Abstract: A method for manufacturing a SONOS memory discloses forming first a thin oxide layer as a sidewall protection layer and a blocking layer. This layer prevents the high dielectric-constant layer at the bottom of the stacked gate structure from being exposed on the surface. An lightly doped drain (LDD) implantation area is defined by a lateral thickness of a thin oxide layer, so that the channel width may be controlled by controlling the thickness of the thin oxide layer. Thus, the width of a current channel at the bottom of a gate is reduced under the same ion implantation condition into the active area, thereby improving a current capacity of the SONOS memory without adding any mask or photolithography step, and thus bring no additional patterning costs or active area ion implantation costs.

Abstract: A targeting nanoparticle composition and method of treatment for diseases associated with major basement membrane components of blood vessels accessible from blood stream is presented. The composition includes pegylated perfluorocarbon nanoparticles having a targeting ligand attached that targets the basement membrane components, specifically collagen IV. The targeted nanoparticles may contain at least one pharmaceutically active agent capable of treating a glomerular disease such as lupus nephritis.

Abstract: A targeting nanoparticle composition and method of treatment for diseases associated with major basement membrane components of blood vessels accessible from blood stream is presented. The composition includes pegylated perfluorocarbon nanoparticles having a targeting ligand attached that targets the basement membrane components, specifically collagen IV. The targeted nanoparticles may contain at least one pharmaceutically active agent capable of treating a glomerular disease such as lupus nephritis.

Abstract: A magnetic read apparatus has a media-facing surface (MFS) and includes a read sensor, a magnetic bias structure and an insulating layer. The read sensor has a side, a front occupying part of the MFS and a back. The read sensor includes a free layer, a pinned layer and a barrier layer between the free and pinned layers. The barrier layer has a barrier layer coefficient of thermal expansion. The magnetic bias structure is adjacent to the side of the free layer. The insulating layer includes first and second portions. The first portion of the insulating layer is between the read sensor side and the magnetic bias structure. The second portion of the insulating layer adjoins the read sensor back. The insulating layer has an insulating layer coefficient of thermal expansion that is at least ? of and not more than 5/3 of the barrier layer coefficient of thermal expansion.

Abstract: According to embodiments of the present invention, a magnetoresistive device is provided. The magnetoresistive device includes a free magnetic layer structure having a magnetization orientation that is variable, and a spin orbit coupling structure including a tunnel barrier including a metal oxide, and a metal layer, wherein the tunnel barrier and the metal layer are arranged one over the other, wherein the spin orbit coupling structure is adapted to generate, in response to an applied current, a field to interact with the free magnetic layer structure for switching the magnetization orientation of the free magnetic layer structure. According to further embodiments of the present invention, a method of forming a magnetoresistive device is also provided.