Abstract: Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum.

Abstract: Apparatus for atomic layer deposition on a surface of a substrate, the apparatus comprising: a deposition member; a substrate table for supporting the substrate; a first reactant injector for supplying a first reactant; a second reactant injector for supplying a second reactant; a gas injector being arranged for creating, by means of gas injected by the gas injector, a gas barrier and optionally being arranged for creating a gas bearing; a heater for heating the gas that is to be injected by the gas injector; and an additional heater for heating the deposition member and the substrate table, and for heating the substrate. The deposition member has a gas inlet for the gas that is to be injected by the gas injector. The heater is provided outside the deposition member. The gas transported from the gas inlet is heated by the heater before said gas enters the gas inlet.