Abstract: A data storage method includes: in response to a stream ID carried by an IO write request of a host satisfying a first preset condition, writing data corresponding to the IO write request into a first storage unit; and in response to the stream ID carried by the IO write request satisfying a second preset condition, writing the data corresponding to the IO write request into a second storage unit, wherein the stream ID indicates write latency requirement information of the data corresponding to the IO write request, wherein a data write latency indicated by the stream ID satisfying the first preset condition is less than the data write latency indicated by the stream ID satisfying the second preset condition, wherein a read and write performance of the first storage unit is higher than the read and write performance of the second storage unit.

Abstract: A method of data storage based on a redundant array of independent disks (RAID), where the RAID includes a plurality of solid state drives (SSD), each SSD including a persistent memory region (PMR) and a NAND, includes writing first data into the NAND, and writing first check data into the PMR. The first check data is check data related to the first data.

Abstract: A data storage method includes: in response to a stream ID carried by an IO write request of a host satisfying a first preset condition, writing data corresponding to the IO write request into a first storage unit; and in response to the stream ID carried by the IO write request satisfying a second preset condition, writing the data corresponding to the IO write request into a second storage unit, wherein the stream ID indicates write latency requirement information of the data corresponding to the IO write request, wherein a data write latency indicated by the stream ID satisfying the first preset condition is less than the data write latency indicated by the stream ID satisfying the second preset condition, wherein a read and write performance of the first storage unit is higher than the read and write performance of the second storage unit.

Abstract: A log-structured merge-tree (LSM-Tree) based key-value (KV) data storage method includes writing KV data into a NAND flash memory. The KV data includes a key-value pair including a key and a corresponding value. The KV data is stored in a key-value solid state drive (KVSSD), which includes a storage class memory (SCM) and the NAND flash memory. The method further includes storing metadata of the KV data in the SCM. The metadata of the KV data includes the key and index information of the corresponding value of the KV data, and the index information of the corresponding value of the KV data indicates address information of the KV data in the NAND flash memory.

Abstract: A log-structured merge-tree (LSM-Tree) based key-value (KV) data storage method includes writing KV data into a NAND flash memory. The KV data includes a key-value pair including a key and a corresponding value. The KV data is stored in a key-value solid state drive (KVSSD), which includes a storage class memory (SCM) and the NAND flash memory. The method further includes storing metadata of the KV data in the SCM. The metadata of the KV data includes the key and index information of the corresponding value of the KV data, and the index information of the corresponding value of the KV data indicates address information of the KV data in the NAND flash memory.

Abstract: A method for fabricating a transparent conductive oxide thin film, the method comprising the following steps: fabricating Ba1-xLaxSnO3 using a solid-phase reaction method to obtain a BLSO magnetron sputtering target material; and fabricating a BLSO thin film by means of direct deposition with argon as a sputtering gas by using a SrTiO3, MgO, LaAlO3, (La,Sr)(Al,Ta)O3(LSAT), MgAl2O4 or Al2O3 single crystal substrate and the BLSO magnetron sputtering target material, such that the transparent conductive oxide thin film is fabricate is provided. During sputtering, the temperature of the substrate is 750° C.-950° C., and the deposition pressure of the Ar gas is 25-77 Pa. The room-temperature mobility of the transparent conductive oxide thin film can reach 115 cm2/V·s, the room-temperature carrier concentration can reach 1.2×1021 cm?3, and the room-temperature conductivity can reach 14,000 S/cm.

Abstract: A data storage method includes: in response to a stream ID carried by an IO write request of a host satisfying a first preset condition, writing data corresponding to the IO write request into a first storage unit; and in response to the stream ID carried by the IO write request satisfying a second preset condition, writing the data corresponding to the IO write request into a second storage unit, wherein the stream ID indicates write latency requirement information of the data corresponding to the IO write request, wherein a data write latency indicated by the stream ID satisfying the first preset condition is less than the data write latency indicated by the stream ID satisfying the second preset condition, wherein a read and write performance of the first storage unit is higher than the read and write performance of the second storage unit.

Abstract: A method for fabricating a transparent conductive oxide thin film, the method comprising the following steps: fabricating Ba1-xLaxSnO3 using a solid-phase reaction method to obtain a BLSO magnetron sputtering target material; and fabricating a BLSO thin film by means of direct deposition with argon as a sputtering gas by using a SrTiO3, MgO, LaAlO3, (La,Sr)(Al,Ta)O3(LSAT), MgAl2O4 or Al2O3 single crystal substrate and the BLSO magnetron sputtering target material, such that the transparent conductive oxide thin film is fabricate is provided. During sputtering, the temperature of the substrate is 750° C.-950° C., and the deposition pressure of the Ar gas is 25-77 Pa. The room-temperature mobility of the transparent conductive oxide thin film can reach 115 cm2/V·s, the room-temperature carrier concentration can reach 1.2×1021 cm?3, and the room-temperature conductivity can reach 14,000 S/cm.

Abstract: A method, an apparatus, a computer storage medium and a computer device for geological characteristic constraint-based reservoir parameter prediction are provided. The method includes: selecting dominant seismic attributes according to the relevance between different types of seismic attributes of a target stratum and reservoir parameters (S100); on the basis of the dominant seismic attributes, classifying seismic waveforms of the target stratum by a preset waveform classification network model and according to waveform features, so as to obtain a waveform classification result (S200); taking the waveform classification result as a constraint, and constructing different deep neural network models corresponding to different geological characteristics (S300); fusing different trained deep neural network models into a set of spatially varying neural network prediction model (S500); and predicting the reservoir parameters of the target stratum.

Abstract: The invention relates to flavanone derivatives, and preparation method and use thereof, particularly relates to a compound of Formula I or a pharmaceutically acceptable salt thereof, a pharmaceutical composition comprising the same, a preparation method thereof, and use thereof for preventing or treating a mental disorder or a nervous system disease. The compound of the invention exerts significant activity of inhibiting microglial activation and neuroinflammation, can antagonize dopamine D2 receptor, improve the ethological change in multiple animal models for mental disorders, effectively inhibit neuroinflammation and demyelination, and can be used to prevent or treat a mental disorder and a nervous system disease.

Abstract: The invention relates to flavanone derivatives, and preparation method and use thereof, particularly relates to a compound of Formula I or a pharmaceutically acceptable salt thereof, a pharmaceutical composition comprising the same, a preparation method thereof, and use thereof for preventing or treating a mental disorder or a nervous system disease. The compound of the invention exerts significant activity of inhibiting microglial activation and neuroinflammation, can antagonize dopamine D2 receptor, improve the ethological change in multiple animal models for mental disorders, effectively inhibit neuroinflammation and demyelination, and can be used to prevent or treat a mental disorder and a nervous system disease.

Abstract: Composition containing iridoids such as morroniside and loganin, the use thereof in preparing medicaments for preventing and treating neurologic demyelinating diseases, and the method thereof in treating diseases related to neurologic demyelinating lesions are disclosed by the present application.

Abstract: New use of icariin and Epimedium flavaoids containing icariin is provided by the present invention.

Abstract: New use of icariin and Epimedium flavaoids containing icariin is provided by the present invention.

Abstract: Composition containing iridoids such as morroniside and loganin, the use thereof in preparing medicaments for preventing and treating neurologic demyelinating diseases, and the method thereof in treating diseases related to neurologic demyelinating lesions are disclosed by the present application.