Patents by Inventor Russelle De Jesus Tabajonda

Russelle De Jesus Tabajonda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11251315
    Abstract: A method of fabricating a solar cell can include forming a dielectric region on a silicon substrate. The method can also include forming an emitter region over the dielectric region and forming a dopant region on a surface of the silicon substrate. In an embodiment, the method can include heating the silicon substrate at a temperature above 900 degrees Celsius to getter impurities to the emitter region and drive dopants from the dopant region to a portion of the silicon substrate.
    Type: Grant
    Filed: May 18, 2020
    Date of Patent: February 15, 2022
    Assignee: SunPower Corporation
    Inventors: David D. Smith, Tim Dennis, Russelle De Jesus Tabajonda
  • Publication number: 20210043782
    Abstract: A method of fabricating a solar cell can include forming a dielectric region on a silicon substrate. The method can also include forming an emitter region over the dielectric region and forming a dopant region on a surface of the silicon substrate. In an embodiment, the method can include heating the silicon substrate at a temperature above 900 degrees Celsius to getter impurities to the emitter region and drive dopants from the dopant region to a portion of the silicon substrate.
    Type: Application
    Filed: May 18, 2020
    Publication date: February 11, 2021
    Inventors: David D. Smith, Tim Dennis, Russelle De Jesus Tabajonda
  • Patent number: 10658525
    Abstract: A method of fabricating a solar cell can include forming a dielectric region on a silicon substrate. The method can also include forming an emitter region over the dielectric region and forming a dopant region on a surface of the silicon substrate. In an embodiment, the method can include heating the silicon substrate at a temperature above 900 degrees Celsius to getter impurities to the emitter region and drive dopants from the dopant region to a portion of the silicon substrate.
    Type: Grant
    Filed: December 20, 2018
    Date of Patent: May 19, 2020
    Assignee: SunPower Corporation
    Inventors: David D. Smith, Tim Dennis, Russelle De Jesus Tabajonda
  • Publication number: 20190131463
    Abstract: A method of fabricating a solar cell can include forming a dielectric region on a silicon substrate. The method can also include forming an emitter region over the dielectric region and forming a dopant region on a surface of the silicon substrate. In an embodiment, the method can include heating the silicon substrate at a temperature above 900 degrees Celsius to getter impurities to the emitter region and drive dopants from the dopant region to a portion of the silicon substrate.
    Type: Application
    Filed: December 20, 2018
    Publication date: May 2, 2019
    Inventors: David D. Smith, Tim Dennis, Russelle De Jesus Tabajonda
  • Patent number: 10170642
    Abstract: A method of fabricating a solar cell can include forming a dielectric region on a silicon substrate. The method can also include forming an emitter region over the dielectric region and forming a dopant region on a surface of the silicon substrate. In an embodiment, the method can include heating the silicon substrate at a temperature above 900 degrees Celsius to getter impurities to the emitter region and drive dopants from the dopant region to a portion of the silicon substrate.
    Type: Grant
    Filed: January 22, 2018
    Date of Patent: January 1, 2019
    Assignee: SunPower Corporation
    Inventors: David D. Smith, Tim Dennis, Russelle De Jesus Tabajonda
  • Publication number: 20180219108
    Abstract: A method of fabricating a solar cell can include forming a dielectric region on a silicon substrate. The method can also include forming an emitter region over the dielectric region and forming a dopant region on a surface of the silicon substrate. In an embodiment, the method can include heating the silicon substrate at a temperature above 900 degrees Celsius to getter impurities to the emitter region and drive dopants from the dopant region to a portion of the silicon substrate.
    Type: Application
    Filed: January 22, 2018
    Publication date: August 2, 2018
    Inventors: David D. SMITH, Tim DENNIS, Russelle De Jesus TABAJONDA
  • Patent number: 9899542
    Abstract: A method of fabricating a solar cell can include forming a dielectric region on a silicon substrate. The method can also include forming an emitter region over the dielectric region and forming a dopant region on a surface of the silicon substrate. In an embodiment, the method can include heating the silicon substrate at a temperature above 900 degrees Celsius to getter impurities to the emitter region and drive dopants from the dopant region to a portion of the silicon substrate.
    Type: Grant
    Filed: July 18, 2016
    Date of Patent: February 20, 2018
    Assignee: SunPower Corporation
    Inventors: David D. Smith, Tim Dennis, Russelle De Jesus Tabajonda
  • Patent number: 9520507
    Abstract: A method of fabricating a solar cell can include forming a dielectric region on a silicon substrate. The method can also include forming an emitter region over the dielectric region and forming a dopant region on a surface of the silicon substrate. In an embodiment, the method can include heating the silicon substrate at a temperature above 900 degrees Celsius to getter impurities to the emitter region and drive dopants from the dopant region to a portion of the silicon substrate.
    Type: Grant
    Filed: December 22, 2014
    Date of Patent: December 13, 2016
    Assignee: SunPower Corporation
    Inventors: David D. Smith, Tim Dennis, Russelle De Jesus Tabajonda
  • Publication number: 20160329441
    Abstract: A method of fabricating a solar cell can include forming a dielectric region on a silicon substrate. The method can also include forming an emitter region over the dielectric region and forming a dopant region on a surface of the silicon substrate. In an embodiment, the method can include heating the silicon substrate at a temperature above 900 degrees Celsius to getter impurities to the emitter region and drive dopants from the dopant region to a portion of the silicon substrate.
    Type: Application
    Filed: July 18, 2016
    Publication date: November 10, 2016
    Inventors: David D. Smith, Tim Dennis, Russelle De Jesus Tabajonda
  • Publication number: 20160181444
    Abstract: A method of fabricating a solar cell can include forming a dielectric region on a silicon substrate. The method can also include forming an emitter region over the dielectric region and forming a dopant region on a surface of the silicon substrate. In an embodiment, the method can include heating the silicon substrate at a temperature above 900 degrees Celsius to getter impurities to the emitter region and drive dopants from the dopant region to a portion of the silicon substrate.
    Type: Application
    Filed: December 22, 2014
    Publication date: June 23, 2016
    Inventors: David D. Smith, Tim Dennis, Russelle De Jesus Tabajonda