Patents by Inventor Ruizhi ZHANG

Ruizhi ZHANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250044195
    Abstract: The present disclosure provides a sampling device of acquiring a graphite sample from a reactor graphite block, and the sampling device includes: a support placed on the reactor graphite block; a lifter configured to be insertable into the reactor graphite block in a first direction; a sampling actuator arranged at an end of the lifter and configured to acquire a graphite sample from the reactor graphite block. The sampling actuator is configured to insert into the reactor graphite block in a second direction, and the first direction is substantially perpendicular to the second direction.
    Type: Application
    Filed: June 8, 2021
    Publication date: February 6, 2025
    Applicant: China Institute of Atomic Energy
    Inventors: Ruizhi LI, Lijun ZHANG, Xingwang ZHANG, Jie WU
  • Publication number: 20230178347
    Abstract: The present application provides a preparation method of a hydrogenated composite film and an optical filter, and relates to the field of optical film filter technologies. The preparation method includes: introducing inert gas and hydrogen into a reaction chamber, and bombarding at least two materials in the reaction chamber and the introduced hydrogen using plasma formed by the inert gas, such that the at least two materials are sputtered onto a substrate and react with hydrogen ions generated by the hydrogen to form a hydrogenated composite film layer. The hydrogenated composite film layer includes at least two materials which are co-sputtered onto the same substrate using the sputtering technology to obtain a required material performance, so as to obtain the hydrogenated composite film layer with a refractive index greater than 3.5 and an extinction coefficient less than 0.005 under a wavelength of 700 nm to 1800 nm.
    Type: Application
    Filed: July 8, 2021
    Publication date: June 8, 2023
    Applicant: ZHEJIANG CRYSTAL-OPTECH CO., LTD.
    Inventors: Yanzhi WANG, Yonghui WU, Ren LU, Ruizhi ZHANG, Jun YAO, Jinlong CHEN, Lijian JIN, Fenglei LIU, Jian TANG
  • Patent number: 11643716
    Abstract: A preparation method for a high-refractive index hydrogenated silicon film, a high-refractive index hydrogenated silicon film, a light filtering lamination and a light filtering piece. The method includes: (a) by magnetic controlled Si target sputtering, Si deposits on a base body, forming a silicon film, which (b) forms an oxygenic hydrogenated silicon film in environment of active hydrogen and active oxygen, the amount of active oxygen accounts for 4%-99% of the total amount of active hydrogen and active oxygen, or, a nitric hydrogenated silicon film in environment of active hydrogen and active nitrogen, the amount of active nitrogen accounts for 5%-20% of the total amount of active hydrogen and active nitrogen. Sputtering and reactions are separately conducted, Si first deposits on the base body by magnetic controlled Si target sputtering, and then plasmas of active hydrogen and active oxygen/nitrogen react with silicon for oxygenic or nitric SiH.
    Type: Grant
    Filed: January 5, 2018
    Date of Patent: May 9, 2023
    Assignee: ZHEJIANG CRYSTAL-OPTECH CO., LTD.
    Inventors: Ruizhi Zhang, Jian Tang, Ying Wang, Hui Yu, Zhangwu Lu, Zhengchi Xu, Qibin Zhang
  • Publication number: 20190352222
    Abstract: A preparation method for a high-refractive index hydrogenated silicon film, a high-refractive index hydrogenated silicon film, a light filtering lamination and a light filtering piece. The method includes: (a) by magnetic controlled Si target sputtering, Si deposits on a base body, forming a silicon film, which (b) forms an oxygenic hydrogenated silicon film in environment of active hydrogen and active oxygen, the amount of active oxygen accounts for 4%-99% of the total amount of active hydrogen and active oxygen, or, a nitric hydrogenated silicon film in environment of active hydrogen and active nitrogen, the amount of active nitrogen accounts for 5%-20% of the total amount of active hydrogen and active nitrogen. Sputtering and reactions are separately conducted, Si first deposits on the base body by magnetic controlled Si target sputtering, and then plasmas of active hydrogen and active oxygen/nitrogen react with silicon for oxygenic or nitric SiH.
    Type: Application
    Filed: January 5, 2018
    Publication date: November 21, 2019
    Applicant: ZHEJIANG CRYSTAL-OPTECH CO., LTD.
    Inventors: Ruizhi ZHANG, Jian TANG, Ying WANG, Hui YU, Zhangwu LU, Zhengchi XU, Qibin ZHANG