Abstract: Measurement of the extinction coefficient k is employed for effective and prompt in-line monitoring and/or controlling of the metal film composition. The dependency of the extinction coefficient on the composition of a metal compound is characterized by measuring the extinction coefficients of a series of the metal compound with different compositions. A monitor metal film is then deposited on a wafer. The extinction coefficient k of the film on the wafer is measured and a film compositional parameter is extracted. The wafer processing may continue if k is in specification or the needed compositional change in the film may be extracted from the measured value of the k and the established dependence of k on the composition of the film for out-of-spec k values.

Abstract: Measurement of the extinction coefficient k is employed for effective and prompt in-line monitoring and/or controlling of the metal film composition. The dependency of the extinction coefficient on the composition of a metal compound is characterized by measuring the extinction coefficients of a series of the metal compound with different compositions. A monitor metal film is then deposited on a wafer. The extinction coefficient k of the film on the wafer is measured and a film compositional parameter is extracted. The wafer processing may continue if k is in specification or the needed compositional change in the film may be extracted from the measured value of the k and the established dependence of k on the composition of the film for out-of-spec k values.

Abstract: A method of fabricating a magnetic tunnel junction (MTJ) device is provided. A patterned hard mask is oxidized to form a surface oxide thereon. An MTJ stack is etched in alignment with the patterned hard mask after the oxidizing of the patterned hard mask. Preferably, the MTJ stack etch recipe includes chlorine and oxygen. Etch selectivity between the hard mask and the MTJ stack is improved.

Abstract: A method of producing a smooth surface for a film of refractory metallic material is realized by placing a substrate in a CVD reactor; initiating deposition of a layer of two phase material via concurrent introduction into the CVD reactor of a precursor gas and molecular oxygen, the latter at a pressure between about 1.times.10.sup.-6 and 1.times.10.sup.-4 ; and annealing the treated layer at the deposition temperature.