Patents by Inventor Runar Törnqvist

Runar Törnqvist has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9394610
    Abstract: A source for feeding one or more gaseous precursors onto a surface of a substrate and an arrangement for processing the substrate by way of subjecting the surface of the substrate to alternately repetitive surface reactions of the precursors, the source including a gas feed member for feeding at least one or more precursors onto the surface of the substrate. The gas feed member is adapted rotatable about a rotation axis, the rotation axis being arranged to extend substantially parallel to the surface of the substrate.
    Type: Grant
    Filed: April 29, 2011
    Date of Patent: July 19, 2016
    Assignee: BENEQ OY
    Inventor: Runar Törnqvist
  • Publication number: 20130047921
    Abstract: A source for feeding one or more gaseous precursors onto a surface of a substrate and an arrangement for processing the substrate by way of subjecting the surface of the substrate to alternately repetitive surface reactions of the precursors, the source including a gas feed member for feeding at least one or more precursors onto the surface of the substrate. The gas feed member is adapted rotatable about a rotation axis, the rotation axis being arranged to extend substantially parallel to the surface of the substrate.
    Type: Application
    Filed: April 29, 2011
    Publication date: February 28, 2013
    Applicant: BENEQ OY
    Inventor: Runar Törnqvist
  • Publication number: 20120177903
    Abstract: A multilayer coating and a method for fabricating a multilayer coating on a substrate (3). The coating is arranged to minimize diffusion of atoms through the coating, the method comprising the steps of introducing a substrate (3) to a reaction space, depositing a layer of first material (1) on the substrate (3), and depositing a layer of second material (2) on the layer of first material (1). Depositing the layer of first material (1) and the layer of second material (2) comprises alternately introducing precursors into the reaction space and subsequently purging the reaction space after each introduction of a precursor. The first material being selected from the group of titanium oxide and aluminum oxide, the second material being the other from the group of titanium oxide and aluminum oxide. An interfacial region is formed in between titanium oxide and aluminum oxide.a.
    Type: Application
    Filed: September 13, 2010
    Publication date: July 12, 2012
    Applicant: Beneq Oy
    Inventors: Sami Sneck, Nora Isomäki, Jarmo Maula, Olli Jylhä, Matti Putkonen, Runar Törnqvist, Mikko Söderlund
  • Publication number: 20080063802
    Abstract: A micro-optical element is produced through vapor deposition techniques, such as atomic layer deposition. An optical structure having a surface with uneven structures is exposed to one or more precursor vapors to create a self-limiting film growth on the surface of the optical structure. The film thickness may be increased and controlled by subsequent exposures. The resulting film conforms to surface structures having varying complex dimensions.
    Type: Application
    Filed: November 8, 2007
    Publication date: March 13, 2008
    Applicant: Planar Systems, Inc.
    Inventors: Jarmo Maula, Runar Törnqvist
  • Patent number: 6388378
    Abstract: The present invention concerns an insulating film of a thin film structure deposited on an essentially alkali metal-free glass substrate, comprising alternating layers of aluminium oxide and titanium oxide and thin film electriluminescent device wherein said insulating film is incorporated as an insulating layer between the phosphor layer and the electrode layers. In the insulating film, the ratio between the cumulative thicknesses of said titanium oxide and said aluminium oxide is less than 0.75, and due to the ratio lower than that of prior art, good resistance against cracking of the film is obtained.
    Type: Grant
    Filed: July 15, 1999
    Date of Patent: May 14, 2002
    Assignee: Planar Systems Inc.
    Inventors: Runar Törnqvist, Tuomas Pitkänen
  • Patent number: 6248605
    Abstract: The present invention concerns a method of growing a cerium-doped SrS phosphor layer by the Atomic Layer Epitaxy-method. According to the invention an organometallic cerium compound containing at least one cyclopentadienyl type ligand is used as a precursor for the dopant cerium. The cyclopentadienyl type cerium compounds can be used as ALE precursors at about 400° C. substrate temperatures without any observable thermal decomposition during processing.
    Type: Grant
    Filed: June 2, 1999
    Date of Patent: June 19, 2001
    Assignee: Planar Systems Inc.
    Inventors: Gitte Härkönen, Tomi Kervinen, Erkki Soininen, Runar Törnqvist, Kirsi Vasama, Mario Glanz, Herbert Schumann