Abstract: A Group III-V semiconductor device and a method of fabricating the same including an in-situ surface passivation layer. A two-stage cleaning process may be effectuated for cleaning a reactor chamber prior to growing one or more epitaxial layers and forming subsequent surface passivation layers, wherein a first cleaning process may involve a remotely generated plasma containing fluorine-based reactive species for removing SiXNY residual material accumulated in the reactor chamber and/or over any components disposed therein.

Abstract: A computer implemented system for a vertical farming system comprising at least a first crop growth module and operating in an environmentally-controlled growing chamber, the control system comprising sensors for measuring environmental growing conditions in the environmentally-controlled growing chamber over time to generate environmental condition data, a device configured for measuring a crop characteristic of a crop grown in the crop growth module of the environmentally-controlled growing chamber to generate crop growth data and a processing device comprising software modules for receiving the environmental condition data and the crop growth data; applying an algorithm to the environmental condition data and the crop growth data to generate an improved environmental growing condition and generating instructions for adjustment of the environmental growing conditions in or around the growth module in the environmentally-controlled growing chamber to the improved environmental growing condition.

Abstract: A plant growing system configured for high density crop growth and yield, including an environmentally-controlled growing chamber and a vertical growth column within, the column configured to support a hydroponic plant growth module which is configured for containing and supporting plant growth media for containing and supporting a root structure of at least one gravitropic crop plant growing therein and for detachably mounting to the vertical growth column, the hydroponic plant growth module including a lateral growth opening to allow the plant to grow laterally through toward a light emitting source, a nutrient supply system to direct aqueous crop nutrient solution through an upper opening of the hydroponic plant growth module, an airflow source to direct airflow away from the growth opening and through an under-canopy of the plant, so as to disturb the boundary layer, and a control system for regulating, at least one growing condition in an area in or adjacent to the under-canopy.

Abstract: A multi-stage, plant growing system is configured for high density growth and crop yields and includes among other things, towers or vertical growth columns, an enclosed controlled environmental growth chamber, interchangeable growth modules, and control systems capable of machine learning wherein the crops are optimally spaced and continually staged in their planting cycles utilizing special growth modules to provide an accelerated and continuous annual production yield.

Abstract: A plant growing system configured for high density crop growth and yield, including an environmentally-controlled growing chamber and a vertical growth column within, the column configured to support a hydroponic plant growth module which is configured for containing and supporting plant growth media for containing and supporting a root structure of at least one gravitropic crop plant growing therein and for detachably mounting to the vertical growth column, the hydroponic plant growth module including a lateral growth opening to allow the plant to grow laterally through toward a light emitting source, a nutrient supply system to direct aqueous crop nutrient solution through an upper opening of the hydroponic plant growth module, an airflow source to direct airflow away from the growth opening and through an under-canopy of the plant, so as to disturb the boundary layer, and a control system for regulating, at least one growing condition in an area in or adjacent to the under-canopy.

Abstract: A computer implemented system for a vertical farming system comprising at least a first crop growth module and operating in an environmentally-controlled growing chamber, the control system comprising sensors for measuring environmental growing conditions in the environmentally-controlled growing chamber over time to generate environmental condition data, a device configured for measuring a crop characteristic of a crop grown in the crop growth module of the environmentally-controlled growing chamber to generate crop growth data and a processing device comprising software modules for receiving the environmental condition data and the crop growth data; applying an algorithm to the environmental condition data and the crop growth data to generate an improved environmental growing condition and generating instructions for adjustment of the environmental growing conditions in or around the growth module in the environmentally-controlled growing chamber to the improved environmental growing condition.

Abstract: A trench is formed in a low K dielectric (100) over a plurality of vias (120) also formed in the low K dielectric layer (100). The vias are separated by a distance of less than XV and the edge of the trench is greater than XTO from the edge ? of the via closest to the edge of the trench. The trench and vias are subsequently filled with copper (150, 160) to form the interconnect line.

Abstract: A trench is formed in a low K dielectric (100) over a plurality of vias (120) also formed in the low K dielectric layer (100). The vias are separated by a distance of less than XV and the edge of the trench is greater than XTO from the edge ? of the via closest to the edge of the trench. The trench and vias are subsequently filled with copper (150), (160) to form the interconnect line.

Abstract: A trench is formed in a low K dielectric (100) over a plurality of vias (120) also formed in the low K dielectric layer (100). The vias are separated by a distance of less than XV and the edge of the trench is greater than XTO from the edge ? of the via closest to the edge of the trench. The trench and vias are subsequently filled with copper (150), (160) to form the interconnect line.