Abstract: The present invention provides a method for an improved protective coating for plasma dicing a substrate. A work piece having a support film, a frame and the substrate, the substrate having a top surface and a bottom surface, the top surface of the substrate having a plurality of device structures and a plurality of street areas is provided. The work piece is formed by adhering the substrate to a support film and then mounting the substrate with the support film to a frame. A composite material coating having a matrix component and a filler component is applied to the top surface of the substrate. The filler component has a plurality of particles. The composite material coating is removed from at least one street area to expose the street area. The exposed street area is plasma etched. The composite material coating is removed from the top surface of the substrate.

Abstract: The present invention provides a method for plasma dicing a substrate. The method comprising a process chamber having a wall with a plasma source adjacent to the wall of the process chamber is provided. A work piece support and a cover plate are positioned within the process chamber. A work piece is placed onto the work piece support wherein the work piece has a support film, a frame and the substrate. A plasma is generated using the plasma source. Residual material is etched from an edge of the substrate of the work piece using the generated plasma while a majority of an upper surface of the substrate of the work piece is covered by the cover plate.

Abstract: The present disclosure provides several methods for processing a substrate within a shutterless ion beam etching (IBE) system or shutterless ion assist ion beam deposition (IBD) system while preventing electrostatic damage to the substrate. In the IBE, at an etch completion, the ion energy to the ion source is reduced to less than 20 electron volts while at least one of the devices of the plurality of devices on the top surface of the substrate is exposed to a portion of the ion beam. In the IBD, at a deposition ion assist completion, the ion energy from the second ion source is reduced to less than 20 electron volts while at least one of the devices of the plurality of devices on the top surface of the substrate is exposed to the second ion beam.

Abstract: The present disclosure provides a method of processing a substrate within an ion beam system. The substrate has a top surface that has a plurality of features, an edge and a bottom surface. The substrate is placed on a wafer stage and an energetic particle beam having a radial flux distribution over at least a portion of a major dimension thereof is ignited. The energetic particle beam is stabilized while the bottom surface of the substrate is oriented toward the major dimension of the energetic particle beam. The wafer stage with the substrate is oriented so that the top surface of the substrate is exposed to the major dimension of the energetic particle beam. After stabilization of the energetic particle beam, the plurality of features on the top surface of the substrate are exposed to the energetic particle beam in a treatment zone.

Abstract: The present invention provides a method for using ion filtering to adjust the number of ions delivered to a substrate. The method comprising a process chamber being provided that is operatively connected to a plasma source. The substrate is provided on a substrate support that is provided within the process chamber. An electrical bias source is provided that is operatively connected to an aperture plate that is provided in the process chamber. The substrate on the substrate support is processed using a plasma generated using the plasma source. A variable bias voltage from the electrical bias source is applied to the aperture plate during the plasma processing of the substrate. The plasma processing of the substrate can further comprise exposing the substrate to a plasma time division multiplex process which alternates between deposition and etching on the substrate.

Abstract: The present invention provides a method for plasma dicing a substrate. The substrate is placed onto a support film on a frame to form a work piece. A die attach film is adhered to the substrate. A process chamber having a plasma source is provided. The work piece is placed into the process chamber. A plasma is generated from the plasma source in the plasma process chamber. The work piece is processed using the generated plasma and a byproduct generated from the die attach film while the die attach film is exposed to the generated plasma.

Abstract: The present invention provides a method for plasma dicing a substrate. The substrate is provided with a top surface and a bottom surface, the top surface of the substrate having a plurality of street areas and at least one device structure. The substrate is placed onto a support film on a frame to form a work piece. A process chamber having a plasma source is provided. A work piece support is provided within the plasma process chamber. The work piece is placed onto the work piece support. A plasma is generated from the plasma source in the plasma process chamber. The work piece is processed using the generated plasma and a byproduct generated from the support film while the support film is exposed to the generated plasma.

Abstract: The present invention provides a method for an improved protective coating for plasma dicing a substrate. A work piece having a support film, a frame and the substrate, the substrate having a top surface and a bottom surface, the top surface of the substrate having a plurality of device structures and a plurality of street areas is provided. The work piece is formed by adhering the substrate to a support film and then mounting the substrate with the support film to a frame. A composite material coating having a matrix component and a filler component is applied to the top surface of the substrate. The filler component has a plurality of particles. The composite material coating is removed from at least one street area to expose the street area. The exposed street area is plasma etched. The composite material coating is removed from the top surface of the substrate.

