Abstract: The present disclosure provides a manufacturing method of a semiconductor device, including: providing a substrate; forming a film stack structure on the substrate, a top of the film stack structure being a cover layer; forming a mask structure on the cover layer, the mask structure including a mask layer and a pattern transfer layer sequentially stacked from top to bottom; performing a first etching on the mask structure to form first blind holes, the first blind holes running through the mask structure and terminating in the cover layer; and performing a second etching on the mask structure, and removing the mask layer, to flatten a top surface of the pattern transfer layer and trim bottoms of the first blind holes.

Abstract: The present application relates to a semiconductor equipment regulation method, including: providing a simulated wafer; placing the simulated wafer in an etching chamber, and conditioning a temperature in the chamber by using a temperature control device while the simulated wafer is etched by using an etching gas; during the etching process, forming a polymer layer on a surface of each etch hole; acquiring a thickness distribution map of the polymer layer in the entire simulated wafer; comparing the acquired thickness distribution map with a target thickness distribution map; and adjusting a temperature control effect through using the temperature control device on each region of the simulated wafer according to a result of the comparison, so as to adjust thickness uniformity of the polymer layer in the entire wafer.

Abstract: The invention provides a method for synthesizing a mesoporous zeolite ETS-10 containing a metal without a templating agent. The method according to the invention comprises the steps of: mixing a silicon source with a NaOH solution to obtain a mixed solution so that the content of Na2O in the mixed solution is 10.0% to 20.0% by weight; adding a KOH or KF solution so that the content of K2O is 10.0% to 25.0% by weight and stirring it well; adding a titanium source solution and stirring it well; adding a precursor compound containing metal Ni and/or Co and stirring it well; and subjecting it to a crystallization reaction to obtain the mesoporous zeolite ETS-10. The mesoporous zeolite ETS-10 obtained by the invention has a specific surface area of 320 to 420 m2/g, a mesoporous volume of 0.11 to 0.21 cm3/g, and thus can be used as a catalyst and a support thereof in synthesis industry for macromolecular fine chemicals.

Abstract: The invention provides a method for synthesizing a mesoporous zeolite ETS-10 containing a metal without a templating agent. The method according to the invention comprises the steps of: mixing a silicon source with a NaOH solution to obtain a mixed solution so that the content of Na2O in the mixed solution is 10.0% to 20.0% by weight; adding a KOH or KF solution so that the content of K2O is 10.0% to 25.0% by weight and stirring it well; adding a titanium source solution and stirring it well; adding a precursor compound containing metal Ni and/or Co and stirring it well; and subjecting it to a crystallization reaction to obtain the mesoporous zeolite ETS-10. The mesoporous zeolite ETS-10 obtained by the invention has a specific surface area of 320 to 420 m2/g, a mesoporous volume of 0.11 to 0.21 cm3/g, and thus can be used as a catalyst and a support thereof in synthesis industry for macromolecular fine chemicals.