Patents by Inventor RUIJING GE

RUIJING GE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210408372
    Abstract: The present disclosure provides a 2-dimensional (2D) non-volatile switch (2DNS), with a vertical metal-insulator-metal (MIM) structure that includes a semiconducting monolayer crystalline non-metallic atomic sheet sandwiched between a top metal electrode and a bottom metal electrode. The 2DNS is able to perform stable non-volatile resistance switching, including both unipolar and bipolar switching, with a high ON/OFF ratio, low ON resistance, and low operating voltage. The monolayer atomic sheet may include hexagonal boron nitride (h-BN) or a transition metal dichalcogenide (TMD), such as MoS2, MoSe2, WS2, or WSe2. The present disclosure also provides methods for synthesizing a semiconducting monolayer crystalline non-metallic atomic sheet on a target substrate. The monolayer atomic sheet may include h-BN or a TMD, such as MoS2, MoSe2, WS2, or WSe2.
    Type: Application
    Filed: May 25, 2021
    Publication date: December 30, 2021
    Inventors: DEJI AKINWANDE, XIAOHAN WU, RUIJING GE, JACK C. LEE