Abstract: A gas delivery system includes a 2-port valve including a first valve located between a first port and a second port. A 4-port valve includes a first node connected to a first port and a second port. A bypass path is located between the third port and the fourth port. A second node is located along the bypass path. A second valve is located between the first node and the second node. A manifold block defines gas flow channels configured to connect the first port of the 4-port valve to a first inlet, configured to connect the second port of the 4-port valve to the first port of the 2-port valve, the third port of the 4-port valve to a second inlet, the second port of the 2-port valve to a first outlet, and the fourth port of the 4-port valve to a second outlet.

Abstract: A gas delivery system includes a 2-port valve including a first valve located between a first port and a second port. A 4-port valve includes a first node connected to a first port and a second port. A bypass path is located between the third port and the fourth port. A second node is located along the bypass path. A second valve is located between the first node and the second node. A manifold block defines gas flow channels configured to connect the first port of the 4-port valve to a first inlet, configured to connect the second port of the 4-port valve to the first port of the 2-port valve, the third port of the 4-port valve to a second inlet, the second port of the 2-port valve to a first outlet, and the fourth port of the 4-port valve to a second outlet.

Abstract: A gas delivery system includes a 2-port valve including a first valve located between a first port and a second port. A 4-port valve includes a first node connected to a first port and a second port. A bypass path is located between the third port and the fourth port. A second node is located along the bypass path. A second valve is located between the first node and the second node. A manifold block defines gas flow channels configured to connect the first port of the 4-port valve to a first inlet, configured to connect the second port of the 4-port valve to the first port of the 2-port valve, the third port of the 4-port valve to a second inlet, the second port of the 2-port valve to a first outlet, and the fourth port of the 4-port valve to a second outlet.

Abstract: A processing chamber in a substrate processing system includes an upper surface, sidewalls, and a bottom surface and a showerhead connected to and extending downward from the upper surface of the processing chamber. The showerhead includes a stem portion and a base portion. An inverted conical surface is arranged adjacent to the upper surface and the sidewalls of the processing chamber and includes an angled surface arranged to redirect gas flow above the showerhead from a horizontal direction to a downward direction and into a gap between a radially outer portion of the base portion and the sidewalls of the processing chamber.

Abstract: A process chamber for depositing a film on a wafer is provided, including: a pedestal having, a central top surface having a plurality of wafer supports configured to support the wafer at a support level above the central top surface, an annular surface at a step down from the central top surface; a carrier ring configured to be supported by carrier ring supports such that a bottom surface of the carrier ring is at a first vertical separation above the annular surface, the carrier ring having a step down surface defined relative to a top surface; wherein when the carrier ring is seated on the carrier ring supports, then the step down surface of the carrier ring is positioned at a process level that is at a second vertical separation from the support level over the top surface of the pedestal.

Abstract: A processing chamber in a substrate processing system includes an upper surface, sidewalls, and a bottom surface and a showerhead connected to and extending downward from the upper surface of the processing chamber. The showerhead includes a stem portion and a base portion. An inverted conical surface is arranged adjacent to the upper surface and the sidewalls of the processing chamber and includes an angled surface arranged to redirect gas flow above the showerhead from a horizontal direction to a downward direction and into a gap between a radially outer portion of the base portion and the sidewalls of the processing chamber.

Abstract: A gas delivery system includes a 2-port valve including a first valve located between a first port and a second port. A 4-port valve includes a first node connected to a first port and a second port. A bypass path is located between the third port and the fourth port. A second node is located along the bypass path. A second valve is located between the first node and the second node. A manifold block defines gas flow channels configured to connect the first port of the 4-port valve to a first inlet, configured to connect the second port of the 4-port valve to the first port of the 2-port valve, the third port of the 4-port valve to a second inlet, the second port of the 2-port valve to a first outlet, and the fourth port of the 4-port valve to a second outlet.

Abstract: A substrate processing system includes a processing chamber and a showerhead including a faceplate, a stem portion and a cylindrical base portion. A collar connects the showerhead to a top surface of the processing chamber. The collar defines a gas channel to receive secondary purge gas and a plurality of gas slits to direct the secondary purge gas from the gas channel in a radially outward and downward direction. A conical surface is arranged adjacent to the cylindrical base and around the stem portion of the showerhead. An inverted conical surface is arranged adjacent to a top surface and sidewalls of the processing chamber. The conical surface and the inverted conical surface define an angled gas channel from the plurality of gas slits to a gap defined between a radially outer portion of the cylindrical base portion and the sidewalls of the processing chamber.

Abstract: Pedestal assemblies and methods for using said pedestal assemblies, used in processing chambers implemented for processing substrates are disclosed. In one example, the pedestal assembly includes a center column coupled to a lower chamber body of a processing chamber. A pedestal body is coupled to the center column. The pedestal body includes a substrate support surface and an annular step formed around a circumference of the pedestal body and surrounding the substrate support surface. Further included is a first annular ring segment disposed within the annular step. The first annular ring is defined from a conductive material. A second annular ring segment is also disposed within the annular step. The second annular ring is defined from a dielectric material. The first annular ring and the second annular ring fill the annular step around the circumference of the pedestal body.

Abstract: A substrate processing system includes a processing chamber and a showerhead including a faceplate, a stem portion and a cylindrical base portion. A collar connects the showerhead to a top surface of the processing chamber. The collar defines a gas channel to receive secondary purge gas and a plurality of gas slits to direct the secondary purge gas from the gas channel in a radially outward and downward direction. A conical surface is arranged adjacent to the cylindrical base and around the stem portion of the showerhead. An inverted conical surface is arranged adjacent to a top surface and sidewalls of the processing chamber. The conical surface and the inverted conical surface define an angled gas channel from the plurality of gas slits to a gap defined between a radially outer portion of the cylindrical base portion and the sidewalls of the processing chamber.

Abstract: Pedestal assemblies and methods for using said pedestal assemblies, used in processing chambers implemented for processing substrates are disclosed. In one example, the pedestal assembly includes a center column coupled to a lower chamber body of a processing chamber. A pedestal body is coupled to the center column. The pedestal body includes a substrate support surface and an annular step formed around a circumference of the pedestal body and surrounding the substrate support surface. Further included is a first annular ring segment disposed within the annular step. The first annular ring is defined from a conductive material. A second annular ring segment is also disposed within the annular step. The second annular ring is defined from a dielectric material. The first annular ring and the second annular ring fill the annular step around the circumference of the pedestal body.

Abstract: A process chamber for depositing a film on a wafer is provided, including: a pedestal having, a central top surface having a plurality of wafer supports configured to support the wafer at a support level above the central top surface, an annular surface at a step down from the central top surface; a carrier ring configured to be supported by carrier ring supports such that a bottom surface of the carrier ring is at a first vertical separation above the annular surface, the carrier ring having a step down surface defined relative to a top surface; wherein when the carrier ring is seated on the carrier ring supports, then the step down surface of the carrier ring is positioned at a process level that is at a second vertical separation from the support level over the top surface of the pedestal.