Abstract: A chlorinated oligogermane as a pure compound or mixture of compounds which each have at least one direct Ge—Ge bond, substituents of which include chlorine or chlorine and hydrogen and atom ratio for substituent:germanium is at least 2:1 in the composition thereof, wherein a) the mixture has on average a Ge:Cl ratio of 1:1 to 1:3, or the pure compound has a Ge:Cl ratio of 1:2 to 1:2.67, and b) the mixture has an average number of germanium atoms of 2 to 8.

Abstract: A method for removing impurities from silicon includes A) providing metallic silicon having impurities, B) mixing the metallic silicon with at least one halogenated polysilane of Formula SiXn, where X is halogen, which may be partially replaced by hydrogen, and where 1<n<2.5, and C) heating the metallic silicon so that there is at least partly a reaction of the impurities with the at least one halogenated polysilane or with a decomposition product of the at least one halogenated polysilane, wherein C) may take place before, during and/or after B).

Abstract: A method produces hexachlorodisilane. Hexachlorodisilane is obtained by oxidative splitting of the chlorinated polysilane of the empirical formula SiClx (x=0,2-0,8) using chlorine gas. The hexachlorodisilane is selectively obtained with a high yield.

Abstract: A process for preparing hydrogenated polygermane as a pure compound or mixture of compounds, including hydrogenating halogenated polygermane.

Abstract: Kinetically stable halogenated polysilanes include mixture of compounds having respectively at least four silicon atoms bound together, the substituents thereof comprising chlorine, and chlorine and hydrogen, and in the composition thereof, the atomic ratio of substituent to silicon is at least 1:1, wherein a) the kinetically stable halogenated polysilanes have a kinetically high stability in relation to oxidative-splitting by chlorine, and the degree of conversion at temperatures of 120° C. within 10 hours with an excess of chlorine gas at 1013 hPa does not exceed 30 mol %, and b) the kinetically stable halogenated polysilanes have a percentage of branching points in the polysilane molecules of more than 8 mol %.

Abstract: A process for preparing a halogenated polysilane HpSin?pX(2n+2)?p with n=1 to 50; 0?p?2n+1, and X=F, Cl, Br, I, as an individual compound or a mixture of compounds, from a mixture which includes the halogenated polysilane or in which the halogenated polysilane is formed, additionally includes boron-containing impurities, wherein a) the mixture is admixed with at least 1 ppbw (parts per billion per weight) of a siloxane-forming oxidizing agent or siloxane, the boron-containing impurities forming compounds having a volatility and/or solubility different from the halogenated polysilanes, b) the halogenated polysilane is separated from the compound(s), and c) not more than 1 ppmw of water and not less than 1 ppb of siloxanes are present.

Abstract: A method for producing oligosilanes by reacting halogenated oligosilanes with a metal hydride includes a reaction occurring in the presence of a catalyst and an alkali metal halide, the catalyst including a halide of a multivalent metal; and the reaction occurs in an ethereal solution.

Abstract: A chlorinated polysilane has the formula SiClx wherein x=0.01?0.8 and which can be produced by thermolysis of a chloropolysilane at a temperature below 600° C.

Abstract: A process for preparing hydrogenated polygermasilane as a pure compound or mixture of compounds includes hydrogenating halogenated polygermasilane.

Abstract: A method and a device produce short-chain halogenated polysilanes and/or short-chain halogenated polysilanes and halide-containing silicon by thermolytic decomposition of long-chain halogenated polysilanes. The thermolytic decomposition of long-chain halogenated polysilanes diluted with low-molecular halosilanes is carried out under an atmosphere of halosilanes, thereby ensuring the production of such products at industrial scale in a simple and cost-effective manner.

Abstract: Bodies coated with a SiC layer or with a multilayer coating system that include at least a SiC hard material layer, wherein the SiC layer consists of halogen-containing nanocrystalline 3C-SiC or a mixed layer which consists of halogen-containing nanocrystalline 3C-SiC and amorphous SiC or halogen-containing nanocrystalline 3C-SiC and amorphous carbon.

