Patents by Inventor Russell Chin Yee Teo
Russell Chin Yee Teo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20240111075Abstract: Embodiments described herein relate to flat optical devices with a coating layer including monolayers selected from the group consisting of molybdenum disulfide (MoS2), tungsten disulfide (WS2), tungsten diselenide (WSe2), molybdenum diselenide (MoSe2), molybdenum ditelluride (MoTe2), titanium disulfide (TlS2), zirconium disulfide (ZrS2), zirconium diselenide (ZrSe2), hafnium disulfide (HfS2), platinum disulfide (PtS2), tin disulfide (SnS2), or combinations thereof. The coating layer is disposed over a plurality of optical device structures of the optical device. The monolayers may alternate between the materials to form the coating layer or may be a uniform coating layer of a single material. The coating layer is disposed over each optical device structure of the plurality of optical device structures.Type: ApplicationFiled: January 31, 2022Publication date: April 4, 2024Inventors: Russell Chin Yee TEO, James CONNOLLY, Chien-An CHEN, Andrew CEBALLOS, Jing JIANG, Jhenghan YANG, Yongan XU
-
Publication number: 20240001398Abstract: A method of forming a substrate carrier is provided. The method includes forming a first electrode over a first surface of a substrate, the first electrode arranged in a first pattern including a plurality of segments, wherein portions of the plurality of segments are spaced apart from each other by a plurality of gaps; and dispensing a plurality of droplets of a dielectric material over the substrate and into the plurality of gaps. The plurality of droplets includes a first droplet and a second droplet, the first droplet is dispensed onto a first location over the substrate, the second droplet is dispensed onto a second location over the substrate, a size of the first droplet is at least 10% larger than a size of the second droplet.Type: ApplicationFiled: June 19, 2023Publication date: January 4, 2024Inventors: Russell Chin Yee TEO, Yingdong LUO, Ludovic GODET, Daihua ZHANG, Zhengping YAO, James D. STRASSNER
-
Patent number: 11846836Abstract: An electro-optical waveguide modulator device includes a seed layer on a substrate, the seed layer having a first crystallographic plane aligned with a surface of the seed layer, an electro-optical channel extending in a first direction on the seed layer and having a second crystallographic plane aligned with the surface of the seed layer, an insulator layer on both sides of the electro-optical channel on the substrate in a second direction perpendicular to the first direction, an electrode barrier layer on the electro-optical channel and the insulator layer, and one or more of electrodes extending in the second direction. The seed layer and the insulator layer each comprise material having a refractive index that is lower than the electro-optical channel.Type: GrantFiled: May 3, 2021Date of Patent: December 19, 2023Assignee: Applied Materials, Inc.Inventors: Russell Chin Yee Teo, Ludovic Godet, Nir Yahav, Robert Jan Visser
-
Patent number: 11638376Abstract: Electronic devices and methods of forming electronic devices using a reduced number of hardmask materials and reusing lithography reticles are described. Patterned substrates are formed using a combination of etch selective hardmask materials and reusing reticles to provide a pattern of repeating trapezoidal and rhomboidal openings.Type: GrantFiled: March 4, 2022Date of Patent: April 25, 2023Assignee: Applied Materials, Inc.Inventor: Russell Chin Yee Teo
-
Publication number: 20220262801Abstract: Embodiments of the present disclosure generally relate to methods of forming a capacitor for DRAM. The method begins by preparing a substrate for forming the capacitor. A bottom electrode is formed on the top surface of the substrate. A dielectric layer is formed in contact with the bottom electrode. The material of the dielectric layer is one of a barium titanate, BaTiO3 (BTO) strontium titanate, SrTiO3 (STO), barium strontium titanate, BaSrTiO3 (BSTO), ZrSTO, ZrBTO, or ZrBSTO. A top electrode is formed on the dielectric layer and then a cap is formed on the top electrode.Type: ApplicationFiled: February 3, 2022Publication date: August 18, 2022Inventor: Russell Chin Yee TEO
-
