Abstract: Operating a double-sided double-base bipolar junction transistor. One example is a method of operating a switch assembly, the method comprising: blocking current flow from an upper terminal of the switch assembly to a lower terminal by a transistor; and then responsive to assertion of a conduction signal, conducting a first load current from the upper terminal to a lower terminal. The conducting the first load current may be by: closing an upper-main FET coupled between the upper terminal and an upper collector-emitter of the transistor; closing a lower-main FET coupled between a lower collector-emitter of the transistor and the lower terminal; driving a first turn-on current to an upper base of the transistor from an upper current source; and then providing a first steady-state current to the upper base from the upper current source, the first steady-state current lower than the first turn-on current.

Abstract: A hybrid switch circuit for coupling two circuit terminals together is disclosed. The hybrid switch circuit includes a set of bidirectional switch devices coupled between a first circuit terminal and a second circuit terminal. The hybrid switch circuit also includes a set of unidirectional switch devices that are also coupled between the first circuit terminal and the second circuit terminal. In some cases, the set of bidirectional switch devices may be implemented using bidirectional double-base bipolar junction transistors, while the set of unidirectional switch devices may be implemented using wide bandgap transistors. In response to a de-assertion of a switch signal, a control circuit may open the set of bidirectional switch devices and, after a period of time has elapsed, open the set of unidirectional switch devices.

Abstract: Double-sided double-base bipolar junction transistor, and methods of operation. One example is a method comprising conducting main load current from an upper terminal of a switch assembly, through a double-sided double-base bipolar junction transistor (DSDB-BJT) of the switch assembly, and then through a lower terminal of the switch assembly. The conducting may be by: injecting charge carriers into an upper drift region of the DSDB-BJT as the main load current flows into an upper collector-emitter of the DSDB-BJT; and simultaneously injecting charge carriers into a lower drift region of the DSDB-BJT as main load current flows out of a lower collector-emitter of the DSDB-BJT.

Abstract: Thin bidirectional bipolar junction transistor (BJT) devices and methods for fabricating thin bidirectional BJT devices. The method includes forming a first base region and a first emitter/collector region on a first side of a first thick semiconductor wafer. The method also includes removing a portion of the first thick semiconductor wafer to produce a first thin semiconductor wafer. The method further includes forming a second base region and a second emitter/collector region on a second side of the first thin semiconductor wafer opposite the first side. The method also includes producing a second thin semiconductor wafer. The method further includes bonding the first thin semiconductor wafer to the second thin semiconductor wafer.

Abstract: Operating a PNP double-sided double-base bipolar junction transistor (DSDB BJT). One example is a method of operating a DSDB-BJT, the method comprising: conducting a first load current from an upper terminal of the power module to an upper base of the transistor, through the transistor, and from a lower base to a lower terminal of the power module; and then responsive assertion of a first interrupt signal interrupting the first load current from the lower base to the lower terminal by opening a lower-main FET and commutating a first shutoff current through a lower collector-emitter of the transistor to the lower terminal; and blocking current from the upper terminal to the lower terminal by the transistor.

Abstract: Operating a bi-directional double-base bipolar junction transistor (B-TRAN). One example is a method comprising: conducting a first load current from an upper terminal of the power module to an upper-main lead of the transistor, through the transistor, and from a lower-main lead of the transistor to a lower terminal of the power module; and then responsive assertion of a first interrupt signal, interrupting the first load current from the lower-main lead to the lower terminal by opening a lower-main FET and commutating a first shutoff current through a lower-control lead the transistor to the lower terminal; and blocking current from the upper terminal to the lower terminal by the transistor.

Abstract: Operating a bi-directional double-base bipolar junction transistor (B-TRAN). One example is a method comprising: conducting a first load current from an upper terminal of the power module to an upper-main lead of the transistor, through the transistor, and from a lower-main lead of the transistor to a lower terminal of the power module; and then responsive assertion of a first interrupt signal, interrupting the first load current from the lower-main lead to the lower terminal by opening a lower-main FET and commutating a first shutoff current through a lower-control lead the transistor to the lower terminal; and blocking current from the upper terminal to the lower terminal by the transistor.

Abstract: Operating a bi-directional double-base bipolar junction transistor (B-TRAN). One example is a method comprising: conducting a first load current from an upper terminal of the power module to an upper collector-emitter of the transistor, through the transistor, and from a lower collector-emitter to a lower terminal of the power module; and then responsive assertion of a first interrupt signal, interrupting the first load current from the lower collector-emitter to the lower terminal by opening a lower-main FET and thereby commutating a first shutoff current through a lower base of the transistor to the lower terminal; and blocking current from the upper terminal to the lower terminal by the transistor.