Abstract: A plasma etch process is described for simultaneously removing photoresist and etch residues, such as silicon oxide residues, remaining on a substrate from a prior polysilicon and/or polycide etch. The process comprises: (a) generating radicals in a plasma generator upstream of an etch chamber, from an etch gas mixture comprising (i) oxygen, water vapor, or a mixture of same; and (ii) one or more fluorine-containing etchant gases; and (b) then contacting the substrate containing the photoresist and residues from the previous polysilicon/polycide etch with the generated radicals in the etch chamber to remove both the photoresist and the etch residues during the same etch step.