Abstract: A semiconductor device includes a first insulating film formed between a gate electrode and a first flat semiconductor layer, and a sidewall-shaped second insulating film formed to surround an upper sidewall of a first columnar silicon layer while contacting an upper surface of the gate electrode and to surround a sidewall of the gate electrode and the first insulating film. The semiconductor device further includes a metal-semiconductor compound formed on each of an upper surface of a first semiconductor layer of the second conductive type formed in the entirety or the upper portion of the first flat semiconductor layer, and an upper surface of the second semiconductor layer of the second conductive type formed in the upper portion of the first columnar semiconductor layer.

Abstract: A semiconductor device includes a first insulating film formed between a gate electrode and a first flat semiconductor layer, and a sidewall-shaped second insulating film formed to surround an upper sidewall of a first columnar silicon layer while contacting an upper surface of the gate electrode and to surround a sidewall of the gate electrode and the first insulating film. The semiconductor device further includes a metal-semiconductor compound formed on each of an upper surface of a first semiconductor layer of the second conductive type formed in the entirety or the upper portion of the first flat semiconductor layer, and an upper surface of the second semiconductor layer of the second conductive type formed in the upper portion of the first columnar semiconductor layer.

Abstract: A method of manufacturing a semiconductor device includes the steps of forming a first columnar semiconductor layer on a substrate forming a first flat semiconductor layer forming a first semiconductor layer of a second conductive type, and forming a first insulating film. The method further includes the steps of forming a gate insulating film and a gate electrode, forming a second semiconductor layer of the second conductive type, forming a semiconductor layer of a first conductive type and forming a metal-semiconductor compound. The first insulating film has a thickness larger than that of the gate insulating film formed around the first columnar silicon layer.

Abstract: This invention provides a method of manufacturing a semiconductor device, which comprises the steps of: forming a first columnar semiconductor layer on a first flat semiconductor layer; forming a first semiconductor layer of a second conductive type in a lower portion of the first columnar semiconductor layer; forming a first insulating film around a lower sidewall of the first columnar silicon layer; forming a gate insulating film and a gate electrode around the first columnar silicon layer; forming a sidewall-shaped second insulating film to surround an upper sidewall of the first columnar silicon layer; forming a semiconductor layer of a first conductive type between the first semiconductor layer of the second conductive type and a second semiconductor layer of the second conductive type; and forming a metal-semiconductor compound on an upper surface of the first semiconductor layer of the second conductive type.