Abstract: An apparatus and a method for converting linear motion to rotary motion are provided. In some embodiments, the apparatus may include a plate having a plurality of connection points and a channel. The apparatus may also include a wobbler having an end that extends along the first axis and a cylindrical body having a second axis that is offset from the first axis by a first angle. The plate may be rotatably connected to the cylindrical body and configured to rotate about the second axis. The apparatus may further include a plurality of flexure assemblies connected to the plurality of connection points of the plate.

Abstract: An apparatus and a method for converting linear motion to rotary motion are provided. In some embodiments, the apparatus may include a plate having a plurality of connection points and a channel. The apparatus may also include a wobbler having an end that extends along the first axis and a cylindrical body having a second axis that is offset from the first axis by a first angle. The plate may be rotatably connected to the cylindrical body and configured to rotate about the second axis. The apparatus may further include a plurality of flexure assemblies connected to the plurality of connection points of the plate.

Abstract: The following description pertains to flexure structures, apparatuses comprising flexure structures, systems comprising flexure structures, methods of using flexure structures, methods of using apparatuses comprising flexure structures, and methods of using systems comprising flexure structures. The following description also pertains to methods, systems, and apparatuses for linear to rotary motion converters.

Abstract: Methods of depositing thin film materials having crystalline content are provided. The methods use plasma enhanced chemical vapor deposition. According to one embodiment of the present invention, microcrystalline silicon films are obtained. According to a second embodiment of the present invention, crystalline films of zinc oxide are obtained. According to a third embodiment of the present invention, crystalline films of iron oxide are obtained.

Abstract: Methods of depositing thin film materials having crystalline content are provided. The methods use plasma enhanced chemical vapor deposition. According to one embodiment of the present invention, microcrystalline silicon films are obtained. According to a second embodiment of the present invention, crystalline films of zinc oxide are obtained. According to a third embodiment of the present invention, crystalline films of iron oxide are obtained.

Abstract: Methods of depositing thin film materials having crystalline content are provided. The methods use plasma enhanced chemical vapor deposition. According to one embodiment of the present invention, microcrystalline silicon films are obtained. According to a second embodiment of the present invention, crystalline films of zinc oxide are obtained. According to a third embodiment of the present invention, crystalline films of iron oxide are obtained.

Abstract: Methods of depositing thin film materials having crystalline content are provided. The methods use plasma enhanced chemical vapor deposition. According to one embodiment of the present invention, microcrystalline silicon films are obtained. According to a second embodiment of the present invention, crystalline films of zinc oxide are obtained. According to a third embodiment of the present invention, crystalline films of iron oxide are obtained.

Abstract: Plasma processing is carried out at pressures of about atmospheric pressure, at pressures below atmospheric pressure, or at pressures above atmospheric pressure. The plasmas are generated using a RF power source and a rectangular waveguide. The plasmas can be used for applications such as materials processing and carrying out chemical reactions.

Abstract: Described are methods and apparatus for coupling RF power. In one embodiment, the method includes the step of flowing an RF current through an RF induction coil having a sufficiently large surface area and a low profile that results in effective RF power coupling to the load. Preferably, the turns of the coil comprise sheets of metal and the coil turns are substantially parallel to each other. Another aspect of the present invention is an apparatus for carrying out processes that use RF power.

Abstract: A variable frequency RF power delivery system is used with a control system that adjusts the output frequency of the RF power delivery system. Frequency adjustments are made so as to maintain the required input current and input voltage within the capabilities of the input current and input voltage source.

Abstract: Plasma processing is carried out at pressures of about atmospheric pressure, at pressures below atmospheric pressure, or at pressures above atmospheric pressure. The plasmas are generated using a RF power source and a rectangular waveguide. The plasmas can be used for applications such as materials processing and carrying out chemical reactions.

Abstract: RF power is delivered to a load in an RF power processor for carrying out process operations. The RF power delivery is performed using a variable frequency RF power amplifier and a control system. The control system maintains RF power delivery using control signals derived from reference RF signals used by the RF power amplifier and measurements of a characteristic of the RF power. The magnitude of the delivered RF power is controlled using measurements of the power input to the RF power amplifier.

Abstract: Plasma processing is carried out in an apparatus having improved stability and reliability for plasma ignition. The improved plasma ignition characteristics result from a modified RF induction coil. One or more nonresonant sections have been added to the RF power induction coil. The nonresonant sections generate enhanced electric fields for igniting the plasma.

Abstract: The invention relates to an improved sputter target that is a combination sputter target and induction antenna. In one embodiment, when the sputter target is energized sputter material particles are sputtered away from the sputter target and a plasma is induced. In another embodiment, the sputter target is energized by an energy source. In yet another embodiment, the energy source includes a bias power supply and an induction power supply. The bias power supply applies a potential to the sputter target relative to an object. The induction power supply applies a current to the sputter target. The potential and the current promote the sputtering away of the sputter target, the formation of the plasma and the anisotropic distribution of the sputtered material particles.

Abstract: The reliability of a plasma processing chamber has been increased using a heat moderating material to facilitate controlling heat removal from dielectric parts of the plasma chamber. The heat moderating material performs at least one of the functions: moderating heat transfer rate and functioning as a heat spreader. The heat moderating material allows removal of heat from the dielectric so that the dielectric maintains temperatures that result in negligible corrosion to the dielectric and the dielectric maintains temperature gradients that minimize thermal stress induced breakage of the dielectric.

Abstract: An arrangement and method for matching a load and a power source, such as an r.f. power source for a vacuum plasma processing chamber, includes a match network coupled between the power source and the load. The match network has at least two controllably variable electrical characteristics. A sensor is provided that senses at least two parameters of the load. A drive controller responds to the sensed parameters of the load to independently control varying a first one of the electrical characteristics of the match network as a function of only one of the parameters of the load, and a second one of the electrical characteristics of the match network as a function of another one of the parameters of the load. This is done until the power source and the load are in a matched condition. The separation of the match variables to establish a nearly one-to-one correspondence with the load parameters allows independent adjustment of the match variables to provide fast and unambiguous reaching of the matched condition.