Abstract: A bottom bar apparatus for a door curtain includes a bottom bar mountable on a lower end of the curtain and two bar connectors for slidably connecting opposite ends of the bar to guide members mounted along sides of the door opening. The apparatus includes two pivot mechanisms each joining a respective one of the bar connectors to a respective end of the bar. Each mechanism includes a pivot shaft and a shaft receiver into which the shaft extends. One of the shaft and the receiver is connected to a respective one of the bar connectors and the other is mounted on the bottom bar. At least one stop device is arranged to limit pivotal movement of the bar and each is mounted on one of the group consisting of the pivot mechanism and the bar connector. Pivotal movement of the shaft is restricted when the curtain is subject to windload.

Abstract: A bottom bar apparatus for a door curtain includes a bottom bar mountable on a lower end of the curtain and two bar connectors for slidably connecting opposite ends of the bar to guide members mounted along sides of the door opening. The apparatus includes two pivot mechanisms each joining a respective one of the bar connectors to a respective end of the bar. Each mechanism includes a pivot shaft and a shaft receiver into which the shaft extends. One of the shaft and the receiver is connected to a respective one of the bar connectors and the other is mounted on the bottom bar. At least one stop device is arranged to limit pivotal movement of the bar and each is mounted on one of the group consisting of the pivot mechanism and the bar connector. Pivotal movement of the shaft is restricted when the curtain is subject to windload.

Abstract: A method and apparatus is used to determine the thickness of a layer deposited on a specimen. For example, the thickness of a layer of polycrystalline may be measured as it is deposited over silicon oxide on a silicon wafer. The intensity of radiation emission at the top of the silicon wafer is detected. The temperature of the silicon wafer is measured and the variation in the intensity of radiation emission due to variation of the temperature is subtracted from the intensity of radiation emission detected at the top of the silicon wafer. The resultant signal is used to calculate the thickness of the polycrystalline silicon layer.

Abstract: A thermal reactor for epitaxial deposition on a wafer comprises a double-dome vessel and dual heat sources. Each heat source comprises inner and outer circular arrays of infrared lamps. Circumferential heating uniformity is assured by the cylindrical symmetry of the vessel and the heating sources. Radial heating uniformity is provided by independent control of inner and outer heating arrays for both the top and bottom heat sources. The relative temperatures of wafer and susceptor are controlled by adjusting relative energies provided by the upper and lower heat sources so that backside migration. Reduced pressure operation is provided for by the convex top and bottom domes. Due to the provided control over transmitted energy distribution, a susceptor can have low thermal mass so that elevated temperature can be achieved more quickly and cooling can be facilitated as well. This improves throughput and reduces manufacturing costs per wafer. Reagent gas introduction can be axial or radial as desired.

Abstract: An apparatus is described for processing semiconductor wafers for the construction of integrated circuit structures thereon wherein a semiconductor wafer is supported on the upper surface of a uniformly heated susceptor. The apparatus comprises a chamber, a circular susceptor in the chamber for supporting a semiconductor wafer thereon, heating means in the chamber beneath the susceptor, and support means for peripherally supporting the susceptor in the chamber comprising 3-6 spokes which are each connected at one end to a central hub which is coaxial with the axis of the circular susceptor, but spaced therefrom to permit even thermal distribution across the susceptor, and opposite ends of the spokes peripherally supporting the susceptor adjacent the end edges thereof, to permit uniform heating of the susceptor by the heating means and uniform thermal distribution of the heat through the susceptor.