Abstract: A commercial cooking equipment exhaust hood system includes a hood structure including an inlet opening to an exhaust flow path through the hood. A filter unit is positioned along the exhaust flow path. An electrostatic precipitator unit is downstream of the filter unit. The electrostatic precipitator includes an ionizing section upstream of a collecting section. The ionizing section includes a plurality of ionizing flow paths having side profile patterns that vary in width between at least one wide section and at least one narrow section. The collecting section includes a plurality of collecting flow paths with side profile patterns of substantially uniform width and a repeating undulating side profile pattern. A UV light source may also be provided within the hood, with a controller operatively connected to control the UV light source via a dimmer to enable selective production various UV levels.

Abstract: A semiconductor device includes a fin structure including a recess formed in an upper surface of the fin structure, an inner gate formed in the recess of the fin structure, and an outer gate formed outside and around the fin structure.

Abstract: A semiconductor device including a fin structure including a recess, a first gate formed in the recess of the fin structure, and a second gate formed outside the fin structure.

Abstract: A commercial cooking equipment exhaust hood system includes a hood structure including an inlet opening to an exhaust flow path through the hood. A filter unit is positioned along the exhaust flow path. An electrostatic precipitator unit is downstream of the filter unit. The electrostatic precipitator includes an ionizing section upstream of a collecting section. The ionizing section includes a plurality of ionizing flow paths having side profile patterns that vary in width between at least one wide section and at least one narrow section. The collecting section includes a plurality of collecting flow paths with side profile patterns of substantially uniform width and a repeating undulating side profile pattern. A UV light source may also be provided within the hood, with a controller operatively connected to control the UV light source via a dimmer to enable selective production various UV levels.

Abstract: A commercial cooking equipment exhaust hood system includes a hood structure including an inlet opening to an exhaust flow path through the hood. A filter unit is positioned along the exhaust flow path. An electrostatic precipitator unit is downstream of the filter unit. The electrostatic precipitator includes an ionizing section upstream of a collecting section. The ionizing section includes a plurality of ionizing flow paths having side profile patterns that vary in width between at least one wide section and at least one narrow section. The collecting section includes a plurality of collecting flow paths with side profile patterns of substantially uniform width and a repeating undulating side profile pattern. A UV light source may also be provided within the hood, with a controller operatively connected to control the UV light source via a dimmer to enable selective production various UV levels.

Abstract: A semiconductor device including a fin structure including a recess, a first gate formed in the recess of the fin structure, and a second gate formed outside the fin structure.

Abstract: A semiconductor device includes a fin structure including a cylindrical shape, an inner gate formed inside the fin structure, and an outer gate formed outside the fin structure and connected to the inner gate.

Abstract: A semiconductor device includes a fin structure including a recess formed in an upper surface of the fin structure, an inner gate formed in the recess of the fin structure, and an outer gate formed outside and around the fin structure.

Abstract: A semiconductor device includes a fin structure having a circular cylindrical shape, and including a first recess formed on a first side of the fin structure and a second recess formed on a second side of the fin structure opposite the first side, an inner gate formed inside the fin structure, and an inner gate insulating layer formed between the inner gate and an inner surface of the fin structure.

Abstract: A method and a semiconductor device includes a substrate, and a first device type formed on the substrate, the first device type including an active channel region including a first fin, the first fin including a first fin width which is narrower than a second fin width above and below the active channel region. A second device type can be formed on the same substrate, the second device type includes a second active channel region including a second fin, the second fin including a first fin width which is the same as the second fin width both above and below the second active channel region.

Abstract: A commercial cooking equipment exhaust hood system includes a hood structure including an inlet opening to an exhaust flow path through the hood. A filter unit is positioned along the exhaust flow path. An electrostatic precipitator unit is downstream of the filter unit. The electrostatic precipitator includes an ionizing section upstream of a collecting section. The ionizing section includes a plurality of ionizing flow paths having side profile patterns that vary in width between at least one wide section and at least one narrow section. The collecting section includes a plurality of collecting flow paths with side profile patterns of substantially uniform width and a repeating undulating side profile pattern. A UV light source may also be provided within the hood, with a controller operatively connected to control the UV light source via a dimmer to enable selective production various UV levels.

Abstract: A commercial cooking equipment exhaust hood system includes a hood structure including an inlet opening to an exhaust flow path through the hood. A filter unit is positioned along the exhaust flow path. An electrostatic precipitator unit is downstream of the filter unit. The electrostatic precipitator includes an ionizing section upstream of a collecting section. The ionizing section includes a plurality of ionizing flow paths having side profile patterns that vary in width between at least one wide section and at least one narrow section. The collecting section includes a plurality of collecting flow paths with side profile patterns of substantially uniform width and a repeating undulating side profile pattern. A UV light source may also be provided within the hood, with a controller operatively connected to control the UV light source via a dimmer to enable selective production various UV levels.

Abstract: A semiconductor device includes a fin structure including a cylindrical shape, an inner gate formed inside the fin structure, and an outer gate formed outside the fin structure and connected to the inner gate.

Abstract: A semiconductor device includes a fin structure having a circular cylindrical shape, and including a first recess formed on a first side of the fin structure and a second recess formed on a second side of the fin structure opposite the first side, an inner gate formed inside the fin structure, and an inner gate insulating layer formed between the inner gate and an inner surface of the fin structure.

Abstract: A semiconductor device includes a fin structure including a cylindrical shape, an inner gate formed inside the fin structure, and an outer gate formed outside the fin structure and connected to the inner gate.

Abstract: A commercial cooking equipment exhaust hood system includes a hood structure including an inlet opening to an exhaust flow path through the hood. A filter unit is positioned along the exhaust flow path. An electrostatic precipitator unit is downstream of the filter unit. The electrostatic precipitator includes an ionizing section upstream of a collecting section. The ionizing section includes a plurality of ionizing flow paths having side profile patterns that vary in width between at least one wide section and at least one narrow section. The collecting section includes a plurality of collecting flow paths with side profile patterns of substantially uniform width and a repeating undulating side profile pattern. A UV light source may also be provided within the hood, with a controller operatively connected to control the UV light source via a dimmer to enable selective production various UV levels.

Abstract: A semiconductor device includes a fin structure including a cylindrical shape, an inner gate formed inside the fin structure, and an outer gate formed outside the fin structure and connected to the inner gate.

Abstract: Controlling an exhaust hood system having multiple hood sections each with an exhaust output having an associated damper, each exhaust output feeding to a common downstream fan, where damper position and fan speed control an exhaust flow rate through each hood section, involves monitoring at least one condition of each hood section and, based upon the monitoring, establishing a target flow rate for each hood section; based upon a sum of the target flow rates, establishing a fan speed; and monitoring an actual flow rate through each hood section and responsively controlling damper position to achieve the target flow rate for the hood section. Adjusting fan speed and damper position until damper position for at least one hood section achieves a predetermined open position, while at the same time each hood section satisfies its associated target flow rate, can reduce energy costs associated with system operation.

Abstract: A semiconductor device includes a fin structure comprising a cylindrical shape and including a recess formed in an upper surface of the fin structure, an inner gate formed inside the fin structure, an outer gate formed outside the fin structure, and a conductor formed in the recess and connecting the inner and outer gates.

Abstract: A method and a semiconductor device includes a substrate, and a first device type formed on the substrate, the first device type including an active channel region including a first fin, the first fin including a first fin width which is narrower than a second fin width above and below the active channel region. A second device type can be formed on the same substrate, the second device type includes a second active channel region including a second fin, the second fin including a first fin width which is the same as the second fin width both above and below the second active channel region.