Patents by Inventor Ryan ARCH

Ryan ARCH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Contact stacks to reduce hydrogen in thin film transistor
    Patent number: 11444205
    Abstract: Embodiments herein describe techniques for a semiconductor device including a substrate and a transistor above the substrate. The transistor includes a channel layer above the substrate, a conductive contact stack above the substrate and in contact with the channel layer, and a gate electrode separated from the channel layer by a gate dielectric layer. The conductive contact stack may be a drain electrode or a source electrode. In detail, the conductive contact stack includes at least a metal layer, and at least a metal sealant layer to reduce hydrogen diffused into the channel layer through the conductive contact stack. Other embodiments may be described and/or claimed.
    Type: Grant
    Filed: September 26, 2018
    Date of Patent: September 13, 2022
    Assignee: Intel Corporatiion
    Inventors: Arnab Sen Gupta, Matthew Metz, Benjamin Chu-Kung, Abhishek Sharma, Van H. Le, Miriam R. Reshotko, Christopher J. Jezewski, Ryan Arch, Ande Kitamura, Jack T. Kavalieros, Seung Hoon Sung, Lawrence Wong, Tahir Ghani
  • CONTACT STACKS TO REDUCE HYDROGEN IN THIN FILM TRANSISTOR
    Publication number: 20200098657
    Abstract: Embodiments herein describe techniques for a semiconductor device including a substrate and a transistor above the substrate. The transistor includes a channel layer above the substrate, a conductive contact stack above the substrate and in contact with the channel layer, and a gate electrode separated from the channel layer by a gate dielectric layer. The conductive contact stack may be a drain electrode or a source electrode. In detail, the conductive contact stack includes at least a metal layer, and at least a metal sealant layer to reduce hydrogen diffused into the channel layer through the conductive contact stack. Other embodiments may be described and/or claimed.
    Type: Application
    Filed: September 26, 2018
    Publication date: March 26, 2020
    Inventors: Arnab SEN GUPTA, Matthew METZ, Benjamin CHU-KUNG, Abhishek SHARMA, Van H. LE, Miriam R. RESHOTKO, Christopher J. JEZEWSKI, Ryan ARCH, Ande KITAMURA, Jack T. KAVALIEROS, Seung Hoon SUNG, Lawrence WONG, Tahir GHANI