Patents by Inventor Russ Meyer

Russ Meyer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • PHONE TEST SET TDR
    Publication number: 20120237001
    Abstract: A phone test set provides TDR capability in a hand held device, enabling measurements on phone lines including, distance to opens, distance to shorts, and distance to bridge taps.
    Type: Application
    Filed: March 15, 2011
    Publication date: September 20, 2012
    Applicant: FLUKE CORPORATION
    Inventors: Paul Alexander, Melissa Eiles, Paul S. Swanson, Russ Meyer, Danny L. Maupin, Sean O'Brien
  • Methods of forming an electrical contact to semiconductive material
    Patent number: 6472328
    Abstract: A method of forming an electrical contact to semiconductive material includes forming an insulative layer over a contact area of semiconductive material. A contact opening is etched through the insulative layer to the semiconductive material contact area. Such etching changes an outer portion of the semiconductive material exposed by the etching. The change is typically in the form of modifying crystalline structure of only an outer portion from that existing prior to the etch. The changed outer portion of the semiconductive material is etched substantially selective relative to semiconductive material therebeneath which is unchanged. The preferred etching chemistry is a tetramethyl ammonium hydroxidde solution. A conductive material within the contact opening is formed in electrical connection with the semiconductive material.
    Type: Grant
    Filed: June 29, 2001
    Date of Patent: October 29, 2002
    Assignee: Micron Technology, Inc.
    Inventors: Terry Gilton, Casey Kurth, Russ Meyer, Phillip G. Wald
  • Methods of forming an electrical contact to semiconductive material
    Publication number: 20010039121
    Abstract: A method of forming an electrical contact to semiconductive material includes forming an insulative layer over a contact area of semiconductive material. A contact opening is etched through the insulative layer to the semiconductive material contact area. Such etching changes an outer portion of the semiconductive material exposed by the etching. The change is typically in the form of modifying crystalline structure of only an outer portion from that existing prior to the etch. The changed outer portion of the semiconductive material is etched substantially selective relative to semiconductive material therebeneath which is unchanged. The preferred etching chemistry is a tetramethyl ammonium hydroxide solution. A conductive material within the contact opening is formed in electrical connection with the semiconductive material.
    Type: Application
    Filed: June 29, 2001
    Publication date: November 8, 2001
    Inventors: Terry Gilton, Casey Kurth, Russ Meyer, Phillip G. Wald
  • Methods of forming electrical contacts
    Patent number: 6281131
    Abstract: A method of forming an electrical contact to semiconductive material includes forming an insulative layer over a contact area of semiconductive material. A contact opening is etched through the insulative layer to the semiconductive material contact area. Such etching changes an outer portion of the semiconductive material exposed by the etching. The change is typically in the form of modifying crystalline structure of only an outer portion from that existing prior to the etch. The changed outer portion of the semiconductive material is etched substantially selective relative to semiconductive material therebeneath which is unchanged. The preferred etching chemistry is a tetramethyl ammonium hydroxide solution. A conductive material within the contact opening is formed in electrical connection with the semiconductive material.
    Type: Grant
    Filed: February 27, 1998
    Date of Patent: August 28, 2001
    Assignee: Micron Technology, Inc.
    Inventors: Terry Gilton, Casey Kurth, Russ Meyer, Phillip G. Wald