Abstract: The present invention provides methods for cleaning the surface of CMP polishing pads comprising blowing a stream or curtain of forced air or gas from a source onto the surface of a CMP polishing pad substrate at a pressure of from 170 kPa (24.66 psig) to 600 kPa (87 psig), towards a vacuum source, the forced air or gas blowing at an angle of from 6 to 15° from a vertical plane which lies normal to the surface of the substrate, traverses the entire width of the surface of the substrate, and passes through the source of the forced air or gas, while, at the same time conveying along a horizontal plane the CMP polishing pad so that the entire surface of the CMP polishing pad surface is exposed to the forced air or gas at least one time; and, vacuuming the surface of the CMP polishing pad at a point on the surface which is downstream from a point at which the stream curtain of forced air or gas contacts the surface of the CMP polishing pad.

Abstract: The present invention provides methods for cleaning the surface of CMP polishing pads comprising blowing a stream or curtain of forced air or gas from a source onto the surface of a CMP polishing pad substrate at a pressure of from 170 kPa (24.66 psig) to 600 kPa (87 psig), towards a vacuum source, the forced air or gas blowing at an angle of from 6 to 15° from a vertical plane which lies normal to the surface of the substrate, traverses the entire width of the surface of the substrate, and passes through the source of the forced air or gas, while, at the same time conveying along a horizontal plane the CMP polishing pad so that the entire surface of the CMP polishing pad surface is exposed to the forced air or gas at least one time; and, vacuuming the surface of the CMP polishing pad at a point on the surface which is downstream from a point at which the stream curtain of forced air or gas contacts the surface of the CMP polishing pad.