Abstract: A device includes a stack of at least two piezoelectric layers configured to propagate a Lamb wave in a mode having an order corresponding to a number of piezoelectric layers of the stack. The stack includes a first piezoelectric layer and a second piezoelectric layer disposed on the first piezoelectric layer. The first piezoelectric layer has a first cut plane orientation, and the second piezoelectric layer has a second cut plane orientation complementary to the first cut plane orientation. The device further includes an interdigitated transducer (IDT) disposed on at least a top surface of the stack or a bottom surface of the stack. In some embodiments, the device is an acoustic resonator. In some embodiments, the device is an acoustic delay line.

Abstract: The present disclosure provides a silicon wafer, a solar cell, and a solar module. In an example silicon wafer, a concentration of an antimony element in the silicon wafer ranges from 4E+14 cm?3 to 2E+16 cm?3, and an oxygen content in the silicon wafer is less than 25 ppma.

Abstract: The present disclosure provides a silicon wafer, a solar cell, and a solar module. In an example silicon wafer, a concentration of an antimony element in the silicon wafer ranges from 4E+14 cm?3 to 2E+16 cm?3, and a minority carrier lifetime of the silicon wafer is greater than or equal to 200 ?s.

Abstract: A device includes a pair of substrate layer corresponding to a carrier substrate, an intermediary layer disposed on the pair of substrate layers, a cavity region disposed between the pair of substrate layers underneath the intermediary layer, a piezoelectric layer including a lithium-based film disposed on the intermediary layer, and a plurality of interdigital transducer electrodes disposed on the piezoelectric layer. The plurality of interdigital transducer electrodes includes an outer signal electrode, an inner signal electrode, an outer ground electrode and an inner ground electrode.

Abstract: Exemplary multimeter-wave acoustic resonators and methods employing intermediate layers in the fabricating of piezoelectric devices based on thin-film lithium niobate/lithium tantalate or aluminum nitride/scandium aluminum nitride on a substrate in a film stack that can use higher order first and third antisymmetric bulk acoustic tones. In some embodiments, the acoustic resonator comprises a base substrate of a material with low electromagnetic loss, a piezoelectric film layer that is suspended over the base substrate, and an interdigitated electrode (IDE) array formed by a pair of independently addressable microelectrode arrays disposed on a top surface of the piezoelectric film layer to resonantly vibrate at a range of frequencies greater than 6 GHz. The piezoelectric film layer was formed over an intermediate or sacrificial layer positioned between the base substrate and the piezoelectric film layer and then etched to provide the piezoelectric film layer suspended over the base substrate.

Abstract: In certain examples, methods and apparatus are directed to a resonator-based circuit which, in operation, has an electrically-conductive band (“band”) at least partially surrounding a center electrode which includes the piezoelectric material of the circuit's resonator. In particular examples, the band acts to electrically load vibrations near resonance and consequently, spurious mode suppression is realized. In more particular example embodiments, the band maintains TE mode while eliminating lateral spurious tones, and in one application-specific example, the resonator-based circuitry and the electrical-conductive band are to provide of facilitate piezoelectric power conversion.

Abstract: An acoustic resonator includes a piezoelectric thin film (PTF) disposed on a carrier substrate. The PTF confines a fundamental shear-horizontal (SH0) surface-acoustic wave (SAW) within the PTF. The acoustic resonator includes an input bus line coupled to an input source and a ground bus line coupled to a ground potential. The acoustic resonator includes a first grating reflector disposed at a first end of the PTF and coupled between the input bus line and the ground bus line. The acoustic resonator includes a second grating reflector disposed at a second end of the PTF and coupled between the input bus line and the ground bus line. The acoustic resonator includes interdigital transducers (IDTs) disposed between the first grating reflector and the second grating reflector. Each IDT includes an input electrode coupled to the input bus line, and a ground electrode coupled to the ground bus line.

Abstract: A piezoelectric thin film suspended above a carrier substrate is adapted to propagate an acoustic wave in a Lamb mode excited by a component of an electric field that is oriented in a longitudinal direction along a length of the piezoelectric thin film. A first signal electrode is located on the piezoelectric thin film and oriented in a transverse direction perpendicular to the longitudinal direction. A first ground electrode is located on the piezoelectric thin film and oriented in the transverse direction. The first ground electrode is separated from the first signal electrode by a gap in which the acoustic wave resonates. A first release window and a second release window are located at a first end and a second end of the piezoelectric thin film, respectively. Intermittent release windows are located beyond distal ends of the first signal electrode and the first ground electrode.

