Abstract: A method includes etching a semiconductor substrate to form a semiconductor strip and trenches on opposite sidewalls of the semiconductor strip. A spacer is formed on a sidewall of the semiconductor strip which is used as an etching mask to extend the trenches down into the semiconductor substrate. A dielectric material is filled into the trenches and then planarized to form insulation regions in the trenches. The insulation regions are recessed. After the recessing, top surfaces of the insulation regions are lower than a top surface of the semiconductor strip and a gate structure may be formed thereon.

Abstract: A method for fabricating a fin-type field-effect transistor (FinFET) device includes receiving a precursor. The precursor has a plurality of fins over a substrate and a dielectric layer filling in a space between each of fins and extending above the fins. The method also includes forming a patterned hard mask layer having an opening over the dielectric layer, etching the dielectric layer through the opening to form a trench with vertical profile. A subset of the fins is exposed in the trench. The method also includes performing an isotropic dielectric etch to enlarge the trench in a horizontal direction. The method also includes performing an anisotropic etch to recess the subset of fins in the trench and performing an isotropic fin etch to etch the recessed subset of fins.

Abstract: An integrated circuit structure includes a semiconductor substrate, an insulation region extending into the semiconductor substrate, and a semiconductor strip between two opposite portions of the insulation region. The semiconductor strip includes an upper portion higher than top surfaces of the insulation regions and a lower portion in the insulation region. The lower portion has a sidewall including a first sidewall portion having a first slope and a second sidewall portion over and connected to the first sidewall portion. The second sidewall portion has a second slope smaller than the first slope.

Abstract: A method includes providing a first mask pattern over a substrate, forming first spacers adjoining sidewalls of the first mask pattern, removing the first mask pattern, forming second spacers adjoining sidewalls of the first spacers, forming a filling layer over the substrate and between the second spacers, and forming a second mask pattern over the substrate.

Abstract: Provided are methods of patterning metal gate structures including a high-k gate dielectric. In an embodiment, a soluble hard mask layer may be used to provide a masking element to pattern a metal gate. The soluble hard mask layer may be removed from the substrate by water or a photoresist developer. In an embodiment, a hard mask including a high-k dielectric is formed. In a further embodiment, a protection layer is formed underlying a photoresist pattern. The protection layer may protect one or more layers formed on the substrate from a photoresist stripping process.

Abstract: A method for forming an integrated circuit is provided. The method includes forming a gate dielectric structure over a substrate. A titanium-containing sacrificial layer is formed, contacting the gate dielectric structure. The whole titanium-containing sacrificial layer is substantially removed.

Abstract: A method includes etching a semiconductor substrate to form a recess in the semiconductor substrate, and reacting a surface layer of the semiconductor substrate to generate a reacted layer. The surface layer of the semiconductor substrate is in the recess. The reacted layer is then removed. An epitaxy is performed to grow a semiconductor material in the recess.

Abstract: Embodiments of the present disclosure are a method of forming a semiconductor device and a method of forming a FinFET device. An embodiment is a method of forming a semiconductor device, the method including forming a first dielectric layer over a substrate, forming a first hardmask layer on the first dielectric layer, and patterning the first hardmask layer to form a first hardmask portion with a first width. The method further includes forming a second dielectric layer on the first dielectric layer and the first hardmask portion, forming a third dielectric layer on the second dielectric layer, and etching the third dielectric layer and a portion of the second dielectric layer to form a first and second spacer on opposite sides of the first hardmask portion.

Abstract: Embodiments of the present disclosure are a method of forming a semiconductor device, a method of forming a FinFET device, a FinFET device. An embodiment a method for semiconductor device, the method comprising forming a first dielectric layer over a substrate, forming a first hardmask layer over the first dielectric layer, and patterning the first hardmask layer to form a first hardmask portion with a first width. The method further comprises forming a first raised portion of the first dielectric layer with the first width, wherein the first raised portion is aligned with the first hardmask portion, and forming a first spacer and a second spacer over the first dielectric layer, wherein the first spacer and the second spacer are on opposite sides of the first raised portion, and wherein the sidewalls of the first spacer and the second spacer are substantially orthogonal to the top surface of the substrate.

Abstract: A method includes forming a first gate stack and a second gate stack over a first portion and a second portion, respectively, of a semiconductor substrate, masking the first portion of the semiconductor substrate, and with the first portion of the semiconductor substrate being masked, implanting the second portion of the semiconductor substrate with an etch-tuning element. The first portion and the second portion of the semiconductor substrate are etched simultaneously to form a first opening and a second opening, respectively, in the semiconductor substrate. The method further includes epitaxially growing a first semiconductor region in the first opening, and epitaxially growing a second semiconductor region in the second opening.

