Abstract: A sputtering cathode is generally provided. The sputtering cathode can include a semiconducting target (e.g., a cadmium sulfide target, a cadmium tin oxide target, etc.) defining a sputtering surface and a back surface opposite to the sputtering surface. A backing plate can be positioned facing the back surface of the target and non-bonded to the back surface of the target. A non-bonding attachment mechanism can removably hold the target within the sputtering cathode such that the back surface is facing the backing plate during sputtering.

Abstract: A rotary sputtering cathode, including a tubular member having a length in a longitudinal direction and defining an external surface, a first longitudinal bracket extending in the longitudinal direction along the length of the tubular member, and a second longitudinal bracket extending in the longitudinal direction along the length of the tubular member, is provided. Additional longitudinal brackets (e.g., a third, fourth, fifth, and so forth,) may also be included along the length of the tubular member. A target, which comprises a sputtering material, can be positioned such that its back surface is facing the external surface of the tubular member. The first longitudinal bracket and the second longitudinal bracket removably hold the first target therebetween such that the first back surface of the first target is facing the external surface of the tubular member. Methods are also provided for sputtering a non-bonded target.

Abstract: A slit valve assembly is configured for attachment to a vacuum chamber module to seal a slot opening in a wall of the module in a closed position and to provide access through the slot opening in an open position. The valve assembly includes a rotatable shaft driven by a rotary actuator between an open rotational position and a closed rotational position. An elongated seal plate seals against the module wall over the slot opening in the closed rotational position of the shaft. At least one arm member connects the seal plate with the shaft. The arm member rotates with the shaft and is pivotally attached to the seal plate. The seal plate is biased to an articulated position relative to the arm member.

Abstract: Apparatus and processes for sequential sputtering deposition of a target source material as a thin film on a photovoltaic module substrate are provided. The apparatus includes a first sputtering deposition chamber and a second sputtering deposition chamber that are integrally connected such that the substrates being transported through the apparatus are kept at a system pressure that is less than about 760 Torr. The load vacuum chamber is connected to a load vacuum pump configured to reduce the pressure within the load vacuum chamber to an initial load pressure. The first sputtering deposition chamber includes a first target, and the second sputtering deposition chamber includes a second target. A conveyor system is operably disposed within the apparatus and configured for transporting substrates in a serial arrangement into and through load vacuum chamber, into and through the first sputtering deposition chamber, and into and through the second sputtering deposition chamber at a controlled speed.

Abstract: An apparatus and process for vapor deposition of a sublimated source material as a thin film on a photovoltaic module substrate are provided. The apparatus includes at least one receptacle disposed in a deposition head. Each receptacle is configured for receipt of a granular source material. A heating system is configured to heat the receptacle(s) to sublimate the source material. A substantially vertical distribution plate is disposed between the receptacle(s) and a substrate conveyed through the apparatus. The distribution plate is positioned at a defined distance from a vertical conveyance plane of a deposition surface of the substrate. The distribution plate comprises a pattern of passages therethrough that distribute the sublimated source material for deposition onto the deposition surface of the substrate.

Abstract: Methods for forming a TCO layer on a substrate are generally provided and include sputtering a TCO layer on a substrate from a target including cadmium stannate. A cap material (e.g., including cadmium) is deposited onto an outer surface of an indirect anneal system, and the TCO layer can be annealed at an anneal temperature while in contact with or within about 10 cm of the cap material. An anneal oven is also generally provided and includes an indirect anneal system defining a deposition surface and an anneal surface such that a cap material deposited on the anneal surface of the indirect anneal system is positioned to be in contact with or within about 10 cm of a thin film on the substrate. A cap material source can be positioned to deposit the cap material onto the deposition surface such that the anneal surface comprises the cap material.

Abstract: A vacuum chamber structure includes a rotary feedthrough configured on a chamber wall to provide rotational drive to the interior of the structure. The rotary feedthrough includes a gearbox having a housing and a shaft rotationally supported by bearings contained within the housing. A motor is operably coupled to the gearbox housing to drive the shaft, which extends from the gearbox. A seal assembly is operably disposed between the gearbox housing and the chamber wall, with the shaft disposed through the seal assembly and extending through a bore in the chamber wall and into the interior of the structure. The shaft is rotationally supported with bearings only via the bearings in the gearbox housing.

Abstract: An apparatus and related process are provided for vapor deposition of a sublimated source material as a thin film on a photovoltaic (PV) module substrate. A deposition head is configured for sublimating a source material supplied thereto. The sublimated source material condenses onto a transport conveyor disposed below the deposition head. A substrate conveyor is disposed below the transport conveyor and conveys substrates in a conveyance path through the apparatus such that an upper surface of the substrates is opposite from and spaced below a lower leg of the transport conveyor. A heat source is configured adjacent the lower leg of the transport conveyor. The source material plated onto the transport conveyor is sublimated along the lower leg and condenses onto to the upper surface of substrates conveyed by the substrate conveyor.

