Abstract: A preparation method for a metal-doped gallium oxide transparent conductive thin film for ultraviolet waveband includes: growing a contact layer thin film (2) on a substrate (1) first, and annealing the grown contact layer thin film (2) in a nitrogen-oxygen atmosphere at 400° C. to 600° C. through a rapid thermal annealing furnace; growing a first Ga2O3 thin film (31) by sputtering through magnetron sputtering under argon conditions; growing a doped thin film (4) by sputtering through magnetron sputtering under argon conditions; growing a second Ga2O3 thin film (32) by sputtering through magnetron sputtering under argon conditions; and annealing the grown thin films in a nitrogen-oxygen atmosphere at 500° C. to 600° C. through a rapid thermal annealing furnace, so that permeation, diffusion and fusion occur between thin film materials to form a metal-doped Ga2O3 thin film (5). A metal-doped gallium oxide transparent conductive thin film for ultraviolet waveband is provided.

Abstract: A preparation method for a metal-doped gallium oxide transparent conductive thin film for ultraviolet waveband includes: growing a contact layer thin film (2) on a substrate (1) first, and annealing the grown contact layer thin film (2) in a nitrogen-oxygen atmosphere at 400° C. to 600° C. through a rapid thermal annealing furnace; growing a first Ga2O3 thin film (31) by sputtering through magnetron sputtering under argon conditions; growing a doped thin film (4) by sputtering through magnetron sputtering under argon conditions; growing a second Ga2O3 thin film (32) by sputtering through magnetron sputtering under argon conditions; and annealing the grown thin films in a nitrogen-oxygen atmosphere at 500° C. to 600° C. through a rapid thermal annealing furnace, so that permeation, diffusion and fusion occur between thin film materials to form a metal-doped Ga2O3 thin film (5). A metal-doped gallium oxide transparent conductive thin film for ultraviolet waveband is provided.

Abstract: An efficient wide bandgap GaN-based LED chip based on a surface plasmon effect and a manufacturing method therefor. The efficient wide bandgap GaN-based LED chip is of a flip-chip structure, and comprises, from bottom to top in sequence, a substrate, a buffer layer, an unintentionally doped GaN layer, an n-GaN layer, a quantum well layer, an electron blocking layer, a p-GaN layer, a metallic reflecting mirror layer, a passivation layer, a p-electrode layer, an n-electrode layer; and a position of a bottom surface of the metallic reflecting mirror layer connected to a surface of the p-GaN layer is provided with a micro-nano composite metal structure. A micro metal structure comprises alternating protrusion portions and recess portions; and a nano metal structure is distributed on an interface of the micro metal structure and the p-GaN layer.

Abstract: A broadband efficient GaN-based LED chip based on a surface plasmon effect and a manufacturing method therefor. The broadband efficient GaN-based LED chip is of a flip-chip structure, and comprises, from bottom to top in sequence, a substrate, a buffer layer, an unintentionally doped GaN layer, an n-GaN layer, a quantum well layer, an electron blocking layer, a p-GaN layer, a metallic reflecting mirror layer, a passivation layer, a p-electrode layer, an n-electrode layer; and a position of a bottom surface of the metallic reflecting mirror layer connected to a surface of the p-GaN layer is provided with a micro-nano composite metal structure. A micro metal structure comprises alternating protrusion portions and recess portions; and a nano metal structure is distributed on an interface of the micro metal structure and the p-GaN layer.