Abstract: Systems and apparatus enhance transmission of electromagnetic energy through a sub-wavelength aperture. A metal film has an input surface and an output surface and forms the sub-wavelength aperture between the input and output surfaces, a first plurality of grooves on the input surface, and a cavity around the sub-wavelength aperture. The width of the cavity determines a resonant wavelength of electromagnetic energy transmitted through the sub-wavelength aperture. The patterned metal film provides plasmon coupling of electromagnetic energy incident upon the input surface transmit electromagnetic energy through the sub-wavelength aperture.

Abstract: A surface-plasmon electric field sensor has a plasmonic portion having an electro-optic dielectric material coated on one side with a transparent conductive layer and on another side with a thin layer of conductive metallic layer. The metallic layer has alternating grating and smooth regions, the smooth regions being of length near a multiple of an effective wavelength of the light in the electro-optic layer, and the grating regions having lines on a pitch near the effective wavelength. The sensor has a light source for illuminating the plasmonic portion with plane-polarized light having a free-space wavelength and a photodetector.

Abstract: Systems and apparatus enhance transmission of electromagnetic energy through a sub-wavelength aperture. A metal film has an input surface and an output surface and forms the sub-wavelength aperture between the input and output surfaces, a first plurality of grooves on the input surface, and a cavity around the sub-wavelength aperture. The width of the cavity determines a resonant wavelength of electromagnetic energy transmitted through the sub-wavelength aperture. The patterned metal film provides plasmon coupling of electromagnetic energy incident upon the input surface transmit electromagnetic energy through the sub-wavelength aperture.

Abstract: A plasmon enhanced near-field optical probe has an optical coupler with an end face and a metal coating forming at least one plasmon enhancement structure. An extension provides probe-to-sample separation feedback. A microscope cantilever has a lever arm with an aperture, a tip to provide tip-to-sample separation feedback, and a plasmon enhancement structure. An air bearing slider apparatus has a base, air bearing slider pads, and a metal film forming a plasmon enhancement structure about an aperture. A plasmon enhanced optical probe end cap has a socket with an entry aperture for an optical fiber and an exit aperture with a plasmon enhanced transmission structure. A positioning subsystem has a piezoelectric member that adjusts a length of the positioning subsystem, and a quadranted piezo device that adjusts a position of the positioning subsystem.

Abstract: A near-field scanning optical microscope system exposes photoresist on a substrate. The system includes an NSOM probe, and translational stages capable of moving one of the probe and the substrate such that the probe traverses, in continuous motion, over the entire substrate. Another near-field scanning optical microscope system exposes photoresist on a substrate using an array of NSOM probes. Methods for exposing photoresist on a substrate include the steps of translating a surface of the substrate across an NSOM probe (or an array of NSOM probes) in continuous motion.

Abstract: A method of using amorphous silicon as a photoresist is disclosed herein. The photoresist is produced by first forming a thin film including at least an outermost layer which includes hydrogenated amorphous silicon onto a suitable surface. Predetermined areas of the outermost layer are then exposed to ultraviolet light. Following exposure, the unexposed areas of the outermost layer, along with any underlying associated portions of the film, are removed so as to reveal the surface in areas which underlie the unexposed outermost layer areas. In a first feature, the outermost layer is formed at a temperature no greater than about 100.degree. C. In a second feature, the predetermined areas of the outermost layer are exposed to ultraviolet light at a temperature no greater than about 100.degree. C. In a third feature, the film is formed entirely from hydrogenated amorphous silicon.