Publication number: 20220189965Abstract: Electronic devices and methods of forming electronic devices using a reduced number of hardmask materials and reusing lithography reticles are described. Patterned substrates are formed using a combination of etch selective hardmask materials and reusing reticles to provide a pattern of repeating trapezoidal and rhomboidal openings.Type: ApplicationFiled: March 4, 2022Publication date: June 16, 2022Applicant: Applied Materials, Inc.Inventor: Russell Chin Yee Teo
-
Patent number: 11302699Abstract: Electronic devices and methods of forming electronic devices using a reduced number of hardmask materials and reusing lithography reticles are described. Patterned substrates are formed using a combination of etch selective hardmask materials and reusing reticles to provide a pattern of repeating trapezoidal and rhomboidal openings.Type: GrantFiled: May 7, 2020Date of Patent: April 12, 2022Assignee: Applied Materials, Inc.Inventor: Russell Chin Yee Teo
-
Publication number: 20220020599Abstract: Exemplary processing methods may include depositing a boron-containing material or a silicon-and-boron-containing material on a substrate disposed within a processing region of a semiconductor processing chamber. The methods may include etching portions of the boron-containing material or the silicon-and-boron-containing material with a chlorine-containing precursor to form one or more features in the substrate. The methods may also include removing remaining portions of the boron-containing material or the silicon-and-boron-containing material from the substrate with a fluorine-containing precursor.Type: ApplicationFiled: July 18, 2021Publication date: January 20, 2022Applicant: Applied Materials, Inc.Inventors: Takehito Koshizawa, Karthik Janakiraman, Rui Cheng, Krishna Nittala, Menghui Li, Ming-Yuan Chuang, Susumu Shinohara, Juan Guo, Xiawan Yang, Russell Chin Yee Teo, Zihui Li, Chia-Ling Kao, Qu Jin, Anchuan Wang
-
Publication number: 20220011471Abstract: Embodiments described herein relate to encapsulated optical devices and methods of forming optical devices with controllable air-gapped encapsulation. In one embodiment, a plurality of openings are formed in a support layer surrounding the plurality of optical device structures to create a high refractive index contrast between the optical device structures, the support layer, and the openings. In another embodiment, sacrificial material is disposed in-between the optical device structures and then an encapsulation layer is disposed on the optical device structures. The sacrificial material is removed, forming a space bounded by the encapsulation layer, the substrate, and each of the optical device structures. In yet another embodiment, the encapsulation layer is disposed over the optical device structures forming a space bounded by the encapsulation layer, the substrate, and each of the optical device structures.Type: ApplicationFiled: June 22, 2021Publication date: January 13, 2022Inventors: Sage Toko Garrett DOSHAY, Kenichi OHNO, Rutger MEYER TIMMERMAN THIJSSEN, Russell Chin Yee TEO, Jinrui GUO
-
Publication number: 20210405399Abstract: An electro-optical waveguide modulator device includes a seed layer on a substrate, the seed layer having a first crystallographic plane aligned with a surface of the seed layer, an electro-optical channel extending in a first direction on the seed layer and having a second crystallographic plane aligned with the surface of the seed layer, an insulator layer on both sides of the electro-optical channel on the substrate in a second direction perpendicular to the first direction, an electrode barrier layer on the electro-optical channel and the insulator layer, and one or more of electrodes extending in the second direction. The seed layer and the insulator layer each comprise material having a refractive index that is lower than the electro-optical channel.Type: ApplicationFiled: May 3, 2021Publication date: December 30, 2021Inventors: Russell Chin Yee TEO, Ludovic GODET, Nir YAHAV, Robert Jan VISSER
-
Publication number: 20210320106Abstract: Memory devices and methods of forming memory devices are described. Specifically, dynamic random-access memory (DRAM) devices are provided with a capacitor landing pad able to connect a 6f2 layout to a 4f2 layout. In some embodiments, the capacitor landing pad has a plurality of air gaps.Type: ApplicationFiled: March 23, 2021Publication date: October 14, 2021Applicant: Applied Materials, Inc.Inventor: Russell Chin Yee Teo
-
