Abstract: A method for producing a wide steel strip using thin slab continuous casting and rolling by the following steps a) casting a molten steel into a thin slab having a thickness of between 50 and 90 mm; b) cutting; c) soaking; d) heating by electromagnetic induction; e) descaling; f) rolling; g) cooling with laminar flow; and h) coiling. The method can effectively control the solution and precipitation of carbon, nitrogen, and sulfide in steel with a low cost. The process is easy and flexible, and steel can be produced in a wide range of categories. Further provided is a system for producing a wide steel strip with thin slab continuous casting and rolling.

Abstract: A method for producing a wide steel strip using thin slab continuous casting and rolling by the following steps a) casting a molten steel into a thin slab having a thickness of between 50 and 90 mm; b) cutting; c) soaking; d) heating by electromagnetic induction; e) descaling; f) rolling; g) cooling with laminar flow; and h) coiling. The method can effectively control the solution and precipitation of carbon, nitrogen, and sulfide in steel with a low cost. The process is easy and flexible, and steel can be produced in a wide range of categories. Further provided is a system for producing a wide steel strip with thin slab continuous casting and rolling.

Abstract: A method and apparatus for making an integrated circuit takes advantage of both polarized and phase shifted light in order to achieve a fine feature. The feature on the integrated circuit is obtained by exposing a first region to light that has a first polarization state, exposing a second portion of the wafer to polarized light in the first polarization state but which is also phase shifted about 180 degrees. A region between the first and second region may be unexposed to light. The region between the first and the second region is the position of the fine feature. In areas where the first region and the second region need to be joined together but no feature is intended to be formed, there is a third region between the first and second regions which is exposed to polarized light that has a second polarization state which is orthogonal to that of the polarized light which exposes the first and second regions.

Abstract: A method of patterning a wafer using four areas with differing exposure characteristics is disclosed. Two areas are phase shifted relative to the other two areas in order to create unexposed areas on the integrated circuit. Two different areas have polarizations orthogonal to each other, are frequency shifted relative to the two other areas, or are exposed by light at a time different than the two other areas to form exposed areas on the integrated circuit. The exposed areas are subsequently removed from the integrated circuit. In one embodiment, the four areas are on the same mask. The use of four areas with differing exposure characteristics allows for the patterning of more complicated and smaller geometric patterns on the integrated circuit than traditional patterning methods.

Abstract: A method of patterning a wafer using four areas with differing exposure characteristics is disclosed. Two areas are phase shifted relative to the other two areas in order to create unexposed areas on the integrated circuit. Two different areas have polarizations orthogonal to each other, are frequency shifted relative to the two other areas, or are exposed by light at a time different than the two other areas to form exposed areas on the integrated circuit. The exposed areas are subsequently removed from the integrated circuit. In one embodiment, the four areas are on the same mask. The use of four areas with differing exposure characteristics allows for the patterning of more complicated and smaller geometric patterns on the integrated circuit than traditional patterning methods.

Abstract: A method and apparatus for making an integrated circuit takes advantage of both polarized and phase shifted light in order to achieve a fine feature. The feature on the integrated circuit is obtained by exposing a first region to light that has a first polarization state, exposing a second portion of the wafer to polarized light in the first polarization state but which is also phase shifted about 180 degrees. A region between the first and second region may be unexposed to light. The region between the first and the second region is the position of the fine feature. In areas where the first region and the second region need to be joined together but no feature is intended to be formed, there is a third region between the first and second regions which is exposed to polarized light that has a second polarization state which is orthogonal to that of the polarized light which exposes the first and second regions.