Abstract: A semiconductor memory employs a variety of circuit elements which are used to manipulate the digital information stored within the rows and columns of the memory array. The circuit elements must be manipulated in an ordered sequence with proper relative timing to permit decoding of various addresses and other circuit commands and enabling of various ones of the circuit elements. The plurality of timing signals are generated within the memory by a corresponding plurality of timing generators. Accurate timing and sequencing is obtained by utilizing the output of one timing generator to trigger or initiate the generation of a signal in another generator followed by either proper conditioning upon an input signal, such as an address, or by a predetermined delay designed into the timing generator itself.

Abstract: A random access memory system employing dynamic storage wherein each cell comprises a single active element. The memory employs MOS technology and is disposed on a silicon substrate. A plurality of sense amplifiers are disposed in a column substantially bisecting each row of memory cells in the memory array. A single input/output line communicates with all the cells. Two dummy cells are employed on each row line on opposite sides of the sense amplifiers. The value of the signal provided by the dummy cell is approximately mid-way between a "0" signal and a "1" signal provided by the storage cells. A plurality of timing signals are generated within the memory; accurate timing is obtained by utilizing the output of one timing generator to trigger or initiate the generation of a signal in another generator.