Abstract: A film element of an EUV-transmitting wavefront correction device is arranged in a beam path and includes a first layer of first layer material having a first complex refractive index n1=(1??1)+iß1, with a first optical layer thickness, which varies locally over the used region in accordance with a first layer thickness profile, and a second layer of second layer material having a second complex refractive index n2=(1??2)+iß2, with a second optical layer thickness, which varies locally over the used region in accordance with a second layer thickness profile. The first and second layer thickness profiles differ. The deviation ?1 of the real part of the first refractive index from 1 is large relative to the absorption coefficient ß1 of the first layer material and the deviation ?2 of the real part of the second refractive index from 1 is small relative to the absorption coefficient ß2 of the second layer material.

Abstract: A film element of an EUV-transmitting wavefront correction device is arranged in a beam path and includes a first layer of first layer material having a first complex refractive index n1=(1??1)+i?1, with a first optical layer thickness, which varies locally over the used region in accordance with a first layer thickness profile, and a second layer of second layer material having a second complex refractive index n2=(1??2)+i?2, with a second optical layer thickness, which varies locally over the used region in accordance with a second layer thickness profile. The first and second layer thickness profiles differ. The deviation ?1 of the real part of the first refractive index from 1 is large relative to the absorption coefficient ?1 of the first layer material and the deviation ?2 of the real part of the second refractive index from 1 is small relative to the absorption coefficient ?2 of the second layer material.

Abstract: A mirror arrangement for an EUV projection exposure apparatus for microlithography comprises a plurality of mirrors each having a layer which is reflective in the EUV spectral range and to which EUV radiation can be applied, and having a main body. In this case, at least one mirror of the plurality of mirrors has at least one layer comprising a material having a negative coefficient of thermal expansion. Moreover, a method for operating the mirror arrangement and a projection exposure apparatus are described. At least one heat source is arranged, in order to locally apply heat in a targeted manner to the at least one layer having a negative coefficient of thermal expansion of the at least one mirror.

Abstract: A reflective optical element for a microlithographic projection exposure apparatus, a mask inspection apparatus or the like. The reflective optical element has an optically effective surface, an element substrate (12, 32, 42, 52), a reflection layer system (14, 34, 44, 54) and at least one deformation reduction layer (15, 35, 45, 55, 58). When the optically effective surface (11, 31, 41, 51) is irradiated with electromagnetic radiation, a maximum deformation level of the reflection layer system is reduced in comparison with a deformation level of an analogously constructed reflective optical element without the deformation reduction layer.

Abstract: A projection objective of a microlithographic projection apparatus has a wavefront correction device (42) comprising a mirror substrate (44; 44a, 44b) that has two opposite optical surfaces (46, 48), through which projection light passes, and a circumferential rim surface (50) extending between the two optical surfaces (46, 48). A first and a second optical system (OS1, OS2) are configured to direct first and second heating light (HL1, HL2) to different portions of the rim surface (50) such that at least a portion of the first and second heating light enters the mirror substrate (44; 44a, 44b). A temperature distribution caused by a partial absorption of the heating light (HL1, HL2) results in a refractive index distribution inside the mirror substrate (44; 44a, 44b) that corrects a wavefront error.

Abstract: A projection objective of a microlithographic projection apparatus comprises a wavefront correction device (42) comprising a mirror substrate (44; 44a, 44b) that has two opposite optical surfaces (46, 48), through which projection light passes, and a circumferential rim surface (50) extending between the two optical surfaces (46, 48). A first and a second optical system (OS1, OS2) are configured to direct first and second heating light (HL1, HL2) to different portions of the rim surface (50) such that at least a portion of the first and second heating light enters the mirror substrate (44; 44a, 44b). A temperature distribution caused by a partial absorption of the heating light (HL1, HL2) results in a refractive index distribution inside the mirror substrate (44; 44a, 44b) that corrects a wavefront error.

Abstract: A mirror arrangement for an EUV projection exposure apparatus for microlithography comprises a plurality of mirrors each having a layer which is reflective in the EUV spectral range and to which EUV radiation can be applied, and having a main body. In this case, at least one mirror of the plurality of mirrors has at least one layer comprising a material having a negative coefficient of thermal expansion. Moreover, a method for operating the mirror arrangement and a projection exposure apparatus are described. At least one heat source is arranged, in order to locally apply heat in a targeted manner to the at least one layer having a negative coefficient of thermal expansion of the at least one mirror.

Abstract: A reflective optical element for a microlithographic projection exposure apparatus, a mask inspection apparatus or the like. The reflective optical element has an optically effective surface, an element substrate (12, 32, 42, 52), a reflection layer system (14, 34, 44, 54) and at least one deformation reduction layer (15, 35, 45, 55, 58). When the optically effective surface (11, 31, 41, 51) is irradiated with electromagnetic radiation, a maximum deformation level of the reflection layer system is reduced in comparison with a deformation level of an analogously constructed reflective optical element without the deformation reduction layer.

Abstract: A film element of an EUV-transmitting wavefront correction device is arranged in a beam path and includes a first layer of first layer material having a first complex refractive index n1=(1??1)+i?1, with a first optical layer thickness, which varies locally over the used region in accordance with a first layer thickness profile, and a second layer of second layer material having a second complex refractive index n2=(1??2)+i?2, with a second optical layer thickness, which varies locally over the used region in accordance with a second layer thickness profile. The first and second layer thickness profiles differ. The deviation ?1 of the real part of the first refractive index from 1 is large relative to the absorption coefficient ?1 of the first layer material and the deviation ?2 of the real part of the second refractive index from 1 is small relative to the absorption coefficient ?2 of the second layer material.