Abstract: The invention is directed to mixtures of polysilanes macroscopically solid at ambient temperature wherein the individual components of the composition SinH2n and/or SinH2n+2 of which decompose before they are boiling at an applied process pressure and which are produced from the hydrogenation of plasmachemically generated largely chlorinated polysilane mixtures. These mixtures of polysilanes are especially suited to be applied onto surfaces as solutions or dispersions and to obtain silicon-based structures or layers in subsequent process steps. Furthermore, they are especially safe in handling and can be additionally made up into transport forms in suitable transport containers.

Abstract: The invention relates to a method for producing halogenated oligomers and/or halogenated polymers of elements of the third to fifth main group, wherein the halogenated oligomers and/or halogenated polymers are synthesized from a first chain-forming agent and a second chain-forming agent in a plasma-chemical reaction. At least one of the two chain-forming agents is a halogen compound of an element of the third to fifth main group.

Abstract: The invention relates to silicon containing halogenide obtained by thermal disintegration of halogenized polysilane, and a method for producing the silicon. The silicon has a halogenide content of 1 at %-50 at %. The invention further relates to the use of the silicon containing halogenide for purifying metallurgical silicon.

Abstract: The present invention relates to a halogenated polysilane as a pure compound or mixture of compounds each having at least one direct Si—Si bond, whose substituents consist exclusively of halogen or of halogen and hydrogen and in whose composition the atomic ratio substituent:silicon is greater than 1:1.

Abstract: The present invention relates to a halogenated polysilane as a pure compound or a mixture of compounds each having at least one direct Si—Si bond, whose substituents consist exclusively of halogen or of halogen and hydrogen and in the composition of which the atomic ratio of substituent to silicon is at least 1:1.

Abstract: The invention relates to a method for the plasma-assisted synthesis of organohalosilanes in which organohalosilanes of the general empirical formula R1mR2oSiX4-p (X=F, Cl3, Br or I; p=1-4; p=m+o; m=1-4; o=0-3; R1, R2=alkyl, alkenyl, alkinyl, aryl) and/or carbosilanes of the general empirical formula R3qSiX3-qCH2SiR4rX3-r (X=F, Cl, Br or I; q=0-3; r=0-3; R3, R4=alkyl, alkenyl, alkinyl, aryl) are formed by activating a plasma in a mixture of one or more volatile organic compounds from the group of alkanes, alkenes, alkines and aromates with SiX4 and/or organohalosilanes RnSiX4-n (X=F, Cl, Br oder I; n=1-4; R=alkyl, alkenyl, alkinyl, aryl).

Abstract: The invention is based on the aim of developing a device and a method for the plasma-enhanced synthesis of halogenated polysilanes and polygermanes, wherein at least one reaction partner is present in a gaseous form and is excited by reactive particles from a plasma zone, and is subsequently reacted by means of at least one further reaction partner which is present in the reaction chamber in vaporous or gaseous form. Reactions of halogen silanes or germanes of the group SiCl4, SiF4, GeCl4, GeF4 with H2 are possible.

Abstract: The invention is directed to mixtures of polysilanes macroscopically solid at ambient temperature wherein the individual components of the composition SinH2n and/or SinH2n+2 of which decompose before they are boiling at an applied process pressure and which are produced from the hydrogenation of plasmachemically generated largely chlorinated polysilane mixtures. These mixtures of polysilanes are especially suited to be applied onto surfaces as solutions or dispersions and to obtain silicon-based structures or layers in subsequent process steps. Furthermore, they are especially safe in handling and can be additionally made up into transport forms in suitable transport containers.

Abstract: The invention relates to a method for the final product-related manufacture of low-molecular, medium-molecular, and high-molecular halogenated polysilanes, the distillation thereof into selected fractions, the direct deposition of silicon from the gas phase or a liquid phase of polysilane mixtures or polysilanes, the hydrogenation or derivation of halogenated polysilanes, and the processing into final products in an adequate system.