Patents by Inventor Russell Ormond

Russell Ormond has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180065274
    Abstract: A method for forming a ceramic object from a ceramic powder is provided. The ceramic powder is placed in a press. Pressure is applied to the ceramic powder with a pressure to cause consolidation of the ceramic powder. Ultrasonic energy is applied to the ceramic powder for at least a period of time during the applying pressure to the ceramic powder, forming the ceramic powder into a ceramic object. The applying pressure to the ceramic powder is ended.
    Type: Application
    Filed: September 2, 2016
    Publication date: March 8, 2018
    Inventors: William CHARLES, Thomas STEVENSON, Nash ANDERSON, Russell ORMOND, Michael LOPEZ
  • Patent number: 9790582
    Abstract: In accordance with this disclosure, there are provided several inventions, including a substrate processing apparatus with multi-layer surfaces configured to face the plasma and resist against corrosion. These multi-layer surfaces may in one example include a base layer of aluminum, anodized aluminum, or quartz, a second layer of stabilized zirconia, and a second layer of a yttrium-aluminum composite such as yttrium aluminum garnet (YAG).
    Type: Grant
    Filed: April 27, 2015
    Date of Patent: October 17, 2017
    Assignee: Lam Research Corporation
    Inventors: Chin-Yi Liu, Russell Ormond, Nash W. Anderson, David M. Schaefer
  • Patent number: 9546432
    Abstract: A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component.
    Type: Grant
    Filed: August 4, 2015
    Date of Patent: January 17, 2017
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Hong Shih, Lin Xu, John Michael Kerns, William Charles, John Daugherty, Sivakami Ramanathan, Russell Ormond, Robert G. O'Neill, Tom Stevenson
  • Publication number: 20160312351
    Abstract: In accordance with this disclosure, there are provided several inventions, including a substrate processing apparatus with multi-layer surfaces configured to face the plasma and resist against corrosion. These multi-layer surfaces may in one example include a base layer of aluminum, anodized aluminum, or quartz, a second layer of stabilized zirconia, and a second layer of a yttrium-aluminum composite such as yttrium aluminum garnet (YAG).
    Type: Application
    Filed: April 27, 2015
    Publication date: October 27, 2016
    Inventors: Chin-Yi LIU, Russell ORMOND, Nash W. ANDERSON, David M. SCHAEFER
  • Publication number: 20150337450
    Abstract: A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component.
    Type: Application
    Filed: August 4, 2015
    Publication date: November 26, 2015
    Applicant: LAM RESEARCH CORPORATION
    Inventors: Hong SHIH, Lin XU, John Michael KERNS, William CHARLES, John DAUGHERTY, Sivakami RAMANATHAN, Russell ORMOND, Robert G. O'NEILL, Tom STEVENSON
  • Patent number: 9123651
    Abstract: A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component.
    Type: Grant
    Filed: March 27, 2013
    Date of Patent: September 1, 2015
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Hong Shih, Lin Xu, John Michael Kerns, William Charles, John Daugherty, Sivakami Ramanathan, Russell Ormond, Robert G. O'Neill, Tom Stevenson
  • Publication number: 20140295670
    Abstract: A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component.
    Type: Application
    Filed: March 27, 2013
    Publication date: October 2, 2014
    Applicant: Lam Research Corporation
    Inventors: Hong Shih, Lin Xu, John Michael Kerns, William Charles, John Daugherty, Sivakami Ramanathan, Russell Ormond, Robert G. O'Neill, Tom Stevenson