inner coil assembly. In one embodiment, the split type inner coil assembly comprises two intertwining coils. In another embodiment, the split type inner coil assembly includes looped coils forming a dome.
    Type: Grant
    Filed: June 15, 2015
    Date of Patent: February 19, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Rongping Wang, Ruizhe Ren, Jon C. Farr, Chethan Mangalore, Peter Demonte, Parthiban Balakrishna
  • SOURCE RF POWER SPLIT INNER COIL TO IMPROVE BCD AND ETCH DEPTH PERFORMANCE
    Publication number: 20170200585
    Abstract: Embodiments of the present disclosure include a radial frequency plasma source having a split type inner coil assembly. In one embodiment, the split type inner coil assembly comprises two intertwining coils. In another embodiment, the split type inner coil assembly includes looped coils forming a dome.
    Type: Application
    Filed: June 15, 2015
    Publication date: July 13, 2017
    Applicant: Applied Materials, Inc.
    Inventors: Rongping WANG, Ruizhe REN, Jon C. FARR, Chethan MANGALORE, Peter DEMONTE, Parthiban BALAKRISHNA