Patents by Inventor Rumen RACHINSKY

Rumen RACHINSKY has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Programmable read-only memory having at least four memory cells, each having switching element and data storage element arranged so that each switching element is connected to at least two selection lines and the storage elements are shared by a data line
    Patent number: 10930359
    Abstract: A programmable memory device. The device comprises at least four memory cells, each cell comprising a data storage element connected to a switching element. The device is arranged such that each switching element is connected to at least two selection lines for selecting of at least one of the at least four memory cells. At least one of the four memory cells is selectable by applying a voltage to at least one of the at least two selection lines, such that at least two switching elements share one of the at least two selection lines and one of the at least two switching elements shares another one of the at least two selection lines with another switching element and such that each data storage element is connected to a shared data line for applying a programming or reading voltage to each storage element of the at least four memory cells to allow for programming or reading of the selected memory cell.
    Type: Grant
    Filed: March 18, 2019
    Date of Patent: February 23, 2021
    Assignee: X-FAB SEMICONDUCTOR FOUNDRIES GMBH
    Inventors: Rumen Rachinsky, Aleksandar Radev, Valeri Ivanov
  • PROGRAMMABLE READ-ONLY MEMORY DEVICE
    Publication number: 20190287636
    Abstract: A programmable memory device. The device comprises at least four memory cells, each cell comprising a data storage element connected to a switching element. The device is arranged such that each switching element is connected to at least two selection lines for selecting of at least one of the at least four memory cells. At least one of the four memory cells is selectable by applying a voltage to at least one of the at least two selection lines, such that at least two switching elements share one of the at least two selection lines and one of the at least two switching elements shares another one of the at least two selection lines with another switching element and such that each data storage element is connected to a shared data line for applying a programming or reading voltage to each storage element of the at least four memory cells to allow for programming or reading of the selected memory cell.
    Type: Application
    Filed: March 18, 2019
    Publication date: September 19, 2019
    Inventors: Rumen RACHINSKY, Aleksandar RADEV, Valeri IVANOV