Patents by Inventor RYAN E ARCH

RYAN E ARCH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Resistive memory cells and precursors thereof, methods of making the same, and devices including the same
    Patent number: 10897009
    Abstract: Resistive memory cells, precursors thereof, and methods of making resistive memory cells are described. In some embodiments, the resistive memory cells are formed from a resistive memory precursor that includes a switching layer precursor containing a plurality of oxygen vacancies that are present in a controlled distribution therein, optionally without the use of an oxygen exchange layer. In these or other embodiments, the resistive memory precursors described may include a second electrode formed on a switching layer precursor, wherein the second electrode is includes a second electrode material that is conductive but which does not substantially react with oxygen. Devices including resistive memory cells are also described.
    Type: Grant
    Filed: May 17, 2019
    Date of Patent: January 19, 2021
    Assignee: Intel Corporation
    Inventors: Niloy Mukherjee, Ravi Pillarisetty, Prashant Majhi, Uday Shah, Ryan E Arch, Markus Kuhn, Justin S. Brockman, Huiying Liu, Elijah V Karpov, Kaan Oguz, Brian S. Doyle, Robert S. Chau
  • Resistive memory cells and precursors thereof, methods of making the same, and devices including the same
    Patent number: 10516109
    Abstract: Resistive memory cells, precursors thereof, and methods of making resistive memory cells are described. In some embodiments, the resistive memory cells are formed from a resistive memory precursor that includes a switching layer precursor containing a plurality of oxygen vacancies that are present in a controlled distribution therein, optionally without the use of an oxygen exchange layer. In these or other embodiments, the resistive memory precursors described may include a second electrode formed on a switching layer precursor, wherein the second electrode is includes a second electrode material that is conductive but which does not substantially react with oxygen. Devices including resistive memory cells are also described.
    Type: Grant
    Filed: December 24, 2014
    Date of Patent: December 24, 2019
    Assignee: Intel Corporation
    Inventors: Niloy Mukherjee, Ravi Pillarisetty, Prashant Majhi, Uday Shah, Ryan E Arch, Markus Kuhn, Justin S. Brockman, Huiying Liu, Elijah V Karpov, Kaan Oguz, Brian S. Doyle, Robert S. Chau
  • RESISTIVE MEMORY CELLS AND PRECURSORS THEREOF, METHODS OF MAKING THE SAME, AND DEVICES INCLUDING THE SAME
    Publication number: 20190348604
    Abstract: Resistive memory cells, precursors thereof, and methods of making resistive memory cells are described. In some embodiments, the resistive memory cells are formed from a resistive memory precursor that includes a switching layer precursor containing a plurality of oxygen vacancies that are present in a controlled distribution therein, optionally without the use of an oxygen exchange layer. In these or other embodiments, the resistive memory precursors described may include a second electrode formed on a switching layer precursor, wherein the second electrode is includes a second electrode material that is conductive but which does not substantially react with oxygen. Devices including resistive memory cells are also described.
    Type: Application
    Filed: May 17, 2019
    Publication date: November 14, 2019
    Applicant: INTEL CORPORATION
    Inventors: NILOY MUKHERJEE, RAVI PILLARISETTY, PRASHANT MAJHI, UDAY SHAH, RYAN E ARCH, MARKUS KUHN, JUSTIN S. BROCKMAN, HUIYING LIU, ELIJAH V KARPOV, KAAN OGUZ, BRIAN S. DOYLE, ROBERT S. CHAU
  • RESISTIVE MEMORY CELLS AND PRECURSORS THEREOF, METHODS OF MAKING THE SAME, AND DEVICES INCLUDING THE SAME
    Publication number: 20180062077
    Abstract: Resistive memory cells, precursors thereof, and methods of making resistive memory cells are described. In some embodiments, the resistive memory cells are formed from a resistive memory precursor that includes a switching layer precursor containing a plurality of oxygen vacancies that are present in a controlled distribution therein, optionally without the use of an oxygen exchange layer. In these or other embodiments, the resistive memory precursors described may include a second electrode formed on a switching layer precursor, wherein the second electrode is includes a second electrode material that is conductive but which does not substantially react with oxygen. Devices including resistive memory cells are also described.
    Type: Application
    Filed: December 24, 2014
    Publication date: March 1, 2018
    Applicant: Intel Corporation
    Inventors: NILOY MUKHERJEE, RAVI PILLARISETTY, PRASHANT MAJHI, UDAY SHAH, RYAN E ARCH, MARKUS KUHN, JUSTIN S. BROCKMAN, HUIYING LIU, ELIJAH V KARPOV, KAAN OGUZ