Abstract: A wide bandwidth time division duplex (TDD) transceiver includes a transmitter, a receiver, and a bandpass filter implemented with a plurality of acoustic resonators including at least one shunt resonator and at least one series resonator. A transmit/receive switch is configured to selectively connect a first terminal of the bandpass filter to either an output of the transmitter or an input of the receiver. Each of the plurality of acoustic resonators is a high power transversely-excite film bulk acoustic resonator.

Abstract: A wide bandwidth time division duplex (TDD) transceiver includes a transmitter, a receiver, and a bandpass filter implemented with a plurality of acoustic resonators including at least one shunt resonator and at least one series resonator. A transmit/receive switch is configured to selectively connect a first terminal of the bandpass filter to either an output of the transmitter or an input of the receiver. Each of the plurality of acoustic resonators is a high power transversely-excite film bulk acoustic resonator.

Abstract: A coupler is presented that has high-directivity and low coupling coefficient variation. The coupler includes a first trace associated with a first port and a second port. The first trace includes a first main arm, a first connecting trace connecting the first main arm to the second port, and a non-zero angle between the first main arm and the first connecting trace. Further, the coupler includes a second trace associated with a third port and a fourth port. The second trace includes a second main arm.

Abstract: A coupler is presented that has high-directivity and low coupling coefficient variation. The coupler includes a first trace associated with a first port and a second port. The first port is configured substantially as an input port and the second port is configured substantially as an output port. The coupler further includes a second trace associated with a third port and a fourth port. The third port is configured substantially as a coupled port and the fourth port is configured substantially as an isolated port. In addition, the coupler includes a first capacitor configured to introduce a discontinuity to induce a mismatch in the coupler.

Abstract: According to an exemplary embodiment, a semiconductor die includes a backside surface opposite an active surface. The active surface includes at least one active device. The semiconductor die includes at least one passive device situated on the backside surface. The semiconductor die further includes an interconnect region situated over the active surface. The semiconductor die further includes at least one through-wafer via, where the at least one through-wafer via electrically connects the at least one passive device to the interconnect region. The interconnect region can include a number of solder bump pads or a number of bond pads.

Abstract: A coupler is presented that has high-directivity and low coupling coefficient variation. The coupler includes a first trace associated with a first port and a second port. The first trace includes a first main arm, a first connecting trace connecting the first main arm to the second port, and a non-zero angle between the first main arm and the first connecting trace. Further, the coupler includes a second trace associated with a third port and a fourth port. The second trace includes a second main arm.

Abstract: A coupler is presented that has high-directivity and low coupling coefficient variation. The coupler includes a first trace associated with a first port and a second port. The first port is configured substantially as an input port and the second port is configured substantially as an output port. The coupler further includes a second trace associated with a third port and a fourth port. The third port is configured substantially as a coupled port and the fourth port is configured substantially as an isolated port. In addition, the coupler includes a first capacitor configured to introduce a discontinuity to induce a mismatch in the coupler.

Abstract: A filter circuit includes at least one series resonator having a first terminal and a second terminal, where the first and second terminals of the at least one series resonator are coupled to an input and an output of the filter circuit, respectively. The filter circuit further includes at least one shunt resonator having a first terminal and a second terminal, where the first terminal of the at least one shunt resonator is coupled to the input of the filter circuit and the second terminal of the at least one shunt resonator is coupled to ground. A polarity of the first terminal of the at least one series resonator and a polarity of the first terminal of the at least one shunt resonator are selected so as to reduce harmonic signal generation and other types of distortion in the filter circuit.

Abstract: According to an exemplary embodiment, a semiconductor die includes a backside surface opposite an active surface. The active surface includes at least one active device. The semiconductor die includes at least one passive device situated on the backside surface. The semiconductor die further includes an interconnect region situated over the active surface. The semiconductor die further includes at least one through-wafer via, where the at least one through-wafer via electrically connects the at least one passive device to the interconnect region. The interconnect region can include a number of solder bump pads or a number of bond pads.

Abstract: According to an exemplary embodiment, a system-in-package includes at least one semiconductor die situated over a package substrate. The system-in-package further includes a wall structure situated on the at least one semiconductor die. The system-in-package further includes an integrated passive cap situated over the wall structure, where the integrated passive cap includes at least one passive component. The wall structure and the integrated passive cap form an air cavity over the at least one semiconductor die. The system-in-package can further include at least one bond pad situated on a cap substrate. The at least one bond pad on the cap substrate of the integrated passive cap can be electrically connected to a substrate bond pad on the package substrate.

Abstract: A filter circuit includes at least one series resonator having a first terminal and a second terminal, where the first and second terminals of the at least one series resonator are coupled to an input and an output of the filter circuit, respectively. The filter circuit further includes at least one shunt resonator having a first terminal and a second terminal, where the first terminal of the at least one shunt resonator is coupled to the input of the filter circuit and the second terminal of the at least one shunt resonator is coupled to ground. A polarity of the first terminal of the at least one series resonator and a polarity of the first terminal of the at least one shunt resonator are selected so as to reduce harmonic signal generation and other types of distortion in the filter circuit.

Abstract: A linearizer particularly valuable for millimeter wave satellite communications is disclosed. A satellite (12) divides signal into linear (20) and nonlinear (32) paths which are converted to finline. A pair of beamlead PIN diodes (48) and a pair of varactor diodes (52) extend across the finline linear path to constitute an attenuator and phase shifter. A pair of anti-parallel Schottky diodes (60) and a pair of PIN diodes (64) extend across the nonlinear path to constitute a limiter and an attenuator. A combiner (30) combines the linear and nonlinear signals for input to an amplifier.