Abstract: A piezoelectric thin film (PTF) is located above a carrier substrate. The PTF may be X-cut LiNbO3 thin film adapted to propagate an acoustic wave in at least one of a first mode excited by an electric field oriented in a longitudinal direction along a length of the PTF or a second mode excited by the electric field oriented at least partially in a thickness direction of the PTF. A first interdigitated transducer (IDT) is disposed on a first end of the PTF. The first IDT is to convert a first electromagnetic signal, traveling in the longitudinal direction, into the acoustic wave. A second IDT is disposed on a second end of the PTF with a gap between the second IDT and the first IDT. The second IDT is to convert the acoustic wave into a second electromagnetic signal.

Abstract: An apparatus includes a piezoelectric thin film suspended above a carrier substrate, where the piezoelectric thin film is of one of lithium niobate (LiNbO3) or lithium tantalate (LiTaO3) adapted to propagate an acoustic wave in a Lamb wave mode excited by a component of an electric field that is oriented in a longitudinal direction along a length of the piezoelectric thin film. A signal electrode is disposed on, and in physical contact with, the piezoelectric thin film and oriented perpendicular to the longitudinal direction. A ground electrode disposed on, and in physical contact with, the piezoelectric thin film and oriented perpendicular to the longitudinal direction, where the ground electrode is separated from the signal electrode by a gap comprising a longitudinal distance and in which the acoustic wave resonates. A release window is formed within the piezoelectric thin film adjacent to the ground electrode.

Abstract: A method includes depositing a first metal layer on a semiconductor substrate; etching the first metal layer to form a first electrode having a first lead; depositing a piezoelectric layer on the semiconductor substrate and first electrode; etching the piezoelectric layer to a shape of the gyrator to be formed within the circulator; depositing a second metal layer on the piezoelectric layer; etching the second metal layer to form a second electrode having a second lead, the second electrode being positioned opposite the first electrode, wherein the first lead and the second lead form an electrical port; depositing a magnetostrictive layer on the second electrode; etching the magnetostrictive layer to approximately the shape of the piezoelectric layer; depositing a third metal layer on the magnetostrictive layer; and etching the third metal layer to form a metal coil that has a gap on one side to define a magnetic port.

Abstract: A piezoelectric thin film (PTF) is located above a carrier substrate. The PTF may be Z-cut LiNbO3 thin film adapted to propagate an acoustic wave in at least one of a first mode excited by an electric field oriented in a longitudinal direction along a length of the PTF or a second mode excited by the electric field oriented at least partially in a thickness direction of the PTF. A first interdigitated transducer (IDT) is disposed on a first end of the PTF. The first IDT is to convert a first electromagnetic signal, traveling in the longitudinal direction, into the acoustic wave. A second IDT is disposed on a second end of the PTF with a gap between the second IDT and the first IDT. The second IDT is to convert the acoustic wave into a second electromagnetic signal, and the gap determines a time delay of the acoustic wave.

Abstract: A device includes a stack of at least two piezoelectric layers configured to propagate a Lamb wave in a mode having an order corresponding to a number of piezoelectric layers of the stack. The stack includes a first piezoelectric layer and a second piezoelectric layer disposed on the first piezoelectric layer. The first piezoelectric layer has a first cut plane orientation, and the second piezoelectric layer has a second cut plane orientation complementary to the first cut plane orientation. The device further includes an interdigitated transducer (IDT) disposed on at least a top surface of the stack or a bottom surface of the stack. In some embodiments, the device is an acoustic resonator. In some embodiments, the device is an acoustic delay line.

Abstract: A piezoelectric thin-film suspended above a carrier substrate. An input interdigital transducer (IDT) having first interdigitated electrodes is disposed at different locations along the horizontal axis and on the first side of the piezoelectric thin-film. Each opposing pair of the first interdigitated electrodes is to selectively transduce a particular frequency range of an input electrical signal that varies in frequency over time into an acoustic wave of a laterally vibrating mode based on a pitch between electrodes of the opposing pair. An output IDT that includes second interdigitated electrodes is disposed at different locations along the horizontal axis and on the second side of the piezoelectric thin-film. Each opposing pair of the second interdigitated electrodes is to convert the acoustic wave transduced by the respective opposing pair of the first interdigitated electrodes into a compressed pulse.

