Patents by Inventor Runzi Hao

Runzi Hao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Three-dimensional magnetic device and magnetic memory
    Patent number: 11114145
    Abstract: Disclosed is a three-dimensional magnetic device based on a spin Hall effect which includes an internal electrode, at least one magnetic junction and at least one external electrode. The internal electrode, the at least one magnetic junction and the at least one external electrode have columnar structures. Each of the at least one magnetic junction comprises a magnetic free layer, a magnetic reference layer and a non-magnetic spacing layer between magnetic free layer and magnetic reference layer. The magnetic free layer is in contact with internal electrode, and the magnetic reference layer in each of the at least one magnetic junction is in contact with a corresponding one of the at least one external electrode. The three-dimensional magnetic device may be stacked in a normal direction of the bottom surface of the internal electrode. Magnetization reversal of three-dimensional magnetic device may be realized by a combination of a spin-orbit torque and a spin transfer torque.
    Type: Grant
    Filed: April 10, 2020
    Date of Patent: September 7, 2021
    Assignee: Xi'an Jiaotong University
    Inventors: Tai Min, Runzi Hao, Lei Wang, Xue Zhou
  • THREE-DIMENSIONAL MAGNETIC DEVICE AND MAGNETIC MEMORY
    Publication number: 20210005235
    Abstract: Disclosed is a three-dimensional magnetic device based on a spin Hall effect which includes an internal electrode, at least one magnetic junction and at least one external electrode. The internal electrode, the at least one magnetic junction and the at least one external electrode have columnar structures. Each of the at least one magnetic junction comprises a magnetic free layer, a magnetic reference layer and a non-magnetic spacing layer between magnetic free layer and magnetic reference layer. The magnetic free layer is in contact with internal electrode, and the magnetic reference layer in each of the at least one magnetic junction is in contact with a corresponding one of the at least one external electrode. The three-dimensional magnetic device may be stacked in a normal direction of the bottom surface of the internal electrode. Magnetization reversal of three-dimensional magnetic device may be realized by a combination of a spin-orbit torque and a spin transfer torque.
    Type: Application
    Filed: April 10, 2020
    Publication date: January 7, 2021
    Inventors: Tai Min, Runzi Hao, Lei Wang, Xue Zhou