Abstract: Provided is a lid assembly including a lid removably coupled to a container, the lid having an opening extending therethrough for allowing liquid to flow into and out of the container and a recessed portion for receiving a storage portion, the recessed portion including one or more attachment devices configured to removably couple the storage portion to the lid when the storage portion is received by the recessed portion, the storage portion having a body defining a cavity, a cover pivotably attached to the body for closing the cavity, and one or more vents extending therethrough such that the cavity is in fluid communication with the atmosphere when the cover is in a closed position.

Abstract: A non-volatile data retention circuit includes a complementary latch configured to generate and store complementary non-volatile spin states corresponding to an input signal when in a write mode, and to concurrently generate a first charge current signal and a second charge current corresponding to the complementary non-volatile spin states when in read mode, and a differential amplifier coupled to the complementary latch and configured to generate an output signal based on the first and second charge current signals.

Abstract: A method of pipelining inference of a neural network, which includes an i-th layer (i being an integer greater than zero) and an (i+1)-th layer, includes processing, for a first input image, first i-th values of the i-th layer to generate first (i+1)-th values for the (i+1)-th layer, processing, for the first input image, the first (i+1)-th values of the (i+1)-th layer to generate output values, and concurrently with processing, for the first image, the (i+1)-th values, processing, for a second input image, second i-th values of the i-th layer to generate second (i+1)-th values.

Abstract: A method and system are provided. The method includes mapping a binary matrix to an undirected graph form, applying a two-way graph partition algorithm to the mapped binary matrix that minimizes edge cuts between partitions in the mapped binary matrix, applying a greedy algorithm recursively to find a set of row or column permutations that maximizes a transfer of non-zeros from sparse blocks to nonsparse blocks, and sparsifying or densifying the binary matrix according to the applied greedy algorithm.

Abstract: A method, system and electronic device for mitigating variance in a two transistor two resistive memory element (2T2R) circuit is provided. The method includes calculating a sum of a number of logical 1's in a column of bitcells in the 2T2R circuit, N, of an input vector, sensing output current values from each current line in the column of bitcells and calculating an inner product, M, of the input vector and the bitcells in the column in the 2T2R circuit based on the sensed output current values.

Abstract: A non-volatile data retention circuit includes a complementary latch configured to generate and store complementary non-volatile spin states corresponding to an input signal when in a write mode, and to concurrently generate a first charge current signal and a second charge current corresponding to the complementary non-volatile spin states when in read mode, and a differential amplifier coupled to the complementary latch and configured to generate an output signal based on the first and second charge current signals.

Abstract: A non-volatile data retention circuit includes a complementary latch configured to generate and store complementary non-volatile spin states corresponding to an input signal when in a write mode, and to concurrently generate a first charge current signal and a second charge current corresponding to the complementary non-volatile spin states when in read mode, and a differential amplifier coupled to the complementary latch and configured to generate an output signal based on the first and second charge current signals.

Abstract: A weight cell, an electronic device and a device are provided. The weight cell includes a first resistive memory element and a second resistive memory element, a select transistor, and a layer of Spin Hall (SH) material disposed between the first resistive memory element and the second resistive memory element, the layer of the SH material including a first contact and a second contact. The first contact of the SH material is connected to a drain of the select transistor and the second contact of the SH material is connected to an external word line.

Abstract: A method and system are provided. The method includes mapping a binary matrix to an undirected graph form, applying a two-way graph partition algorithm to the mapped binary matrix that minimizes edge cuts between partitions in the mapped binary matrix, applying a greedy algorithm recursively to find a set of row or column permutations that maximizes a transfer of non-zeros from sparse blocks to nonsparse blocks, and sparsifying or densifying the binary matrix according to the applied greedy algorithm.

Abstract: A method of pipelining inference of a neural network, which includes an i-th layer (i being an integer greater than zero), an (i+1)-th layer, and an (i+2)-th layer, includes processing a first set of i-th values of the i-th layer to generate (i+1)-th values for the (i+1)-th layer, determining a quantity of the (i+1)-th values as being sufficient for processing, and in response to the determining, processing the (i+1)-th values to generate an output value for the (i+2)-th layer while concurrently processing a second set of i-th values of the i-th layer.

Abstract: A method of pipelining inference of a neural network, which includes an i-th layer (i being an integer greater than zero) and an (i+1)-th layer, includes processing, for a first input image, first i-th values of the i-th layer to generate first (i+1)-th values for the (i+1)-th layer, processing, for the first input image, the first (i+1)-th values of the (i+1)-th layer to generate output values, and concurrently with processing, for the first image, the (i+1)-th values, processing, for a second input image, second i-th values of the i-th layer to generate second (i+1)-th values.

Abstract: A neuromorphic weight cell (NWC) including a resistor ladder including a plurality of resistors connected in series, and a plurality of shunting nonvolatile memory (NVM) elements, each of the shunting NVM elements being coupled in parallel to a corresponding one of the resistors.

Abstract: A weight cell, an electronic device and a device are provided. The weight cell includes a first resistive memory element and a second resistive memory element, a select transistor, and a layer of Spin Hall (SH) material disposed between the first resistive memory element and the second resistive memory element, the layer of the SH material including a first contact and a second contact. The first contact of the SH material is connected to a drain of the select transistor and the second contact of the SH material is connected to an external word line.

Abstract: A method, system and electronic device for mitigating variance in a two transistor two resistive memory element (2T2R) circuit is provided.

Abstract: A neuromorphic weight cell (NWC) including a resistor ladder including a plurality of resistors connected in series, and a plurality of shunting nonvolatile memory (NVM) elements, each of the shunting NVM elements being coupled in parallel to a corresponding one of the resistors.

Abstract: A non-volatile data retention circuit includes a complementary latch configured to generate and store complementary non-volatile spin states corresponding to an input signal when in a write mode, and to concurrently generate a first charge current signal and a second charge current corresponding to the complementary non-volatile spin states when in read mode, and a differential amplifier coupled to the complementary latch and configured to generate an output signal based on the first and second charge current signals.

Abstract: A non-volatile data retention circuit includes a complementary latch configured to generate and store complementary non-volatile spin states corresponding to an input signal when in a write mode, and to concurrently generate a first charge current signal and a second charge current corresponding to the complementary non-volatile spin states when in read mode, and a differential amplifier coupled to the complementary latch and configured to generate an output signal based on the first and second charge current signals.

Abstract: A non-volatile data retention circuit includes a complementary latch configured to generate and store complementary non-volatile spin states corresponding to an input signal when in a write mode, and to concurrently generate a first charge current signal and a second charge current corresponding to the complementary non-volatile spin states when in read mode, and a differential amplifier coupled to the complementary latch and configured to generate an output signal based on the first and second charge current signals.

Abstract: A neuromorphic weight cell (NWC) including a resistor ladder including a plurality of resistors connected in series, and a plurality of shunting nonvolatile memory (NVM) elements, each of the shunting NVM elements being coupled in parallel to a corresponding one of the resistors.

Abstract: A semiconductor device includes a series of metal routing layers and a complementary pair of planar field-effect transistors (FETs) on an upper metal routing layer of the metal routing layers. The upper metal routing layer is M3 or higher. Each of the FETs includes a channel region of a crystalline material. The crystalline material may include one or more transition metal dichalcogenide materials such as MoS2, WS2, WSe2, and/or combinations thereof.