Patents by Inventor Ruiyun Huang

Ruiyun Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Treatment for high-temperature cleans
    Patent number: 11699577
    Abstract: Exemplary methods of treating a chamber may include delivering a cleaning precursor to a remote plasma unit. The methods may include forming a plasma of the cleaning precursor. The methods may include delivering plasma effluents of the cleaning precursor to a processing region of a semiconductor processing chamber. The processing region may be defined by one or more chamber components. The one or more chamber components may include an oxide coating. The methods may include halting delivery of the plasma effluents. The methods may include treating the oxide coating with a hydrogen-containing material delivered to the processing region subsequent halting delivery of the plasma effluents.
    Type: Grant
    Filed: May 25, 2021
    Date of Patent: July 11, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Sarah Michelle Bobek, Ruiyun Huang, Abdul Aziz Khaja, Amit Bansal, Dong Hyung Lee, Ganesh Balasubramanian, Tuan Anh Nguyen, Sungwon Ha, Anjana M. Patel, Ratsamee Limdulpaiboon, Karthik Janakiraman, Kwangduk Douglas Lee
  • SEAM REMOVAL IN HIGH ASPECT RATIO GAP-FILL
    Publication number: 20230050255
    Abstract: Exemplary methods of semiconductor processing may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include depositing a silicon-containing material on the substrate. The silicon-containing material may extend within the one or more recessed features along the substrate and a seam or void may be defined by the silicon-containing material within at least one of the one or more recessed features along the substrate. The methods may also include treating the silicon-containing material with a hydrogen-containing gas, such as plasma effluents of the hydrogen-containing gas, which may cause a size of the seam or void to be reduced.
    Type: Application
    Filed: August 13, 2021
    Publication date: February 16, 2023
    Applicant: Applied Materials, Inc.
    Inventors: Qinghua Zhao, Rui Cheng, Ruiyun Huang, Dong Hyung Lee, Aykut Aydin, Karthik Janakiraman
  • TREATMENT FOR HIGH-TEMPERATURE CLEANS
    Publication number: 20220384161
    Abstract: Exemplary methods of treating a chamber may include delivering a cleaning precursor to a remote plasma unit. The methods may include forming a plasma of the cleaning precursor. The methods may include delivering plasma effluents of the cleaning precursor to a processing region of a semiconductor processing chamber. The processing region may be defined by one or more chamber components. The one or more chamber components may include an oxide coating. The methods may include halting delivery of the plasma effluents. The methods may include treating the oxide coating with a hydrogen-containing material delivered to the processing region subsequent halting delivery of the plasma effluents.
    Type: Application
    Filed: May 25, 2021
    Publication date: December 1, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Sarah Michelle Bobek, Ruiyun Huang, Abdul Aziz Khaja, Amit Bansal, Dong Hyung Lee, Ganesh Balasubramanian, Tuan Anh Nguyen, Sungwon Ha, Anjana M. Patel, Ratsamee Limdulpaiboon, Karthik Janakiraman, Kwangduk Douglas Lee