Patents by Inventor Ruo Qing Su

Ruo Qing Su has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7622391
    Abstract: A method of forming a semiconductor structure comprises providing a semiconductor structure comprising a layer of a dielectric material provided over an electrically conductive feature. An opening is formed in the layer of dielectric material. The opening is located over the electrically conductive feature and has a first lateral dimension. A cavity is formed in the electrically conductive feature. The cavity has a second lateral dimension being greater than the first lateral dimension. The cavity and the opening are filled with an electrically conductive material.
    Type: Grant
    Filed: February 23, 2007
    Date of Patent: November 24, 2009
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Kai Frohberg, Thomas Werner, Ruo Qing Su
  • Publication number: 20080026564
    Abstract: A method of forming a semiconductor structure comprises providing a semiconductor structure comprising a layer of a dielectric material provided over an electrically conductive feature. An opening is formed in the layer of dielectric material. The opening is located over the electrically conductive feature and has a first lateral dimension. A cavity is formed in the electrically conductive feature. The cavity has a second lateral dimension being greater than the first lateral dimension. The cavity and the opening are filled with an electrically conductive material.
    Type: Application
    Filed: February 23, 2007
    Publication date: January 31, 2008
    Inventors: Kai Frohberg, Thomas Werner, Ruo Qing Su