Abstract: A system for crystal growth having rapid heating and cooling. A fluid-cooling jacket having a reflective shield contained therein is disposed around a heating cylinder in which crystal growth takes place. A heating coil is disposed round the cooling jacket. The invention also includes a method of crystal growth and semiconductor devices formed using the inventive methods and systems.

Abstract: A system for crystal growth having rapid heating and cooling. A fluid-cooling jacket having a reflective shield contained therein is disposed around a heating cylinder in which crystal growth takes place. A heating coil is disposed round the cooling jacket. The invention also includes a method of crystal growth and semiconductor devices formed using the inventive methods and systems.

Abstract: The invention relates to a device for depositing especially crystalline layers on especially crystalline substrates by means of reaction gases fed to a heated process chamber. Said process chamber is formed by the cavity of an especially multi-part graphite tube arranged in a reactor housing that especially comprises quartz walls. Said reactor housing, in the area of the process chamber, is enclosed by a high-frequency coil and the space between the reactor housing wall and the graphite tube is filled with a graphite foam sleeve. In order to improve heat insulation, the graphite foam sleeve is fully slit. The slot is wider than the maximum thermal elongation of the graphite foam sleeve in the peripheral direction to be expected when the device is heated up to process temperature.

Abstract: The invention relates to a device for depositing layers, particularly crystalline layers, onto substrates. Said device comprises a process chamber arranged in a reactor housing where the floor thereof, comprises at least one substrate holder which is rotatably driven by a gas flow flowing in a feed pipe associated with said floor. Said substrate holder is disposed in a bearing cavity on a gas cushion and held in place thereby. The aim of the invention is to technologically improve the design of a substrate holder which is rotatably mounted in a gas flow, particularly in a linear cross-flowing process chamber. Said bearing cavity is associated with a tray-shaped element arranged below the outflow of the feed pipe.

Abstract: The invention relates to a device for depositing especially crystalline layers on especially crystalline substrates by means of reaction gases fed to a heated process chamber. Said process chamber is formed by the cavity of an especially multi-part graphite tube arranged in a reactor housing that especially comprises quartz walls. Said reactor housing, in the area of the process chamber, is enclosed by a high-frequency coil and the space between the reactor housing wall and the graphite tube is filled with a graphite foam sleeve. In order to improve heat insulation, the graphite foam sleeve is fully slit. The slot is wider than the maximum thermal elongation of the graphite foam sleeve in the peripheral direction to be expected when the device is heated up to process temperature.

Abstract: The invention relates to a device for depositing layers, particularly crystalline layers, onto substrates. Said device comprises a process chamber arranged in a reactor housing where the floor thereof, comprises at least one substrate holder which is rotatably driven by a gas flow flowing in a feed pipe associated with said floor. Said substrate holder is disposed in a bearing cavity on a gas cushion and held in place thereby. The aim of the invention is to technologically improve the design of a substrate holder which is rotatably mounted in a gas flow, particularly in a linear cross-flowing process chamber. Said bearing cavity is associated with a tray-shaped element arranged below the outflow of the feed pipe.

Abstract: A susceptor for a device for epitaxially growing objects made of one of SiC, a Group 3B-nitride and alloys thereof on a substrate to be received in the susceptor, includes plurality of separate susceptor wall pieces defining a top wall, a bottom wall and lateral walls. The wall pieces are made of a material which may be heated by induction and are secured to each other to form the susceptor. A channel is defined by susceptor walls adapted to receive the substrate and through which a source material for the growth is to be fed. At least one SiC-plate is inserted to cover at least one of the top and bottom walls and to extend between and separate the lateral walls and the at least one of the top and bottom walls.

Abstract: A susceptor for a device for epitaxially growing objects of a material on a substrate. The material is selected from the group consisting of SiC, a Group 3B-nitride, and alloys of SiC and a Group 3B-nitride. The susceptor includes at least two channels each adapted to receive at least one substrate for growth of at least one of the objects and each adapted to receive a flow of the material to be fed to the susceptor for the growth of the objects. Walls surround the at least two channels including a central part between the channels. Heat is applied surrounding the susceptor, including the walls and the central part. A higher electrical resistance for induction currents generated by the heating is provided over at least one cross-sectional area of the susceptor. The higher electrical resistance is created by a physical division of the susceptor walls and a thin plate of SiC.