Abstract: Provided herein are approaches for in-situ plasma cleaning of ion beam optics. In one approach, a system includes a component (e.g., a beam-line component) of an ion implanter processing chamber. The system further includes a power supply for supplying a first voltage and first current to the component during a processing mode and a second voltage and second current to the component during a cleaning mode. The second voltage and current are applied to one or more conductive beam optics of the component, individually, to selectively generate plasma around one or more of the one or more conductive beam optics. The system may further include a flow controller for adjusting an injection rate of an etchant gas supplied to the beam-line component, and a vacuum pump for adjusting pressure of an environment of the beam-line component.

Abstract: Provided herein are approaches for in-situ plasma cleaning of ion beam optics. In one approach, a system includes a component (e.g., a beam-line component) of an ion implanter processing chamber. The system further includes a power supply for supplying a first voltage and first current to the component during a processing mode and a second voltage and second current to the component during a cleaning mode. The second voltage and current are applied to one or more conductive beam optics of the component, individually, to selectively generate plasma around one or more of the one or more conductive beam optics. The system may further include a flow controller for adjusting an injection rate of an etchant gas supplied to the beam-line component, and a vacuum pump for adjusting pressure of an environment of the beam-line component.

Abstract: Provided herein are approaches for in-situ plasma cleaning of ion beam optics. In one approach, a system includes a component (e.g., a beam-line component) of an ion implanter processing chamber. The system further includes a power supply for supplying a first voltage and first current to the component during a processing mode and a second voltage and second current to the component during a cleaning mode. The second voltage and current are applied to one or more conductive beam optics of the component, individually, to selectively generate plasma around one or more of the one or more conductive beam optics. The system may further include a flow controller for adjusting an injection rate of an etchant gas supplied to the beam-line component, and a vacuum pump for adjusting pressure of an environment of the beam-line component.

Abstract: Provided herein are approaches for in-situ plasma cleaning of ion beam optics. In one approach, a system includes a component (e.g., a beam-line component) of an ion implanter processing chamber. The system further includes a power supply for supplying a first voltage and first current to the component during a processing mode and a second voltage and second current to the component during a cleaning mode. The second voltage and current are applied to one or more conductive beam optics of the component, individually, to selectively generate plasma around one or more of the one or more conductive beam optics. The system may further include a flow controller for adjusting an injection rate of an etchant gas supplied to the beam-line component, and a vacuum pump for adjusting pressure of an environment of the beam-line component.

Abstract: Provided herein are approaches for in-situ plasma cleaning of one or more components of an ion implantation system. In one approach, the component may include a beam-line component having one or more conductive beam optics. The system further includes a power supply for supplying a first voltage and first current to the component during a processing mode and a second voltage and second current to the component during a cleaning mode. The second voltage and current may be applied to the conductive beam optics of the component, in parallel, to selectively (e.g., individually) generate plasma around one or more of the one or more conductive beam optics. The system may further include a flow controller for adjusting an injection rate of an etchant gas supplied to the component, and a vacuum pump for adjusting pressure of an environment of the component.

Abstract: A hand control throttle system includes an actuating mechanism and a sensor. The system is mounted to a standard steering wheel for a vehicle, so that a disabled driver can operate the throttle using a single hand (either right or left) while the hand is also holding the steering wheel.

Abstract: Systems and method for automatic multi-recipient electronic notification are disclosed herein. The system can include a memory that can include a content library database and a user profile database. The system can include a first user device and a second user device. The system can include one or several servers. The one or several servers can: identify a content recipient for receipt of the data packet via the first user device and for association with a data packet; identify a follow-up recipient; select the data packet for delivery to the content recipient; deliver the data packet to the content recipient; trigger a timer at the delivery of the data packet; compare the timer to a threshold; automatically generate a prompt when the timer exceeds the threshold; and automatically deliver the prompt to the follow-up recipient via the second user device.

Abstract: Provided herein are approaches for in-situ plasma cleaning of one or more components of an ion implantation system. In one approach, the component may include a beam-line component having a conductive beam optic, the beam optic having a varied geometry configured to generate a concentrated electric field proximate the beam optic. The system further includes a power supply for supplying a first voltage and first current to the component during a processing mode and a second voltage and second current to the component during a cleaning mode. The second voltage and current may be applied to the one or more beam optics, in parallel, to selectively (e.g., individually) generate plasma in an area corresponding to the concentrated electric field. By providing custom-shaped ion beam optics, plasma density is strategically enhanced in areas where surface contamination is most prevalent, thus improving cleaning efficiency and minimizing tool down time.

Abstract: A hand control throttle system includes an actuating mechanism and a sensor. The system is mounted to a standard steering wheel for a vehicle, so that a disabled driver can operate the throttle using a single hand (either right or left) while the hand is also holding the steering wheel.

Abstract: Provided herein are approaches for in-situ plasma cleaning of one or more components of an ion implantation system. In one approach, the component may include a beam-line component having one or more conductive beam optics. The system further includes a power supply for supplying a first voltage and first current to the component during a processing mode and a second voltage and second current to the component during a cleaning mode. The second voltage and current may be applied to the conductive beam optics of the component, in parallel, to selectively (e.g., individually) generate plasma around one or more of the one or more conductive beam optics. The system may further include a flow controller for adjusting an injection rate of an etchant gas supplied to the component, and a vacuum pump for adjusting pressure of an environment of the component.

Abstract: A hand control throttle system includes an actuating mechanism and a sensor. The system is mounted to a standard steering wheel for a vehicle, so that a disabled driver can operate the throttle using a single hand (either right or left) while the hand is also holding the steering wheel.

Abstract: A hand control throttle system includes an actuating mechanism and a sensor. The system is mounted to a standard steering wheel for a vehicle, so that a disabled driver can operate the throttle using a single hand (either right or left) while the hand is also holding the steering wheel.

Abstract: A rotary pawl latch is disclosed that has a lock bar that engages with the pawl when the pawl is latched and that moves toward the center of the pawl to release the pawl for unlatching. This lock bar never completely becomes disengaged from the envelope of the pawl. There are cutouts in the pawl which allow the pawl to rotate as the lock bar is actuated.