Patents by Inventor Rupert Wu

Rupert Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Window interface layer of a light-emitting diode
    Patent number: 7199390
    Abstract: This invention is about a window interface layer in a light-emitting diode which comprises an n-type GaAs substrate with an n-type ohmic electrode at the bottom side thereof; an n-type AlGaInP cladding layer formed atop the substrate; an undoped AlGaInP active layer formed atop the n-type cladding layer; a p-AlGaInP cladding layer formed atop the active layer; a p-type window layer made of GaP; a p-type ohmic electrode formed atop the p-type window layer; and a highly doped p-type interface layer made of GaxIn1-xP (0.6?x?0.9) and interposed between the p-type cladding layer and p-type window layer wherein the highly doped p-GaInP interface layer possesses a band gap which is higher than that of the active layer and, however, smaller than that of the p-type cladding layer, and wherein the lattice constant lies between GaAs and GaP.
    Type: Grant
    Filed: August 8, 2006
    Date of Patent: April 3, 2007
    Assignee: Arima Optoelectronics Corp.
    Inventors: Pei-Jih Wang, Rupert Wu
  • WINDOW INTERFACE LAYER OF A LIGHT-EMITTING DIODE
    Publication number: 20070045608
    Abstract: This invention is about a window interface layer in a light-emitting diode which comprises an n-type GaAs substrate with an n-type ohmic electrode at the bottom side thereof; an n-type AlGaInP cladding layer formed atop the substrate; an undoped AlGaInP active layer formed atop the n-type cladding layer; a p-AlGaInP cladding layer formed atop the active layer; a p-type window layer made of GaP; a p-type ohmic electrode formed atop the p-type window layer; and a highly doped p-type interface layer made of GaxIn1-xP (0.6?x?0.9) and interposed between the p-type cladding layer and p-type window layer wherein the highly doped p-GaInP interface layer possesses a band gap which is higher than that of the active layer and, however, smaller than that of the p-type cladding layer, and wherein the lattice constant lies between GaAs and GaP.
    Type: Application
    Filed: August 8, 2006
    Publication date: March 1, 2007
    Inventors: Pei-Jih Wang, Rupert Wu