Patents by Inventor Ruigen Ding

Ruigen Ding has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor structure and method for forming same
    Patent number: 12426246
    Abstract: Semiconductor structure and method forming the same are provided. The method includes: providing a substrate and discrete conductive structures on the substrate; forming an insulating layer on an upper surface of each of the conductive structures; forming an isolation structure on a side wall of each of the conductive structures and on a side wall of each of the insulating layers; removing part of the isolation structure located on the side wall of the insulating layer; removing part of the insulating layer that is far away from a respective one of the conductive structures, to form and surround trenches by a surface of the substrate, the side walls of the isolation structures and the side walls of the insulating layers, a width of an opening of each trench being larger than a width of a bottom of each trench in a direction perpendicular to side walls of the trenches.
    Type: Grant
    Filed: March 3, 2023
    Date of Patent: September 23, 2025
    Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
    Inventors: Gongyi Wu, Ruigen Ding, Xianxian Tang, Nan Deng, Yuchen Wang
  • SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SAME
    Publication number: 20230209806
    Abstract: Semiconductor structure and method forming the same are provided. The method includes: providing a substrate and discrete conductive structures on the substrate; forming an insulating layer on an upper surface of each of the conductive structures; forming an isolation structure on a side wall of each of the conductive structures and on a side wall of each of the insulating layers; removing part of the isolation structure located on the side wall of the insulating layer; removing part of the insulating layer that is far away from a respective one of the conductive structures, to form and surround trenches by a surface of the substrate, the side walls of the isolation structures and the side walls of the insulating layers, a width of an opening of each trench being larger than a width of a bottom of each trench in a direction perpendicular to side walls of the trenches.
    Type: Application
    Filed: March 3, 2023
    Publication date: June 29, 2023
    Inventors: Gongyi WU, Ruigen Ding, Xianxian Tang, Nan Deng, Yuchen Wang