Abstract: The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a clamping electrode for electrostatically clamping the work piece to the work piece support; providing a mechanical partition between the plasma source and the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.

Abstract: The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a clamping electrode for electrostatically clamping the work piece to the work piece support; providing a mechanical partition between the plasma source and the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.

Abstract: The present invention provides an improved plasma source configuration comprising a vacuum chamber having the source. A dielectric member is in communication with the vacuum chamber and surrounded by the plasma source. A high aspect ratio gap is formed between a film breaker and the dielectric member.

Abstract: The present invention provides a method for dicing a substrate on a composite film. A work piece having a support film, a frame and a substrate is provided. The substrate has a top surface and a bottom surface. The top surface of the substrate has at least one die region and at least one street region. The composite film is interposed between the substrate and the support film. Substrate material is etched from the at least one street region to expose a portion of the composite film using a substrate etch process. A first component of the composite film is etched using a first etch process. A second component of the exposed portion of the composite film is plasma etched using a second etch process.

Abstract: The present invention provides a method for plasma dicing a substrate. The substrate is provided with a top surface and a bottom surface, the top surface of the substrate having a plurality of street areas and at least one device structure. The substrate is placed onto a support film on a frame to form a work piece. A process chamber having a plasma source is provided. A work piece support is provided within the plasma process chamber. The work piece is placed onto the work piece support. A plasma is generated from the plasma source in the plasma process chamber. The work piece is processed using the generated plasma and a byproduct generated from the support film while the support film is exposed to the generated plasma.

Abstract: The present invention provides a method for plasma dicing a substrate. The substrate is provided with a top surface and a bottom surface, the top surface of the substrate having a plurality of street areas and at least one device structure. The substrate is placed onto a support film on a frame to form a work piece. A process chamber having a plasma source is provided. A work piece support is provided within the plasma process chamber. The work piece is placed onto the work piece support. A plasma is generated from the plasma source in the plasma process chamber. The work piece is processed using the generated plasma and a byproduct generated from the support film while the support film is exposed to the generated plasma.

Abstract: The present invention provides a method for using ion filtering to adjust the number of ions delivered to a substrate. The method comprising a process chamber being provided that is operatively connected to a plasma source. The substrate is provided on a substrate support that is provided within the process chamber. An electrical bias source is provided that is operatively connected to an aperture plate that is provided in the process chamber. The substrate on the substrate support is processed using a plasma generated using the plasma source. A variable bias voltage from the electrical bias source is applied to the aperture plate during the plasma processing of the substrate. The plasma processing of the substrate can further comprise exposing the substrate to a plasma time division multiplex process which alternates between deposition and etching on the substrate.

Abstract: The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a clamping electrode for electrostatically clamping the work piece to the work piece support; providing a mechanical partition between the plasma source and the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.

Abstract: The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a cover ring disposed above the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.

Abstract: The present invention provides a method for dicing a substrate on a composite film. A work piece having a support film, a frame and a substrate is provided. The substrate has a top surface and a bottom surface. The top surface of the substrate has at least one die region and at least one street region. The composite film is interposed between the substrate and the support film. Substrate material is etched from the at least one street region to expose a portion of the composite film using a substrate etch process. A first component of the composite film is etched using a first etch process. A second component of the exposed portion of the composite film is plasma etched using a second etch process.

Abstract: The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a clamping electrode for electrostatically clamping the work piece to the work piece support; providing a mechanical partition between the plasma source and the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.

Abstract: The present invention provides a method for dicing a substrate on a composite film. The method comprising the provision of a work piece having a support film, a frame and a substrate. The substrate has a top surface and a bottom surface. The top surface of the substrate has at least one die region and at least one street region. The composite film is adhered to the substrate and to the support film. Substrate material is removed from the at least one street region to expose a portion of the composite film. The exposed composite film is removed from the at least one street region. A first component of the exposed portion of the composite film is plasma etched. A second component of the composite film is removed by applying a force to the composite film.