Abstract: Provided are methods of patterning metal gate structures including a high-k gate dielectric. In an embodiment, a soluble hard mask layer may be used to provide a masking element to pattern a metal gate. The soluble hard mask layer may be removed from the substrate by water or a photoresist developer. In an embodiment, a hard mask including a high-k dielectric is formed. In a further embodiment, a protection layer is formed underlying a photoresist pattern. The protection layer may protect one or more layers formed on the substrate from a photoresist stripping process.

Abstract: Embodiments of the present disclosure are a method of forming a semiconductor device, a method of forming a FinFET device, a FinFET device. An embodiment a method for semiconductor device, the method comprising forming a first dielectric layer over a substrate, forming a first hardmask layer over the first dielectric layer, and patterning the first hardmask layer to form a first hardmask portion with a first width. The method further comprises forming a first raised portion of the first dielectric layer with the first width, wherein the first raised portion is aligned with the first hardmask portion, and forming a first spacer and a second spacer over the first dielectric layer, wherein the first spacer and the second spacer are on opposite sides of the first raised portion, and wherein the sidewalls of the first spacer and the second spacer are substantially orthogonal to the top surface of the substrate.

Abstract: A method for fabricating a device is disclosed. An exemplary method includes providing a substrate and forming a plurality of fins over the substrate. The method further includes forming a first opening in the substrate in a first longitudinal direction. The method further includes forming a second opening in the substrate in a second longitudinal direction. The first and second longitudinal directions are different. The method further includes depositing a filling material in the first and second openings.

Abstract: A metal-oxide-semiconductor (MOS) device having a selectable threshold voltage determined by the composition of an etching solution contacting a metal layer. The MOS device can be either a p-type or n-type MOS and the threshold voltage is selectable for both types of MOS devices. The etching solution is either an oxygen-containing solution or a fluoride-containing solution. The threshold voltage is selected by adjusting the flow rate of inert gases into an etching chamber to control the concentration of oxygen gas or nitrogen trifluoride.

Abstract: A method for cleaning an etching chamber is disclosed. The method comprises providing an etching chamber; introducing a first gas comprising an inert gas into the etching chamber for a first period of time; and transporting a first wafer into the etching chamber after the first period of time, wherein the first wafer undergoes an etching process.

Abstract: Embodiments of the present disclosure are a method of forming a semiconductor device and a method of forming a FinFET device. An embodiment is a method of forming a semiconductor device, the method including forming a first dielectric layer over a substrate, forming a first hardmask layer on the first dielectric layer, and patterning the first hardmask layer to form a first hardmask portion with a first width. The method further includes forming a second dielectric layer on the first dielectric layer and the first hardmask portion, forming a third dielectric layer on the second dielectric layer, and etching the third dielectric layer and a portion of the second dielectric layer to form a first and second spacer on opposite sides of the first hardmask portion.

Abstract: A method of fabricating a spacer structure which includes forming a dummy gate structure comprising a top surface and sidewall surfaces over a substrate and forming a spacer structure over the sidewall surfaces. Forming the spacer structure includes depositing a first oxygen-sealing layer on the dummy gate structure and removing a portion of the first oxygen-sealing layer on the top surface of the dummy gate structure, whereby the first oxygen-sealing layer remains on the sidewall surfaces. Forming the spacer structure further includes depositing an oxygen-containing layer on the first oxygen-sealing layer and the top surface of the dummy gate structure. Forming the spacer structure further includes depositing a second oxygen-sealing layer on the oxygen-containing layer and removing a portion of the second oxygen-sealing layer over the top surface of the dummy gate structure. Forming the spacer structure further includes thinning the second oxygen-sealing layer.

Abstract: A method of fabricating a semiconductor device includes providing a semiconductor substrate having a first active region and a second active region, forming a first metal layer over a high-k dielectric layer, removing at least a portion of the first metal layer in the second active region, forming a second metal layer on first metal layer in the first active region and over the high-k dielectric layer in the second active region, and thereafter, forming a silicon layer over the second metal layer. The method further includes removing the silicon layer from the first gate stack thereby forming a first trench and from the second gate stack thereby forming a second trench, and forming a third metal layer over the second metal layer in the first trench and over the second metal layer in the second trench.

Abstract: A method includes etching a semiconductor substrate to form a recess in the semiconductor substrate, and reacting a surface layer of the semiconductor substrate to generate a reacted layer. The surface layer of the semiconductor substrate is in the recess. The reacted layer is then removed. An epitaxy is performed to grow a semiconductor material in the recess.

Abstract: Embodiments of the present disclosure are a method of forming a semiconductor device and a method of forming a FinFET device. An embodiment is a method of forming a semiconductor device, the method including forming a first dielectric layer over a substrate, forming a first hardmask layer on the first dielectric layer, and patterning the first hardmask layer to form a first hardmask portion with a first width. The method further includes forming a second dielectric layer on the first dielectric layer and the first hardmask portion, forming a third dielectric layer on the second dielectric layer, and etching the third dielectric layer and a portion of the second dielectric layer to form a first and second spacer on opposite sides of the first hardmask portion.