Abstract: A temperature control system for fuel cell includes a fuel cell under test, having two end plates, and the end plates having an area. At least two temperature regulating modules, respectively on a surface of one side of the two end plates facing outside of the fuel cell under test, and an area of a heat radiation surface of the temperature regulating module opposite the end plates is greater than or equal to a first preset proportion of the first preset value. At least two temperature detection modules, mounted to the cathode and anode of the fuel cell under test, for obtaining a measured temperature. A control module, connected to the temperature detection module and connected to the temperature regulating module, for controlling of the two temperature regulating modules to regulate the measured temperature of the cathode and anode to tend to a target temperature.

Abstract: The present disclosure provides a performance prediction method and system for a fuel cell in an anode recirculation mode. The method includes: calculating output results of a membrane water transfer equation, a liquid water transfer equation, and a temperature transfer equation based on the membrane water transfer equation, the liquid water transfer equation, and the temperature transfer equation inside the fuel cell; calculating output results of a gas transfer equation based on output results of a first labeling equation according to a phenomenon of nitrogen transmembrane permeation inside the fuel cell; determining gas state parameters in the anode recirculation mode based on the output results of the temperature transfer equation and the gas transfer equation; and predicting output voltage performance of the fuel cell based on the gas state parameters in the anode recirculation mode and output results of a second labeling equation.

Abstract: The present disclosure provides a discretization modeling method for electro-osmotic drag effect of water conservation in a fuel cell, comprising: establishing a conservation equation of membrane water in the fuel cell, performing a discretization for a complete electro-osmotic drag effect, obtaining a discretization simulation model of the complete electro-osmotic drag effect based on results of the discretization, solving the conservation equation of membrane water to establish a discretization simulation model of electro-osmotic drag effect of water conservation in the fuel cell. The discretization modeling method for the electro-osmotic drag effect of water conservation in a fuel cell in the present disclosure can perform a discretization and a numerical calculation for a complete electro-osmotic drag effect, the discretization comprising a water conservation portion caused by a membrane water content gradient and a water conservation portion caused by a proton transport flux gradient.

Abstract: A termination structure of a super-junction power device has a novel polysilicon resistive field plate at the top of a termination region between a transition region and an edge of the device. By utilizing the regular distribution of potential in the field plate, an additional electric field is introduced at the top of the termination structure to limit the expansion of a non-depletion region and optimize the distribution of charges. The termination structure includes a first doping type epitaxial layer, a second doping type compensation region, a second doping type body region, a second doping type lateral connection layer, a second doping type body contact region, a first doping type source contact region, a gate oxide layer, a passivation layer, a field oxide layer, a gate electrode, a second doping type edge contact region, a polysilicon resistive field plate, a metal layer and the like.

Abstract: A method for manufacturing a semiconductor device is provided. A drift region and a compensation region are formed through a deep trench etching and a filling technology. A plurality of modulation doping regions are formed at a top of the drift region by an epitaxy and an ion implantation. A modulation region is introduced, wherein the modulation region flexibly modifies capacitance characteristics and achieve improved dynamic characteristics.

Abstract: A split-gate enhanced power MOS device includes a substrate and an epitaxial layer formed on an upper surface of the substrate. A control gate trench is provided in the epitaxial layer. The control gate trench includes a gate electrode and a split-gate electrode. The gate electrode includes a first gate electrode and a second gate electrode. The first gate electrode and the second gate electrode are located in an upper half portion of the control gate trench and are separated by a first dielectric layer. The first gate electrode and the second gate electrode are located above the split-gate electrode and are separated from the split-gate electrode by a second dielectric layer. The first gate electrode and the second gate electrode are separated from a body region in the epitaxial layer by a gate dielectric.

Abstract: A power semiconductor device including a first conductivity type semiconductor substrate, a drain metal electrode, a first conductivity type semiconductor drift region, and a second conductivity type semiconductor body region. The second conductivity type semiconductor body region includes a first conductivity type semiconductor source region and anti-punch-through structure; the anti-punch-through structure is a second conductivity type semiconductor body contact region or metal structure; the lower surface of the anti-punch-through structure coincides with the upper surface of the first conductivity type semiconductor drift region or the distance between the two is less than 0.5 ?m, so that make the device avoid from punch-through. An anti-punch-through structure is introduced at the source end of the device to avoid punch-through breakdown caused by short channel and light-doped body region.

Abstract: A power semiconductor device including a first conductivity type semiconductor substrate, a drain metal electrode, a first conductivity type semiconductor drift region, and a second conductivity type semiconductor body region. The second conductivity type semiconductor body region includes a first conductivity type semiconductor source region and anti-punch-through structure; the anti-punch-through structure is a second conductivity type semiconductor body contact region or metal structure; the lower surface of the anti-punch-through structure coincides with the upper surface of the first conductivity type semiconductor drift region or the distance between the two is less than 0.5 ?m, so that make the device avoid from punch-through. An anti-punch-through structure is introduced at the source end of the device to avoid punch-through breakdown caused by short channel and light-doped body region.