Abstract: A system and related method for deposition of multiple thin film layers on photovoltaic (PV) module substrates includes a first processing side wherein the substrates are conveyed in a first direction for deposition of a first thin film layer on the substrates. A second processing side is operably disposed relative to the first processing side such that substrates exiting the first processing side are subsequently conveyed in a second direction through the second processing side for deposition of a second thin film layer on the first thin film layer. A first transfer station is operably disposed between the first processing side and the second processing side to receive the substrates from an exit of the first processing side and to introduce the substrates into an entry of the second processing side such that the substrates are continuously moved through the first and second processing sides for deposition of multiple thin film layers thereon.

Abstract: Methods are generally provided for sputtering thin films on individual substrates. Individual substrates can be conveyed into a vacuum chamber to draw a sputtering pressure that is less than about 50 mTorr. Then, the individual substrates can be conveyed into a sputtering chamber and past a planar magnetron continuously sputtering a target by an ionized gas at the sputtering pressure such that a thin film is formed on a surface of the individual substrate. The target is subjected to a high frequency power having a frequency from about 400 kHz to about 4 MHz at power levels of greater than about 1 kW. In one particular embodiment, the method can be generally directed to sputtering thin films on individual substrates defining a surface having a surface area of about 1000 cm2 to about 2500 cm2.

Abstract: An apparatus and associated method of operation is provided for vapor deposition of a sublimated source material, such as CdTe, as a thin film on discrete photovoltaic (PV) module substrates that are conveyed in a continuous, non-stop manner through the apparatus. The apparatus includes a deposition head configured for receipt and sublimation of the source material. The deposition head has a distribution plate at a defined distance above a horizontal conveyance plane of an upper surface of the substrates conveyed through a deposition area within the apparatus. The sublimated source material moves through the distribution plate and deposits onto the upper surface of the substrates as they are conveyed through the deposition area. The substrates move into and out of the deposition area through entry and exit slots that are defined by transversely extending entrance and exit seals.

Abstract: A system for vapor deposition of a thin film layer on photovoltaic (PV) module substrates includes a system for cool-down of the vacuum chamber through which substrates are conveyed in a vapor deposition process. The cool-down system is configured with the vacuum chamber to recirculate a cooling gas through the vacuum chamber and through an external heat exchanger in a closed cool-down loop. An associated method for forced cool-down of the vacuum chamber is also provided.

Abstract: A system and associated process for vapor deposition of a thin film layer on a photovoltaic (PV) module substrate is includes establishing a vacuum chamber and introducing the substrates individually into the vacuum chamber. A conveyor system is operably disposed within the vacuum chamber and is configured for conveying the substrates in a serial arrangement through a vapor deposition apparatus within the vacuum chamber at a controlled constant linear speed. A post-heat section is disposed within the vacuum chamber immediately downstream of the vapor deposition apparatus in the conveyance direction of the substrates. The post-heat section is configured to maintain the substrates conveyed from the vapor deposition apparatus in a desired heated temperature profile until the entire substrate has exited the vapor deposition apparatus.

Abstract: A process and associated system for vapor deposition of a thin film layer on a photovoltaic (PV) module substrate is includes establishing a vacuum chamber and introducing the substrates individually into the vacuum chamber. The substrates are pre-heated as they are conveyed through the vacuum chamber, and are then conveyed in serial arrangement through a vapor deposition apparatus in the vacuum chamber wherein a thin film of a sublimed source material is deposited onto an upper surface of the substrates. The substrates are conveyed through the vapor deposition apparatus at a controlled constant linear speed such that leading and trailing sections of the substrate in a conveyance direction are exposed to the same vapor deposition conditions within the vapor deposition apparatus. The vapor deposition apparatus may be supplied with source material in a manner so as not to interrupt the vapor deposition process or non-stop conveyance of the substrates through the vapor deposition apparatus.

Abstract: An apparatus and related process are provided for vapor deposition of a sublimated source material as a thin film on a photovoltaic (PV) module substrate. A receptacle is disposed within a vacuum head chamber and is configured for receipt of a source material. A heated distribution manifold is disposed below the receptacle and includes a plurality of passages defined therethrough. The receptacle is indirectly heated by the distribution manifold to a degree sufficient to sublimate source material within the receptacle. A distribution plate is disposed below the distribution manifold and at a defined distance above a horizontal plane of a substrate conveyed through the apparatus. The distribution plate includes a pattern of holes therethrough that further distribute the sublimated source material passing through the distribution manifold onto the upper surface of the underlying substrate.

Abstract: A conveyor assembly for use in a vapor deposition apparatus includes a housing defining an enclosed interior volume. A conveyor is driven in an endless loop path within the housing. The housing has a top member that defines an open deposition area in an upper conveyance leg of the conveyor. The conveyor includes a plurality of interconnected slats, with each slat having a respective flat, planar outer surface and transverse edge profiles such that, in the upper conveyance leg of the conveyor, the outer surfaces of the slats lie in a common horizontal plane and define an uninterrupted flat support surface for a substrate conveyed through the vapor deposition apparatus.

Abstract: An active viewport assembly for use in detecting substrates conveyed through a vapor deposition system includes a casing configured for mounting to a wall of a vapor deposition module. The casing further includes an enclosed chamber, an exterior side port, and an interior side port. A lens assembly is disposed within the chamber and extends through the interior side port. A heater element is configured on the lens assembly within the chamber. One of an active transmitter or an active signal receiver is configured with the exterior side port external of the chamber and is axially aligned with and spaced from the lens assembly.