Abstract: A material composition for manufacturing a translucent conductive film includes a fluid. The material composition further includes nanostructures disposed within the fluid. The material composition further includes a component that modifies a structure of a joint formed between at least two nanostructures of the plurality of nanostructures after the component is activated. The component may be activated by applying heath or optical radiation to the component.

Abstract: A method of depositing nanowire chains includes applying a nanowire mixture to a chain-site. The chain-site includes a patterned conductive film covering at least a portion of a surface of a substrate. The patterned conductive film includes a gap. The method also includes, after applying the nanowire mixture, forming a nanowire chain suspended adjacent to a portion of the patterned conductive film by generating an electric field proximate to the patterned conductive film; and depositing the nanowire chain across the gap by removing a liquid portion of the nanowire mixture. An average length of the nanowires of the nanowire mixture is less than a width of the gap.

Abstract: A material composition for manufacturing a translucent conductive film includes a fluid. The material composition further includes nanostructures disposed within the fluid. The material composition further includes a component that modifies a structure of a joint formed between at least two nanostructures of the plurality of nanostructures after the component is activated. The component may be activated by applying heath or optical radiation to the component.

Abstract: A method of depositing nanowire chains includes applying a nanowire mixture to a chain-site. The chain-site includes a patterned conductive film covering at least a portion of a surface of a substrate. The patterned conductive film includes a gap. The method also includes, after applying the nanowire mixture, forming a nanowire chain suspended adjacent to a portion of the patterned conductive film by generating an electric field proximate to the patterned conductive film; and depositing the nanowire chain across the gap by removing a liquid portion of the nanowire mixture. An average length of the nanowires of the nanowire mixture is less than a width of the gap.

Abstract: A method of depositing nanowires including generating wells disposed on a patterned conductive film. The patterned conductive film includes well-sites. The patterned conducive film covers a portion of a surface of a substrate. Each of the wells is disposed proximate to a corresponding wellsite. The method includes applying a nanowire mixture to the wells and, after applying the nanowire mixture, at least one nanowire is deposited on a first portion and a second portion of the patterned conductive film by generating an electric field proximate to the patterned conductive film. The first portion and the second portion of the patterned conductive film are separated by a gap.