Abstract: A device includes a pair of substrate layer corresponding to a carrier substrate, an intermediary layer disposed on the pair of substrate layers, a cavity region disposed between the pair of substrate layers underneath the intermediary layer, a piezoelectric layer including a lithium-based film disposed on the intermediary layer, and a plurality of interdigital transducer electrodes disposed on the piezoelectric layer. The plurality of interdigital transducer electrodes includes an outer signal electrode, an inner signal electrode, an outer ground electrode and an inner ground electrode.

Abstract: An apparatus includes parallel delay lines, each exhibiting a delay; a first set of switches for each port of a first set of ports, each of which is to selectively couple a port of the first set of ports to first ends of the delay lines; a second set of switches for each port of a second set of ports, each of which to selectively couple a port of the second set of ports to second ends of the delay lines. A signal source generates a series of clock signals that are sequentially time delayed between the first set of switches and the second set of switches, where an input signal at one of the first or second sets of ports travels back and forth across the first and second sets of delay lines according to activation of the first set and second set of switches until being output.

Abstract: An acoustic resonator includes a piezoelectric thin film (PTF) disposed on a carrier substrate. The PTF confines a fundamental shear-horizontal (SH0) surface-acoustic wave (SAW) within the PTF. The acoustic resonator includes an input bus line coupled to an input source and a ground bus line coupled to a ground potential. The acoustic resonator includes a first grating reflector disposed at a first end of the PTF and coupled between the input bus line and the ground bus line. The acoustic resonator includes a second grating reflector disposed at a second end of the PTF and coupled between the input bus line and the ground bus line. The acoustic resonator includes interdigital transducers (IDTs) disposed between the first grating reflector and the second grating reflector. Each IDT includes an input electrode coupled to the input bus line, and a ground electrode coupled to the ground bus line.

Abstract: A piezoelectric thin film suspended above a carrier substrate is adapted to propagate an acoustic wave in a Lamb mode excited by a component of an electric field that is oriented in a longitudinal direction along a length of the piezoelectric thin film. A first signal electrode is located on the piezoelectric thin film and oriented in a transverse direction perpendicular to the longitudinal direction. A first ground electrode is located on the piezoelectric thin film and oriented in the transverse direction. The first ground electrode is separated from the first signal electrode by a gap in which the acoustic wave resonates. A first release window and a second release window are located at a first end and a second end of the piezoelectric thin film, respectively. Intermittent release windows are located beyond distal ends of the first signal electrode and the first ground electrode.

Abstract: An apparatus includes a piezoelectric thin film suspended above a carrier substrate, where the piezoelectric thin film is of one of lithium niobate (LiNbO3) or lithium tantalate (LiTaO3) adapted to propagate an acoustic wave in a Lamb wave mode excited by a component of an electric field that is oriented in a longitudinal direction along a length of the piezoelectric thin film. A signal electrode is disposed on, and in physical contact with, the piezoelectric thin film and oriented perpendicular to the longitudinal direction. A ground electrode disposed on, and in physical contact with, the piezoelectric thin film and oriented perpendicular to the longitudinal direction, where the ground electrode is separated from the signal electrode by a gap comprising a longitudinal distance and in which the acoustic wave resonates. A release window is formed within the piezoelectric thin film adjacent to the ground electrode.

Abstract: A piezoelectric thin film (PTF) is located above a carrier substrate. The PTF can be an aluminum nitride thin film adapted to propagate an acoustic wave in at least one of a first mode excited by an electric field oriented at least partially in a longitudinal direction along a length of the PTF or a second mode excited by the electric field oriented in a thickness direction of the PTF. A first interdigitated transducer (IDT) is disposed on a first end of the PTF and converts a first electromagnetic signal, traveling in the longitudinal direction, into the acoustic wave. A second IDT is disposed on a second end of the PTF with a gap between the second IDT and the first IDT. The second IDT is to convert the acoustic wave into a second electromagnetic signal, and the gap determines a time delay of the acoustic wave.