Patent number: 11133152Abstract: Methods and apparatus for inspecting features on a substrate including exposing at least a portion of the substrate to a first electron beam landing energy to obtain a first image; exposing the at least a portion of the substrate to a second electron beam landing energy to obtain a second image, wherein the second electron beam landing energy is different from the first electron beam landing energy; realigning the first image and the second image to a feature on the substrate; and determining from at least one measurement from the first image associated with the feature and at least one measurement from the second image associated with the feature if the feature is leaning or twisting.Type: GrantFiled: December 11, 2019Date of Patent: September 28, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Regina Freed, Russell Chin Yee Teo, Madhur Sachan
-
Patent number: 11024746Abstract: Gate all-around devices are disclosed in which an angled channel comprising a semiconducting nanostructure is located between a source and a drain. The angled channel has an axis that is oriented at an angle to the top surface of the substrate at an angle in a range of about 1° to less than about 90°. The gate all-around device is intended to meet design and performance criteria for the 7 nm technology generation.Type: GrantFiled: March 13, 2020Date of Patent: June 1, 2021Assignee: Applied Materrials, Inc.Inventors: Russell Chin Yee Teo, Benjamin Colombeau
-
Publication number: 20200373309Abstract: Electronic devices and methods of forming electronic devices using a reduced number of hardmask materials and reusing lithography reticles are described. Patterned substrates are formed using a combination of etch selective hardmask materials and reusing reticles to provide a pattern of repeating trapezoidal and rhomboidal openings.Type: ApplicationFiled: May 7, 2020Publication date: November 26, 2020Applicant: Applied Materials, Inc.Inventor: Russell Chin Yee Teo
-
Publication number: 20200300618Abstract: Methods and apparatus for inspecting features on a substrate including exposing at least a portion of the substrate to a first electron beam landing energy to obtain a first image; exposing the at least a portion of the substrate to a second electron beam landing energy to obtain a second image, wherein the second electron beam landing energy is different from the first electron beam landing energy; realigning the first image and the second image to a feature on the substrate; and determining from at least one measurement from the first image associated with the feature and at least one measurement from the second image associated with the feature if the feature is leaning or twisting.Type: ApplicationFiled: December 11, 2019Publication date: September 24, 2020Inventors: REGINA FREED, RUSSELL CHIN YEE TEO, MADHUR SACHAN
-
Publication number: 20200220026Abstract: Gate all-around devices are disclosed in which an angled channel comprising a semiconducting nanostructure is located between a source and a drain. The angled channel has an axis that is oriented at an angle to the top surface of the substrate at an angle in a range of about 1° to less than about 90°. The gate all-around device is intended to meet design and performance criteria for the 7 nm technology generation.Type: ApplicationFiled: March 13, 2020Publication date: July 9, 2020Inventors: Russell Chin Yee Teo, Benjamin Colombeau
-
Patent number: 10629752Abstract: Gate all-around devices are disclosed in which an angled channel including a semiconducting nanostructure is located between a source and a drain. The angled channel has an axis that is oriented at an angle to the top surface of the substrate at an angle in a range of about 1° to less than about 90°. The gate all-around device is intended to meet design and performance criteria for the 7 nm technology generation.Type: GrantFiled: October 11, 2018Date of Patent: April 21, 2020Assignee: Applied Materials, Inc.Inventors: Russell Chin Yee Teo, Benjamin Colombeau
-
Publication number: 20200119203Abstract: Gate all-around devices are disclosed in which an angled channel including a semiconducting nanostructure is located between a source and a drain. The angled channel has an axis that is oriented at an angle to the top surface of the substrate at an angle in a range of about 1° to less than about 90°. The gate all-around device is intended to meet design and performance criteria for the 7 nm technology generation.Type: ApplicationFiled: October 11, 2018Publication date: April 16, 2020Inventors: Russell Chin Yee Teo, Benjamin Colombeau