Abstract: A microelectronic device is hermetically sealed at the wafer level. A substrate is provided having associated electronics and at least one metal bonding pad. A dielectric layer, such as pyrex glass film, is sputter deposited atop the substrate to form a glass/metal seal. A glass film is thereafter planarized, preferably by chemical-mechanical polishing, to remove surface variations. A cover wafer is thereafter anodically bonded to the dielectric layer/glass film so as to define a sealed cavity for housing and protecting the substrate electronics. The resultant microelectronic device is packaged in its own hermetically sealed container at the wafer level.

Abstract: A microelectronic device is hermetically sealed at the wafer level. A substrate is provided having associated electronics and at least one metal bonding pad. A dielectric layer, such as pyrex glass film, is sputter deposited atop the substrate to form a glass/metal seal. A glass film is thereafter planarized, preferably by chemical-mechanical polishing, to remove surface variations. A cover wafer is thereafter anodically bonded to the dielectric layer/glass film so as to define a sealed cavity for housing and protecting the substrate electronics. The resultant microelectronic device is packaged in its own hermetically sealed container at the wafer level.

Abstract: A method for making pressure sensors is disclosed. A wafer of doped silicon or other semiconductive material is selectively chemically etched (micromachined) on both sides to form a plurality of diaphragms, a thicker silicon rim surrounding each diaphragm, and a feedthrough hole corresponding to each diaphragm external to the silicon rim. A small metallized area of the upper surface of the silicon substrate on the rim adjacent each diaphragm permits external electrical connection to the silicon plate. Capacitor plates are formed by depositing a metallized film or other conductive material on a dielectric substrate in locations corresponding to the diaphragms of the silicon wafer. To permit external electrical connection to the conductive material, contact pads electrically connected to the conductive material are formed on the dielectric substrate external to the area corresponding to the diaphragms.

Abstract: A planar magnetic transducer uses thin film technology to form a coil on a ceramic substrate. A relatively powerful magnet is positioned adjacent the substrate so a changing magnetic reluctance adjacent to the coil can be detected by a voltage change at the coil.

Abstract: A method for manufacturing variable capacitance pressure transducers and an intermediate article of manufacture produced in the practice of this method. In the method, a wafer of doped silicion or other semiconductor material has portions of the semiconductor material removed from spaced areas to form a plurality of recesses in the surface of the semiconductor material. The material is doped to enhance its electrical conductivity. A dielectric material has one of its surfaces coated with spaced areas of electrically conductive material. The semiconductor material is attached to the coated surface of the dielectric material such that the surface recesses in the semiconductor material are in alignment with the conductive areas on the dielectric material. This produces a plurality of electrical capacitors suitable for use as pressure transducers.

Abstract: A capacitive pressure transducer assembly having a semiconductor transducer device, a substrate, and a cover for use in conducting a fluid pressure to be sensed to the exterior surfaces of the transducer device. The transducer device may have a glass, silicon or other nonconductive material as a base on which a metal capacitor plate is formed. The other capacitor plate may be formed of doped silicon or other semiconductor material. Also, the substrate on which the transducer device is mounted may have additional and related circuitry implemented in thick film technology (ceramic substrate) or integrated circuit technology (semiconductor substrate).

Abstract: A method for manufacturing variable capacitance pressure transducers and an intermediate article of manufacture produced in the practice of this method. In the method, a wafer or doped silicon or other semiconductor material has portions of the semiconductor material removed from spaced areas to form a plurality of recesses in the surface of the semiconductor material. The material is doped to enhance its electrical conductivity. A dielectric material has one of its surfaces coated with spaces areas of electrically conductive material. The semiconductor material is attached to the coated surface of the dielectric material such that the surface recesses in the semiconductor material are in alignment with the conductive areas on the dielectric material. This produces a plurality of electrical capacitors suitable for use as pressure transducers.